2SC5839 Search Results

Contextual Info: Transistors 2SC5839 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm • Features 3 1 0.60±0.05 M Di ain sc te on na tin nc ue e/ d 2 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Symbol Rating Unit Collector-base voltage Emitter open

2sc583

Abstract: 2SC5839
Contextual Info: Transistors 2SC5839 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm 3 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open)

Contextual Info: Transistors 2SC5839 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm 3 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and