2SC593 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5939G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Features ■ Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb

C5931

Abstract: 2SC5931 C5931 Transistor Horizontal monitor EHT
Contextual Info: Power Transistors 2SC5931 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm 23.4 (4.5) (2.0) (1.2) 26.5±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • High speed switching: tf < 200 ns • Wide safe operation area

Contextual Info: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.3 µs (max) (IC = 0.3 A)

2-7D101A

Abstract: 2SC5930
Contextual Info: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • Unit: mm High-speed switching: tf = 0.3 s (max) (IC = 0.3 A)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C

2SC5938A

Abstract: RT3C99M
Contextual Info: RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3C99M is a composite transistor built with two 2.1 2SC5938A chips in SC-88 package. ① ⑥ 0.65 ② ⑤ 0.65 FEATURE ③ ④ Silicon NPN epitaxial type

2SC5939

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm M Di ain sc te on na tin nc ue e/ d 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02

2SC5935

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 Parameter Symbol

IC 74173

Abstract: 2SC5933 74171
Contextual Info: Ordering number : ENN7417 2SC5933 NPN Triple Diffused Planar Silicon Transistor 2SC5933 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).

2SC5935

Contextual Info: Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open

IC 74173

Abstract: 74171 N2503 2SC5933 N7417
Contextual Info: 注文コード No. N 7 4 1 7 2SC5933 No. N7417 N2503 新 NPN 三重拡散プレーナ形シリコントランジスタ 2SC5933 特長 超高精細度 CRT ディスプレイ 水平偏向出力用 ・高速度である。 ・高耐圧である （VCBO=1600V）

Contextual Info: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.3 µs (max) (IC = 0.3 A)

2SC5938

Abstract: RT3C55M
Contextual Info: b RT3C55M Composite Transistor For Muting Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3C55M is compound transistor built with two 2SC5938 chips in SC-88 package. FEATURE Silicon NPN epitaxial type Each transistor elements are independent.

2SC5938

Abstract: LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5938 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit: : mm ISAHAYA 2SC5938 is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C

Contextual Info: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.3 µs (max) (IC = 0.3 A)

2SC5934

Abstract: 2SA2117
Contextual Info: Ordering number : ENN7906 2SA2117 / 2SC5934 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA2117 / 2SC5934 High Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • •

IC 74164

Abstract: ic 74163 IC 74161 2SC5932
Contextual Info: Ordering number : ENN7416 2SC5932 NPN Triple Diffused Planar Silicon Transistor 2SC5932 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).

2SC5939

Contextual Info: Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 2 0.15 min. 1 0.23+0.05 –0.02 0.15 min. 5˚ 0.80±0.05 1.20±0.05 3 • High transition frequency fT

2SA2117

Abstract: 2SC5934
Contextual Info: Ordering number : ENN7906 2SA2117 / 2SC5934 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2117 / 2SC5934 High Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2

2SC5930

Abstract: 2-7D101A C5930
Contextual Info: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.3 µs (max) (IC = 0.3 A)

ic 74163

Abstract: IC 74164 IC 74161 IC 7416 2SC5932 2SC593
Contextual Info: Ordering number : ENN7416 2SC5932 NPN Triple Diffused Planar Silicon Transistor 2SC5932 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02