2SC5358 SPECIFICATION Search Results
2SC5358 SPECIFICATION Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| HM1L52LDP242H2PLF | Amphenol Communications Solutions | Right Angle Signal Header, 60 Position Press-Fit, Specific Loading | |||
| HM1L52LDP242H6PLF | Amphenol Communications Solutions | Right Angle Signal Header, 60 Position Press-Fit, Specific Loading | |||
| SM28VLT32SKGD1 | Texas Instruments | 32-Mbit High-Temp Flash ASIC With Serial Peripheral Interface (SPI) Bus 0-XCEPT |
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| CDC341DWR | Texas Instruments | 1-to-8 clock driver with tight AC specification 20-SOIC 0 to 70 |
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| CDC341DW | Texas Instruments | 1-to-8 clock driver with tight AC specification 20-SOIC 0 to 70 |
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2SC5358 SPECIFICATION Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SA1986
Abstract: 2SC5358
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OCR Scan |
2sc53582sa1986 | |
C5358
Abstract: 2SC5358 2SA1986 2SC535
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2sc53582sa1986c53582sc535 | |
2SA1986
Abstract: 2SC5358
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OCR Scan |
2sc53582sa1986i--2--31 | |
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Contextual Info: TO SH IBA 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C |
OCR Scan |
2sc53582sa1986 | |
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Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C |
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2sc53582sa1986 | |
C5358
Abstract: 2SA1986 2SC5358
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Original |
2sc53582sa1986c5358 | |
C5358Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C |
Original |
2sc53582sa19862-16c1ac5358 | |
C5358Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C |
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2sc53582sa19862-16c1ac5358 | |
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Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C |
Original |
2sc53582sa1986 | |
2SC5358
Abstract: 2SC5358 TRANSISTOR SPECIFICATION 2SA1986 80W TRANSISTOR AUDIO AMPLIFIER
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2sa1986-230v2sc53582sc5358 transistor specification+1 | |
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Contextual Info: T O SH IB A 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 M A X^ . • • 0 3 .2 ± 0 .2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C |
OCR Scan |
2sc53582sa19862-16c1a | |
2SA1986
Abstract: 2SC5358 EMIC
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2sa19862sc5358emic | |
2SA1986
Abstract: 2sa198 2SC5358
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2sa19862sc5358-230v2sa198 | |
2SA1986
Abstract: 2SC5358
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2sc53582sa1986 | |
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2sc5358
Abstract: 2SA1986
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2sc53582sa1986 | |
2sc5358 specification
Abstract: 2SA1986 2SC5358
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Original |
2sc53582sa19862sc5358 specification | |
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Contextual Info: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage |
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2sa19862sc5358 | |
A1986
Abstract: 2SA1986 2SC5358
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2sa19862sc5358a1986 | |
A1986
Abstract: 2SA1986 2SC5358
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Original |
2sa19862sc5358a1986 | |
A1986Contextual Info: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage |
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2sa19862sc53582-16c1aa1986 | |
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Contextual Info: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage |
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2sa19862sc53582-16c1a | |
2SA1986
Abstract: 2SC5358
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OCR Scan |
2sa19862sc5358 | |
ta 80wContextual Info: TOSHIBA 2SA1986 2 SA 1 9 8 6 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.9 MAX. • Com plem entary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier 03.2 ±0.2 Output St£lg6. 2.0±0.3 |
OCR Scan |
2sa19862sc5358ta 80w | |
2SC5358
Abstract: 2SA1986
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OCR Scan |
2sa19862sc5358 | |