2SC581 Search Results

2SC5819

Contextual Info: 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)

2SC5810

Contextual Info: 2SC5810 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5810 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.17 V (最大)

Contextual Info: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)

Contextual Info: 2SC5819 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)

2SC5810

Contextual Info: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)

2SC5810

Contextual Info: 2SC5810 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5810 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.17 V (最大)

Contextual Info: 2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0757-0100 Previous ADE-208-1468 Rev.1.00 Aug.10.2005 Application • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

Contextual Info: 2SC5810 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5810 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.17 V (最大)

2SC5812

Abstract: DSA003640 ADE-208-1468
Contextual Info: 2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1468 Z Rev.0 Nov. 2001 Features • High power gain, Low noise figure at low power operation: 2 |S21| = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK 3 1 2 Note: Marking is “WG–“.

2SC5819

Contextual Info: 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)

2SC5810

Contextual Info: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)

2SC5819

Contextual Info: 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A · Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)

2SC5810

Contextual Info: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)

5H MARKING

Abstract: 2SC5813
Contextual Info: Transistors 2SC5813 Silicon NPN epitaxial planar type Unit: mm For DC-DC converter 0.40+0.10 –0.05 0.95 (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.65) • Low collector to emitter saturation voltage VCE(sat)

Contextual Info: 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)

2SC5813

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5813 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 (0.95) (0.95) 1.9±0.1 Collector current

ADE 352

Abstract: 2SC5812 2SC5812WG-TR-E PUSF0003ZA-A SC-89
Contextual Info: 2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0757-0100 Previous ADE-208-1468 Rev.1.00 Aug.10.2005 Application • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

Contextual Info: Reliability Tests Report Product Name: 2SC5810 Package Name: PW-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SC5817

Abstract: 2SC5814 2SC5815 2SC5816 MARKING EE
Contextual Info: 〈Transistor〉 DEVELOPING 2SC5814，2SC5815，2SC5816，2SC5817 For Low Frequency Amplify Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：ｍｍ 2SC5814 2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency

2SC5813

Contextual Info: Transistors 2SC5813 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low collector-emitter saturation voltage VCE sat • Mini type package, allowing downsizing of the equipment and

Contextual Info: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)

2SC5819

Contextual Info: 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)

2SC5810

Contextual Info: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.1 A · Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)

2SC5810

Contextual Info: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)