2SD2136 Search Results

3a npn to126 transistor

Abstract: 2SD2136
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SD2136 is designed for power amplification. „ FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE SAT .

2SB1416

Abstract: 2SD2136
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

Contextual Info: Power Transistors 2SB1416 2SB1416 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD2136 •Features • High DC current gain Iife and good linearity • Low collector-emitter saturation voltage (Vc e m )

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD2136 TRANSISTOR NPN TO – 126 FEATURES z High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. z Low Collector-Emitter Saturation Voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit

2SB1416

Abstract: 2SD2136
Contextual Info: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 60 V Collector-emitter voltage (Base open)

2SD2136

Contextual Info: 2SD2136 3A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier Low Collector-Emitter Saturation Voltage VCE sat High Forward Current Transfer Ratio hFE Which has

IC 4090

Abstract: 2SD2136
Contextual Info: 2SD2136 2SD2136 TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃

Contextual Info: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1416 90˚ 10.8±0.2 • Features 4.5±0.2 3.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory

Contextual Info: Power Transistors 2SB1416 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SD2136 • Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory

2SB1416

Abstract: 2SD2136
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl vi an m m es

2SB1416

Abstract: 2SD2136
Contextual Info: Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 90˚ 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SD2136 is designed for power amplification. ̈ FEAT U RES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE SAT .

2SB1416

Abstract: 2SD2136
Contextual Info: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1416 90˚ 10.8±0.2 • Features 4.5±0.2 3.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit

TO 126 FEATURES

Abstract: IC 4090 2SD2136
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD2136 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range

2SD2136

Abstract: IC 4090
Contextual Info: 2SD2136 2SD2136 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃

2SB1416

Abstract: 2SD2136
Contextual Info: Power Transistors 2SB1416 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SD2136 • Features 4.5±0.2 90˚ 3.8±0.2 10.8±0.2 7.5±0.2 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • High forward current transfer ratio hFE which has satisfactory

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 90˚ 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory

Contextual Info: Power T ransistors 2SD213Ó 2SD2136 Silicon NPN Triple-Diffused Planar Type Package Dim ensions Pow er Amplifier Com plem entary Pair with 2SB1416 • Features • H igh DC c u r re n t gain hFE and good lin earity • L ow c o lle c to r-e m itte r sa tu ra tio n v o ltag e

25814

Abstract: 2SB141 2SB1416 2SD2136
Contextual Info: Power Transistors 2SB141Ó 2SB1416 Silicon PNP Epitaxial Planar Type • Package Dim ensions A F Pow er Amplifier Com plem entary Pair with 2SD2136 ■ Features • H igh D C c u r re n t gain Iife and good lin earity • L o w c o lle c to r-e m itte r s a tu ra tio n v o ltag e (VcEtaau)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SD2136 is designed for power application.  FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE SAT .

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open)

2SB1416

Abstract: 2SD2136
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl vi an m m es