2SD1409 Search Results

2SD1409

Contextual Info: Product Specification www.jmnic.com 2SD1409 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain ・Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS ・Igniter applications ・High volitage switching applications

d1409a

Abstract: D1409 2SD1409A 2SD1409A equivalent
Contextual Info: 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor

d1409a

Abstract: 2SD1409A
Contextual Info: 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor

Contextual Info: TO SHIBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS. 2SD1409A 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • • 1.1 M A X IM U M RATINGS (Ta = 25°C) EQUIVALENT CIRCUIT

2SD1409A

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • 03.2 ±0.2 2.7±0.2 High DC Current Gain * = 600 (Min.)

2SD1409

Contextual Info: SavantIC Semiconductor Product Specification 2SD1409 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·DARLINGTON APPLICATIONS ·Igniter applications ·High volitage switching applications PINNING PIN DESCRIPTION 1

D1409A

Abstract: d1409 2SD1409A
Contextual Info: 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor

d1409a

Contextual Info: 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor

Contextual Info: 2SD1409A TOSHIBA TO SHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 • 03.2 ± 0.2 2.7± 0.2 High DC Current Gain * = 600 (Min.)

Contextual Info: 2SD1409A TO SHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 7<;r>iAfiqA INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. 10 + 0.3 • • ç5 3.2± 0 .2 2 .7 1 0 .2 High DC Current Gain : hpg = 600 (Min.) (Vq e = 2V, I q = 2A)

d1409a

Abstract: 2SD1409A
Contextual Info: 2SD1409A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1409A 通 信 工 業 用 ○ 高電圧スイッチング用 単位: mm • 直流電流増幅率が高い。: hFE = 600 (最小) (VCE = 2 V, IC = 2 A) • ベース･エミッタ間に抵抗が内臓されております。

2SD1409A

Contextual Info: 2SD1409A TO SH IBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 • = 600 (Min.) (VCE = 2 V, IC = 2 A) Monolithic Construction with Built-In Base-Emitter Shunt

2SDI80

Abstract: 2sc2238 2SD1431 2SC3303 2SC212Q 2sd1855 2SD1877 2SC3257 2SD1212 2SD1409
Contextual Info: - m £ Type No. 2SD 1442 / fé T 2SÖ 1442A fé T 2SD fé T fé T tt 1443 2SD 1443A 2SD 1444 € M anuf. ✓ m h SANYO 2SD1235 2SD1409 2SC27Q3 2SC3303 2SD471 2SD 1446 ^ fé T 2SD 1447 ~ h m 2SD400 2SD B Ü n 2SDÎ802 2SD1802 a 2SD 1450 ^ 2SD 1451 a 2SD 1452

2sd1409

Contextual Info: SILICON NPN TRIPLE DIFFUSE TYPE DARLINGTON POWER 2SD1409 INDUSTRIAL APPLICATIONS Unit in m m IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. 1Q.3MAX. FEATURES: . H i g h DC Current Gain : h F E = 6 0 0 ( M i n . ) (Vc e =2V, I c = 2A) . Monolithic Construction w i t h Buil t - I n Base-Emitter

d1409a

Abstract: 2SD1409A 100-C3000
Contextual Info: 2SD1409A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1409A 通 信 工 業 用 ○ 高電圧スイッチング用 単位: mm • 直流電流増幅率が高い。: hFE = 600 (最小) (VCE = 2 V, IC = 2 A) • ベース･エミッタ間に抵抗が内臓されております。

2SD1409

Abstract: DARLINGTON 3A 100V npn
Contextual Info: 2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220F PARAMETER

2SD1409

Abstract: transistor 2sd1409
Contextual Info: 2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220F PARAMETER

2SD1409

Abstract: 2sd1409 toshiba
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1409 INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. lQkSUAX. FEATURES: . High DC Current Gain : hFE=600(Min.) (VCE=2V, Ic = 2A) . Monolithic Construction with Built-In Base-Emitter

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SC3560

Abstract: 2SC3625 2SB1020 pnp darlington 2SC3309 2SC3310 2SC3497 2SC3559 2SC3561 2SD1571 2SC3562
Contextual Info: T0220 CÜ> Application * MAX. * t r Type No. NPN SWITCHING REG. PNP •c A 2SC3309 2SC3560 2 2SC3561 2SD1571 3 2SC3559 V CE (sat) M AX, h FE PC Tc=25°C (W) VCE (V) >c (A) (V) 'c (A) 'B (A) Cob TYP. (MHz) VCE (V) 1c (A) f=1MHz <pF) VCB (V) , • SWTime TYP.