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2SD1007
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Kexin
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NPN Silicon Epitaxial Transistor |
Original |
PDF
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49.39KB |
1 |
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2SD1007
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NEC
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Semiconductor Selection Guide 1995 |
Original |
PDF
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3.25MB |
226 |
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2SD1007
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NEC
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Semiconductor Selection Guide |
Original |
PDF
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3MB |
399 |
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2SD1007
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TY Semiconductor
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NPN Silicon Epitaxial Transistor - SOT-89 |
Original |
PDF
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145.83KB |
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2SD1007
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Unknown
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Transistor Substitution Data Book 1993 |
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PDF
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35.01KB |
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2SD1007
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Unknown
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The Japanese Transistor Manual 1981 |
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PDF
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107.03KB |
2 |
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2SD1007
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Unknown
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Transistor Shortform Datasheet & Cross References |
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PDF
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73.8KB |
1 |
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2SD1007
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Unknown
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Shortform Transistor PDF Datasheet |
Short Form |
PDF
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140.45KB |
1 |
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2SD1007
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Unknown
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Japanese Transistor Cross References (2S) |
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PDF
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33.05KB |
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2SD1007
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NEC
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NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
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227.62KB |
4 |
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2SD1007
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NEC
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Silicon Transistor |
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PDF
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227.62KB |
4 |
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2SD1007-T1
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NEC
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Silicon Transistor |
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PDF
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227.62KB |
4 |
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2SD1007-T2
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NEC
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Silicon Transistor |
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PDF
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227.62KB |
4 |
2SD1007
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Shenzhen Heketai Electronics Co Ltd
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NPN silicon epitaxial transistor in SOT-89 package with 120 V collector-emitter voltage, 0.7 A continuous collector current, 2 W power dissipation, and DC current gain ranging from 90 to 400 depending on grade. |
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2SD1007Q
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Shikues Semiconductor
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2SD1007
