2SD0601A Search Results

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0601A (2SD601A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2

Contextual Info: Composite Transistors XN0B301 XN1B301 Silicon PNP epitaxial planar transistor (Tr1) Silicon NPN epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 2 • Basic Part Number of Element 1 (0.65) 0.30+0.10 –0.05 • 2SB0709A (2SB709A) + 2SD0601A (2SD601A)

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: Transistors 2SD0601A 2SD601A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • High foward current transfer ratio hFE

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN05601 XN5601
Contextual Info: Composite Transistors XN05601 XN5601 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 2 1 (0.65) 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SB0709A (2SB709A) + 2SD0601A (2SD601A)

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0601A (2SD601A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d • Features

NP0A501

Abstract: 2SD0601A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A501 Silicon NPN epitaxial planar type For general amplification Unit: mm • Features +0.03 0.12 -0.02 4 2 0.10 3 0.10 1 (0.35) (0.35)  2SD0601A x 2 0 to 0.02 ue

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0601A (2SD601A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Unit Collector-base voltage (Emitter open)

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XP01601 XP1601
Contextual Info: Composite Transistors XP01601 XP1601 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 0.2±0.05 For general amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SB0709A(2SB709A) + 2SD0601A(2SD601A)

2SD0601A

Abstract: 2SD601A XP01501 XP1501
Contextual Info: Composite Transistors XP01501 XP1501 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For general amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD0601A(2SD601A) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element

2SD0601A

Abstract: 2SD601A XN02501 XN2501
Contextual Info: Composite Transistors XN02501 XN2501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD0601A(2SD601A) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

XN06501

Abstract: XN6501 2SD0601A 2SD601A
Contextual Info: Composite Transistors XN06501 XN6501 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SD0601A(2SD601A) x 2 elements 0 to 0.1 ●

5H MARKING

Abstract: 2SD601A XN04501 XN4501 2SD0601A
Contextual Info: Composite Transistors XN04501 XN4501 Silicon NPN epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SD0601A(2SD601A) x 2 elements 0 to 0.1

2SB0709A

Abstract: 2SB709A 2SD0601A 2SD601A XN01601 XN1601 2SD601AI
Contextual Info: Composite Transistors XN01601 XN1601 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element

2SD0601A

Abstract: UNR211S XN04A88
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04A88 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number

2SB0709A

Abstract: 2SD0601A UP04601
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04601 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Features 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package

Contextual Info: Composite Transistors XN0B301 XN1B301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) 2 0.4±0.2 5˚ 2.8+0.2 –0.3 5 1 0.30+0.10 –0.05 (0.65) ● Two elements incorporated into one package. (Tr1 emitter is connected to Tr2 base.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01501 (XP1501) Silicon NPN epitaxial planar type (0.425) For general amplification Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01501 (XN1501) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Two elements incorporated into one package (Emitter-coupled transistors)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN05501 (XN5501) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 0.65±0.15 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN05601 (XN5601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 2 1 (0.65) 3 0.30+0.10

up04601g

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04601G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification • Features  Package  Two elements incorporated into one package (Each transistor is separated)

Contextual Info: Composite Transistors XP0B301 XP1B301 (0.425) Silicon PNP epitaxial planer type (Tr1) Silicon NPN epitaxial planer type (Tr2) 0.20±0.05 For general amplification ● 5° Two elements incorporated into one package. (Tr1 emitter is connected to Tr2 base.)

2SD0601A

Abstract: UP04501
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04501 Silicon NPN epitaxial planar type 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) 1 (0.20) 4 • Features • Two elements incorporated into one package (Each transistor is separated)