2SC453 Search Results

cd 1191 cb

Abstract: 2SC4532
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC4532 TV H O R I Z O N T A L D E F L E C T I O N OUT P U T APPLICA TIO NS. Unit in m m H O R I Z O N T A L D E F L ECT ION OU TP U T FOR HIGH R ESO L U T I O N DISPLAY. H IG H S P E E D S W I T C H I N G APPLIC ATI ONS .

2SC4533

Contextual Info: JMnic Product Specification 2SC4533 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High speed switching ・High VCBO ・Wide area of safe operation APPLICATIONS ・For high breakdown voltate ,high-speed switching applications PINNING

Contextual Info: SILICON NPN EPITAXIAL TYPE P OWE R A M P L I F I E R 2SC4539 APPLICATIONS P O WE R S W I T C H I N G A P P L I C A T I O N S Low Saturation Voltage : V C E s a t = 0 .5 V ( M a x .) (Ic =700mA) High Speed Switching Time: t stg=0.3ns Small Flat Package

2SC4531

Contextual Info: Product Specification www.jmnic.com 2SC4531 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P H IS package ・High speed ・High voltage ・Low saturation voltage ・Bult-in damper type APPLICATIONS ・Horizontal deflection output applications PINNING

2SC4531

Contextual Info: SavantIC Semiconductor Product Specification 2SC4531 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High voltage,high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output applications PINNING

Contextual Info: Power Transistors 2SC4533 2SC4533 Silicon NPN Triple-Diffused Planar Type • Package Dimensions High Breakdown Voltage, High Speed Switching U n it ! mm ■ Features • H igh s p e e d sw itch in g • H igh c o lle c to r-b a s e v o lta g e V cbo • W ide a re a of s a fe ty o p e ra tio n (ASO)

4t marking

Abstract: 2SA1734 2SC4539 marking TB
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SC4539 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC4539 Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (1(2 = 700mA) High Speed Switching Time : tgtg = 0.3;i*s (Typ.)

Contextual Info: 2SC4537 Silicon NPN Epitaxial REJ03G0727-0300 Previous ADE-208-1110A Rev.3.00 Aug.10.2005 Application UHF / VHF wide band amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 Note: Marking is “IS–”.

2SC4537

Contextual Info: 2SC4537 Silicon NPN Epitaxial UHF/VHF Wide Band Amplifier Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit ——————————————————————– Collector to base voltage VCBO 15 V ——————————————————————–

IC 7482

Abstract: 2SC4536 nec RF package SOT89
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4536 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC4536 is designed for use in middle power, low distortion low Unit: mm noise figure RF amplifier. It features excellent linearity and large dynamic

2SK528

Abstract: 2SC4531 Ba698
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC4531 HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. . High Voltage U n i t in m m : VCBOS1500V 1 5 .5 ± 0.5 0 3 - 6 ± 0.3 . H i g h S p e e d S w i t c h i n g R e s i s t i v e Load . Collector Metal 3 .0 ± 0 .3

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4536 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2 S C 4 5 3 6 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic

2SC4535

Abstract: RCP 400 F
Contextual Info: Power Transistors 2SC4535 2SC4535 Preliminary Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Pow er Switching Unit - mm 5 2max. • Features "Í-3.2 6.9min. h-»1 o -fr • High speed switching T wo O <M +1 Ö Absolute Maximum Ratings (Tc= 25° C)

Contextual Info: 2SC4537 Silicon NPN Epitaxial HITACHI Application UHF / VHF wide band amplifier Outline CMPAK 2 1. Emitter 2. Base 3. Collector 613 2SC4537 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VcBO 15 V Collector to emitter voltage

Contextual Info: 2SC4539 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4539 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) • High speed switching time: tstg = 0.3 µs (typ.)

2SA1734

Abstract: 2SC4539
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SC4539 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC4539 Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (1(2 = 700mA) High Speed Switching Time : tgtg = 0.3;i*s (Typ.)

2SC4537

Abstract: DSA003723 Hitachi DSA003723
Contextual Info: 2SC4537 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4537 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage

2SC4538R

Contextual Info: 2SC4538R FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frewuency inverters

Contextual Info: 2SC4538R FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frewuency inverters

2SC4532

Contextual Info: 2SC4532 SILICON NPN TRIPLE DIFFUSED MESA TYPE TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. 20.5 MAX HIGH SPEED SWITCHING APPLICATIONS. . High Voltage J# 3.3 ±0.2 : VcBO — 1700V . Fast Switching Speed. Resistive Load tf=0. l(Js(Typ.)

2SC4533

Contextual Info: Inchange Semiconductor Product Specification 2SC4533 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High speed switching ・High VCBO ・Wide area of safe operation APPLICATIONS ・For high breakdown voltate ,high-speed switching applications

QS 100 NPN Transistor

Abstract: NPN transistor mhz s-parameter transistor w 431 IC 431 2SC4536 IC 7482 534-1 MAG RF Transistor s-parameter 638 transistor transistor rf
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4536 DESCRIPTION •Low Noise NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz ·Low Distortion IM2 = 57.5 dB TYP. @VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA

NEC 2501

Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features

Contextual Info: 2SC4538 X ± ' < t7 - y ? > ì > x 9 TRIPLE DIFFUSED PLANER TYPE IM P N = M ÿ £ » y u — j- M HIGH VOLTAGE, HIGH SPEED SWITCHING Features • IW E , High voltage, high speed switching High reliability : Applications '?•>?I*#3.1s—£ • Switching regulators