| 2SC4228 |
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NEC
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Semiconductor Selection Guide 1995 |
Original |
PDF
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3.25MB |
226 |
| 2SC4228 |
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NEC
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HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
Original |
PDF
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52.15KB |
8 |
| 2SC4228 |
|
NEC
|
Semiconductor Selection Guide |
Original |
PDF
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3MB |
399 |
| 2SC4228 |
|
Unknown
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The Transistor Manual (Japanese) 1993 |
Scan |
PDF
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105.98KB |
2 |
| 2SC4228 |
|
Unknown
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High Frequency Device Data Book (Japanese) |
Scan |
PDF
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42.08KB |
1 |
| 2SC4228 |
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Unknown
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Shortform Data and Cross References (Misc Datasheets) |
Short Form |
PDF
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48.17KB |
1 |
| 2SC4228 |
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Unknown
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Japanese Transistor Cross References (2S) |
Scan |
PDF
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35.73KB |
1 |
| 2SC4228 |
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NEC
|
Super Minihold Transistors |
Scan |
PDF
|
133.14KB |
2 |
| 2SC4228-A |
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CEL
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-323 |
Original |
PDF
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1.23MB |
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| 2SC4228M-T1 |
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NEC
|
Silicon Transistor |
Original |
PDF
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52.14KB |
8 |
| 2SC4228R43-T1 |
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NEC
|
NPN Epitaxial Silicon RF Transistor for High-frequency Low-Noise Amplification 3-Pin Super Minimold |
Original |
PDF
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100.05KB |
7 |
| 2SC4228R44-T1 |
|
NEC
|
NPN Epitaxial Silicon RF Transistor for High-frequency Low-Noise Amplification 3-Pin Super Minimold |
Original |
PDF
|
100.05KB |
7 |
| 2SC4228R45 |
|
NEC
|
NPN Epitaxial Silicon RF Transistor for High-frequency Low-Noise Amplification 3-Pin Super Minimold |
Original |
PDF
|
100.05KB |
7 |
| 2SC4228R45-T1 |
|
NEC
|
NPN Epitaxial Silicon RF Transistor for High-frequency Low-Noise Amplification 3-Pin Super Minimold |
Original |
PDF
|
100.05KB |
7 |
|
|
| 2SC4228-T1 |
|
NEC
|
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
Original |
PDF
|
52.15KB |
8 |
| 2SC4228-T1-A |
|
CEL
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-323 |
Original |
PDF
|
1.23MB |
|
| 2SC4228-T2 |
|
NEC
|
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
Original |
PDF
|
52.15KB |
8 |
| 2SC4228 R45 |
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SLKOR
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高频低噪声晶体管NPN，SOT-323封装，高增益5.5dB，低噪声2.0dB，增益带宽乘积8GHz，VCE=3V，IC=5mA，f=2GHz。极限参数：VCBO 20V，VCEO 10V，VEBO 1.5V，IC 35mA，PC 150mW，Tj 150°C，Tstg -65~+150°C。 |
Original |
PDF
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