2SD 92 M Search Results

2SD867

Abstract: 2SC1815 2SC1959 2SC828A 2sd2023 2sd797 2SD877 2SD917 2SD1488 2SD425
Contextual Info: - 206 - m ¡s Type No. 2SD 75 ^ 2SD 75A 2SD 77 ^ 2SD 77A 2SD 78 < 2SD 79 oon on 2SD 2SD 2SD 2SD 2SD 2SD 81 ^ 82 ^ 83 / 84 — 88 ^ 90 / 2SD 2SD 2SD 2SD 2SD 2SD 91 92 / 93 / 94 96 100 2SD 100A 2SD 101 / 2 SD 102 2SD 2SD 2SD 2SD 2SD 103 * 104 / 105 / 107 , 108

2SD91

Abstract: 2Sd92 2SD90 2SD93 2SD94 2SD943 TI 25
Contextual Info: 2SD90, 2SD91, 2SD92, 2SD93, 2SD94 Oafi&Üffl O Î t Æ Ü Î f X Ü f f l n ap « H B Î i i # f ô : mm E I A J (T C -9 , T B -1 2 ) • (Ta = 25°C) « 3 U 7 H ? • 3 U 7 ? le XÜŒ • X ; / ^Ü EE i -y 7 * ^ — Z-Wl±. X 3 ^ 71t8Ê 2SD 90 2SD91 2SD 92 2SD 93 2SD 94

2SB73

Abstract: 2SB739 2SB738 2SB73R 2SD787 2SD788
Contextual Info: HITACHI 2SB738, 2SB739 S IL IC O N P N P E P IT A X IA L L O W F R E Q U E N C Y P O W E R A M P L IF IE R Complementary pair with 2SD 787 and 2SD 788 3CJ 1. E m illrr 2. C ollecior 3. Base DimcrtsiOrtS ìli m m (JE D E C TO-92 MOD.) I ABSO LU T E MAXIMUM RATINGS (Ta=25°C)

2SB561

Abstract: 2SB56J 2SD467
Contextual Info: HITACHI 2SB561-SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Com plem entary pair with 2SD 467 SS o *—n. . .-1- 1 . ^ « F. JE D E C TO-92 • ABSO LU T E MAXIMUM RATINGS <Ta=25*C) Item Symbol MAXIMUM COLLECTOR DISSIPATION CURVE Unit 2SB561

tiac

Abstract: 2SD1922
Contextual Info: HITACHI 2SD 1922— — SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER 3 5 Mj * ^ 13.1 Mf T 2 3 Mat =P h-!1 1 ' :fe z H . E m iiw r ?. C o llcctcr 3. Rive Ûinxnsîoos à mm} >> >> O O ÛO . (JEDEC TO-92 MOO.) I ASSOLUTE MAXIMUM RATINGS (Ta=25"C) Item

2SB781

Abstract: 2SC15-0 138D 2SD1000 2SD1001 2SD814 2SD968 2SD970 2SD997 2SD999
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

s1854

Abstract: toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A
Contextual Info: — wtmmmmmmmm TOSHIBA 9. Power Supply Systems 9-1 4 0 0 ~ 5 0 0 V Switching Transistors ^ ^ \P a c k a g e lC A ^ 2 5 \ T 0 -2 2 0 A B TO -2 20 IS T O -3 P II] TO-3P (N) TO-3P (L i - 2SC2552 2SC3560/1 # 2 S K 5 2 7 /8 # - - 2SC2553 S 3529A # 2 S K 5 3 0 /1 #

sd1555

Abstract: s2055af 4 s2055af S2055 2SD142 2SD871 2sd820
Contextual Info: TOSHIBA 6 D eflection System 6-1 D eflection System * : U nd er developm ent 6-2 V ertical Deflection O u tp u t T ransistors '^ ^ -v ^ ^ P a ck ag e Characteristics V C E O = 160 V l c = 1A V c e o = 150 V *c* 1-5A TO -1 2 6 TO -2 0 2 2 SC 2 3 83 2SA1Q 13

2SC5858

Abstract: transistor c5858 c5858 2sc5570 C5446 S2055n 2sc 5587 2SC5588 2SC5587 2SC5859
Contextual Info: 1 Horizontal – Deflection – Output Power Transistors February 2005 TOSHIBA CORPORATION Semiconductor Company Discrete Semiconductor Division Transistors DP0540034_01 2 High Voltage TR for TV / Monitor 1. Progressive/ High Vision/Digital TV Part Number

C3182N

Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn

3182N

Abstract: 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B
Contextual Info: • TO BE DISCONTINUED T Y P E L IS T 1 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. 0 4 A Z 2 .0 —3.6 0 2 C Z 2 .0 -3 .6 2SC 512 2SC 3421 2SC 2754 - 0 5 A Z 2 .2 - 3 .6

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2SC166

Abstract: 2N1103 2N2426 2n826 2SA210 2SC167 2SC5220 2SD100 2n1585 transistor t05
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2SB737

Abstract: 2SD786 2SD786S 89ji 2Sd786 rohm 2SB737 rohm
Contextual Info: ROHM CO LTD h7 ~ 4QE D 7 a a a ci c ':i o o o s a i a a / T ransistors 2SD786/2SD786S ' 2SD786 2SD786S m rh h 7 ^ 2 7 -0 °) V lJ - 1> K7 > V ^ iW Low Noise Amp. Epitaxial Planar NPN Silicon Transistors 1W ff^ > £ IS l/D im e n s io n s U n it: mm) m r a t' is tttm o

2SD128 transistor

Abstract: 2N2222B MDS38 2n1585 2N2426 2SC18H 2SC34 2SD31 SFT184 GT1608
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: .188 *.030 c 1 MOUNTING BRACKET AND 2X 10-32 UNF X .250 PAN HEAD SCREW FURNISHED UNASSEMBLED 0 (.750) X (.312) WIDE ROLLER MADE OF NON-SPARKING WEAR RESISTANT MATERIAL a: < I x •ROLLER LEVER MAY BE POSITIVELY LOCKED AT INTERVALS OF APPROX 0.2° (1980 POSITIONS)

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

1401-1407

Abstract: 2N1423 MT1836 2SC1005 2N5577 2N5579 MD38 MT49 STC3741 2sc999
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t - k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

NKT 275 transistor

Abstract: 2sc5250 transistor 2N5577 2N5579 MD38 S2000 2SD223 1401-0405
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

2N1423

Abstract: 2N5577 2N5579 MD38 1401-0207 MT1836 2SD223
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

78m5

Abstract: mt59 PT2622
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

2SC114 transistor

Abstract: transistor 2SC114 2SC107 PT2622 2SC114 usaf517es060m 2SC688 usaf516es048m usaf516es047m BLY87
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

2N5017

Abstract: 2SD2350 CP405 1711-1602 2SD234r 2SD235Y BD116 bo113 description BD145 T062
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T