2SC584 Search Results

a888 513

Contextual Info: 2SC5849 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0759-0100 Previous ADE-208-1469 Rev.1.00 Aug.10.2005 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1. Emitter

2SC5849

Abstract: DSA003640 operation of ic 741
Contextual Info: 2SC5849 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1469 Z Rev. 0 Nov. 2001 Features • Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 Note: Marking is “WY–“. 1. Emitter 2. Base 3. Collector 2SC5849 Absolute Maximum Ratings

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5848 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2079 Unit: mm 3 2 Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2078G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5846G • Features ■ Package • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2078 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5846 Unit: mm 0.33+0.05 –0.02 0.10+0.05 –0.02 5˚ • High forward current transfer ratio hFE

transistor c 5936

Abstract: 2SC5847 IC 4435 D2502 7803 3V IT04914 8767 transistor marking 4934
Contextual Info: Ordering number : ENN7328 2SC5847 NPN Epitaxial Planar Silicon Transistor 2SC5847 High-Frequency Low-Noise Amplifier and OSC Applications • • • Package Dimensions Low noise : NF=1.5dB typ f=2GHz . unit : mm High cutoff frequency : fT=6.0GHz typ (VCE=1V). 2106A

2SC5845

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5845 Silicon NPN epitaxial planar type For general amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 1.9±0.1 Collector current Peak collector current

2SA2079

Abstract: 2SC5848
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5848 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2079 Unit: mm 3 2 M Di ain sc te on na tin nc ue e/ d  High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2078G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SC5846G • Package • High forward current transfer ratio hFE

2SA2079

Abstract: 2SC5848
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5848 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2079 Unit: mm 3 2 0.60±0.05  High forward current transfer ratio hFE  Suitable for high-density mounting and douwsizing of the equipment for

702 Z TRANSISTOR smd

Abstract: 702 Z smd TRANSISTOR 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE 702 transistor smd marking KA 2sc5872 FR MARKING SMD TRANSISTOR 702 H transistor smd MARKING SMD IC CODE TRANSISTOR SMD MARKING CODE A1
Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor

2SA2077

Abstract: 2SC5845
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2077 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5845 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)

2SC5848

Abstract: 2SA2079
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5848 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2079 Unit: mm 3 2 0.60±0.05  High forward current transfer ratio hFE  Suitable for high-density mounting and douwsizing of the equipment for

2SA2078

Abstract: 2SC5846
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2078 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5846 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 1 0.23+0.05

2SC5846G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846G Silicon NPN epitaxial planar type For general amplification • Package • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the

transistor c 5936

Abstract: IC 4435 transistor marking 4934 IC 7487 2SC5847 D2502 a 2400 0233
Contextual Info: Ordering number : ENN7328 2SC5847 NPN Epitaxial Planar Silicon Transistor 2SC5847 High-Frequency Low-Noise Amplifier and OSC Applications • • • Package Dimensions Low noise : NF=1.5dB typ f=2GHz . unit : mm High cutoff frequency : fT=6.0GHz typ (VCE=1V). 2106A

2SA20

Abstract: 2SA2077 2SC5845
Contextual Info: Transistors 2SA2077 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5845 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 0.95 (0.95) 1.9±0.1 (0.65) • High forward current transfer ratio hFE

C5841

Abstract: 2SC5841
Contextual Info: Power Transistors 2SC5841 Silicon NPN epitaxial planar type Unit: mm 10.0±0.2 2.5±0.1 13.0±0.2 • Features 5.0±0.1 1.2±0.1 C 1.0 1.48±0.2 18.0±0.5 Solder Dip • High-speed switching tstg: storage time/tf: fall time is short • Low collector-emitter saturation voltage VCE(sat)

2SA2079

Abstract: 2SC5848 2SA20
Contextual Info: Transistors 2SC5848 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2079 Unit: mm 3 2 0.60±0.05  High forward current transfer ratio hFE  Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package

Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor

702 TRANSISTOR smd

Abstract: transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC
Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor

transistor dc 558 npn

Abstract: 2SC5843
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5843 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2079 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5848 Unit: mm • Features 3 2 0.60±0.05  High forward current transfer ratio hFE  Suitable for high-density mounting and douwsizing of the equipment for