2SC511 Search Results

Contextual Info: 2SC5110 TOSHIBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 10 Unit in mm 2.1 ± 0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

2SC5111

Contextual Info: 2SC5111 TOSHIBA 2 S C 5 1 11 T O S H IB A TRA N SIST O R FOR VCO A PPLIC A TIO N SILICON NPN EPIT A X IA L PLA N A R TYPE Unit in mm M A X IM U M RATING S Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current

2SC5111FT

Contextual Info: 2SC5111FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111FT For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

2SC5111

Contextual Info: 2SC5111 TO SH IBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

2SC5111

Contextual Info: 2SC5111 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5111 単位: mm ○ VHF~UHF 発振用 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ ･ ベ ー ス 間 電 圧 VCBO 20 V コ レ ク タ ･ エ ミ ッ タ 間 電 圧

2SC5111

Contextual Info: 2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

S21C HF

Abstract: s21c Z804
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC5110 U n it in mm FOR V C O A PPLIC A T IO N M A X IM U M R A T IN G S Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Em itter V oltage E m itter-B ase V oltage Collector C urrent Base C urrent

Contextual Info: 2SC5111 FT TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 FT FOR VCO APPLICATION U n it in mm 1.2 ± 0 .0 5 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current

2SC5111

Contextual Info: 2SC5111 TOSHIBA 2 S C 5 1 11 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm r0.8 .0.1-i ± M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current

2SC5111F

Contextual Info: 2SC5111F TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5111F Unit in mm FOR VCO APPLICATION 1.6 ± 0.1 0.85 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: 2SC5111 TOSHIBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 Unit in mm r0.8 ,0.1-i ± MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

2SC5111

Contextual Info: 2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO

Contextual Info: 2SC5116 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)550 V(BR)CBO (V) I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.50

Contextual Info: TOSHIBA 2SC5110 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 1 <;r s 1 1 n WÊF wmr • ■ FOR VCO APPLICATION U n it in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current

sp 0631

Abstract: TE 2556
Contextual Info: 2SC5111 TOSHIBA nrsm TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE wêêêf FOR VCO APPLICATION a r • ■ ■ U n it in mm 1.6 ±0.2 .0810.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: T O SH IB A 2SC5110 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 10 Unit in mm 2.1 ± 0.1 1.25 ± 0 .1 | MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage

2SC5110

Contextual Info: 2SC5110 TOSHIBA 2 S C 5 1 10 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Power Dissipation

Contextual Info: 2SC5111F TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ? s r R 111 F FOR VCO APPLICATION MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

IC 1298

Abstract: marking 603 npn transistor
Contextual Info: 2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO

Contextual Info: 2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

Contextual Info: TO SHIBA 2SC5110 TOSHIBA TRANSISTOR 2 S SILICON NPN EPITAXIAL PLANAR TYPE C 5 1 1 Unit in mm FOR VCO APPLICATION 2.1 ± 0.1 M A X IM U M R A T IN G S Ta = ? S °C l CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current

Contextual Info: 2SC5111 T O SH IB A TOSHIBA TRANSISTOR 2 SILICON NPN EPITAXIAL PLANAR TYPE S C 5 1 11 Unit in mm FOR VCO APPLICATION M A X I M U M RATINGS Ta = ?S°Cl CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

2SC5113

Abstract: 2SC1740SR
Contextual Info: Transistors High Voltage Switching Transistor Power supply 2SC5113 •F e a tu re s ►External dimensions (Units: mm) 1) High-speed switching. tstg ti = 0.8 pcs (Typ.) (le = 2.5A) ,+0.3 ~£1 ,+ 0 .3 3 - 0.1 = 0.08 ¡x s (Typ.) (le = 2.5A) ¿ 3 .2 ± 0 .?

2SC5110

Contextual Info: 2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage