2SD164 Search Results

2SD1640

Abstract: hl planar
Contextual Info: Power Transistors 2SD1640 2SD1640 Silicon NP.N Epitaxial Planar Darlington Type Package D im ensions AF O utput A m plifier U n it • m m S0*¡ • Features 5 2+0 2 • Darlington connection • High DC cu rren t gain hn. • High collector cu rren t (Ic)

2SD1641

Contextual Info: Power Transistors 2SD1Ó41 2SD1641 Silicon PN.P Triple-Diffused Planar Type Package D im ensions High DC C urrent Gain hFE , High Power A m plifier TV Power Source O utput • Features • • • • Unit ^ mm 4.7max n 2. lmax. 15.5max 13.5max ll.Omax. PF s *

2SD1647

Abstract: transistor 2sd1647 diode zener 2.5 to 4.0v transistor Y2 Y2 TRANSISTOR
Contextual Info: h 7 > V 7s $ / T ransistors W *» f 2SD1647 ^ j | g ^ ü i l g ^ / L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • • fêfi 1 Z } [ y /7 ^ ¡S U /D im e n s io n s Unit : mm) * a : — x rH ltC 6 0 V (7 )'y x i ~ - £ ' < 1 - K i F*3j®o

Contextual Info: ROHM CO L T D h '7 > y 40E VÖSÖTRT » 0 0 D S ci 2 1 $ / I r a n s is t o r s 1 ¡RHU 2SD1647 ” - T-33-2 ? I # ® j j S a * l i 1 i f f l / L o w Freq. Pow er Amp. Epitaxial Planar NPN Silico n Darlington Transistor

Contextual Info: 2SD1645 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.4k h(FE) Max. Current gain.40k

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1640 Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1640 Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter

Contextual Info: h ~ 7 > y Z 5 t / Tr ansi st or s 2SD1647 2SD1647 NPN y 'J b> ' JI>j£ii:fritlliffl/Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • a S4 SI V 'A 'd l-r • ^ i-J f^ ^ H /D im e n s io n s U n it: mm : — x falic 60 V co " j x 1~

2SD1645

Abstract: I32O
Contextual Info: Power Transistors 2SD1Ó45 2SD1645 Silicon NPN Epitaxial Planar Darlington Type P a c k a g e D im e n s io n s A F A m plifier • F e a tu re s • 60V Z e n e r diode b e tw e e n built-in C and B, C and E • V e ry sm all flu ctu atio n s in b re a k d o w n v o ltag e

2SD1640

Contextual Info: Power Transistors 2SD1640 Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 120

2SD1640

Abstract: 2SD164
Contextual Info: Power Transistors 2SD1640 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 8.0+0.5 –0.1 3.2±0.2 3.05±0.1 3.8±0.3 1.9±0.1 • Darlington connection • High forward current transfer ratio hFE • Large peak collector current ICP

2SD852K

Contextual Info: 2SB852K / 2SA830S 2SD1383K / 2SC1645S Transistors I High-gain Amplifier Transistor —32V, —0.3A 2SB852K / 2SA830S •F e a tu re s 1 ) Darlington connection fo r high DC current gain. 2 ) Built-in 4 k Q resistor between base and emitter. 3 ) Complements the 2SDl383Ki&#39;2SD1645S.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Powor Transistors 2SD1645 Silicon NPN epitaxial planar type darlington For low frequency amplification • Package  Built-in zener diode (60 V) between collector-base and collector-emitter

ic 786

Abstract: 12V1 2SD1643 2SD1643A
Contextual Info: Power Transiste • b^ 35ñ S4 o o i i n s i s d ■ p n c e 2s d i 643, 2s di ó4 3a 2SD1643, 2SD1643A Silicon PNP Triple-Diffused Planar Type Package Dimensions High D C Current Gain h FE , A F Power Amplifier ■ Features U n it : mm S 2m ax. . I5.5max.

ib7a

Abstract: 1B1000 2SD1640
Contextual Info: P o w er T ra n s is to rs 2SD1640 2S D 1640 Silicon NP.N Epitaxial Planar Darlington Type Package D im ensions AF O utput A m plifier Uni L - m m • Features t 2+0 Ì • D a rlin g to n con n e c tio n • H ig h D C c u rre n t gain din- ■ • H igh c o lle c to r c u rre n t Ic)

TRANSISTOR T0220

Abstract: 2SD1646 100v 1a darlington transistor 100 amp npn darlington power transistors
Contextual Info: h 7 > yX $ /I ransistors 2S D 1646 2SD1646 I t 0^ ^ ' > T ^ 7 ° U - ^ N P N Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • 1 x l'jÉ lIj/D im e n s io n s Unit : mm) U > h > i i ^ c T ' h FE 2} 5 ? > / ' $ - $ ' ( * - K rtM o • Features

2SD1640

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1640 Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter

2SA830S

Abstract: 2SB852K 2SD1383K 2SD1645S T146
Contextual Info: 2SB852K / 2SA830S Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K / 2SA830S zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K / 2SD1645S.

TRANSISTOR b1181

Abstract: 2SD1649 SANYO KOGYO JIS B1181 LA78 U5DR sanyo transistor T03-PML
Contextual Info: SANYO SEMICONDUCTOR 1EE D | CORP 7T17Q7t. GQOSIBD •T-S3-U 2SD1649 - NPN Triple Diffused Planar S ilicon Transistor 2039 Color TV Horizontal Deflection Output Applicationsfwith Damper Diode 1755B Applications . High-voltage, power switching Features . Fast speed tfmax=0.4us).

2SB1286

Abstract: 2SD1646
Contextual Info: SavantIC Semiconductor Product Specification 2SB1286 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD1646 ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier and power driver applications

2SC3998

Abstract: 2SD1650 2SD1649 2SD1883 2sd1397 2sc3997 2SD1886 2SD1882 2SC3596
Contextual Info: SA/iYO Color TV Block Dia g r a m 14” -40” ( L i n e O p e r a t e ) ^Horizontal Output With Damper 14" Without Damper Diode Diode (2SD1649) (2SD1882) ©(2SD1876) 16" ~ 18" 2SD1397 (2SD1654) (2SD1650) (2SD1883) ©(2SD1877) 19" ~ 21" 22" ~ 2SD1398

2SD1651

Abstract: 2SD1398 LA7577 2SD1887 2sc3997 2sd1649 2SC3595 2SC3502
Contextual Info: Color TV Block D i a g r a m 14”~ 4 0 ” (Line SAHYO Operate) •^•Horizontal Output VIF, SIF LA7577 2SC2314 2 SAI 011 Without Damper Diode With Damper Diode — 14" 16" ~ (2SD1649) (2SD1876) 18" ©(2SD1882) 2SD1397 (2SD1650) ©(2SD1877) ©(2SD1883)

2SD164

Abstract: 2SD1643 2SD1643A
Contextual Info: P o w er T ra n s is to rs 2SD1Ó43, 2SD1643A 2S D 1643, 2S D 1643A Silicon PNP Triple-Diffused Planar Type H igh D C C u rre n t G a in h F e j P a c k a g e D im e n s io n s A F P o w e r A m p lifie r • F e a tu re s • High DC cu rren t gain (Iife)

2sd164

Contextual Info: ROHM 40E CO LTD D • 7828=^=1 ODOSIlfl 1 EIRHfl 2SD1646 h 7 > y 7 i i / T ransistors - T-33-2 9 NPN 2 S D 1 6 4 8 S > jS t t^ lilliffl/ L o w Freq. Pow er Am p. Epitaxial Planar N PN Silicon Darlington Transistor