2SC3617 Search Results

2SC361

Abstract: 2SC3617
Contextual Info: — S • S /— h ' > > ; = ] > S ilic o h = 7 > n T r a 7 n , s i s t o 9 r 2SC3617 2SC 3617l i '7" 'i ' > 9' X 9 T ' # i S K 7 -1" # îiffihpE 1- y K IC ffl/J "/ ^ ÏÏ^ H l ìp -iì • m m f t S T 't o i l l $ o ï Ô ~ Z Ï i w j '- '^ o O h p E ^ j^

Contextual Info: 2SC3617 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)300m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.800 h(FE) Max. Current gain.3.2k

VEBO-15V

Abstract: marking tm 2SC3617 hFE CLASSIFICATION Marking
Contextual Info: Transistors SMD Type NPN Silicon Epitaxia 2SC3617 Features World standard miniature package. High hFE hFE=800 to 1600. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage

2sc984

Abstract: BLX91 trw rf BLX91A sk3264 B0150 ST8001
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, 2SC3617 2SC3617 2N3500 2.N3501 MM2259 MM2260 2SC3954 2SC2053 2SC3599C 2SC35990 ~~g~~~~~ 15 20 2SC3951 2SC3596C 2SC359G0 2SC3596E 2SC3596F LT1739 2SC1365 2SC1252 ~~g~~~~ 25 30 2SC1251 BLW89 BLW89

2-4F1C

Abstract: 2SC3595 2SC3596 2SC3597 2SC3600 2SC3602 2SC3603 2SC3590 2SC3591 2SC3598
Contextual Info: - 164 - T a = 2 5 eC , * E P ( i T c = 2 5 cC m s 1± « £ Vc b o VcEO (V) (V) IC(DC) (A) Pc (W) m n Pc* ICBO m U i ) U ^ r, ft f t 14 hF E [*01(itypfiS] (may1) !<~/1r Vc e (V) (V) ( T a = 2 5 ?C ) (V)' ' W *(V)" Ic (A) Ib (A) C R T Hout 330 150 7 50

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

NEC 10F triac

Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
Contextual Info: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2

2sd2396

Abstract: 2SD2005 2SC4614 2SD1547 2SD1554 2SD2004 2SC4290A 2sc4814 2SC4040 2SD1650
Contextual Info: - ü £ T y p e No. / 2SD 2337 fö T te t te t te t s a 2SD 2338 □ — a t 2SD 2333 2SD 2334 ^ 2SD 2335 ^ 2SD 2336 / M anu f. « h m SANYO M TOSHIBA =£ « B HITACHI ÍI 2SD143Î 2SD23D0 2SD1878 2SD1545 2SD2311 2SD2252 2SD1547 2SC4744 2SD2251 2SD1547 2SC2882

2SC3617

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m

uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。

2SC3617

Abstract: tc1640
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Contextual Info: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.

transistor 2N3563

Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Contextual Info: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .

sc5 s dc 6v relay

Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997

2SC5664

Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Contextual Info: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation

4712 4723

Abstract: 2SC4933 2SC4566 2SC4717 4735 2SC2705 2Sc3468 2SC2242 2SC2688 2SC3611
Contextual Info: - m % Type No. tt « Manuf. h a m SANYO TOSHIBA m. NEC ±L HITACHI 'M dr il FUJITSU fâ T MATSUSHITA 2 2SC 4705 H ft 2SC 4706 X 1ty >r y 2SC3451 2 SC 4707 X S 2SC4485 2SC 4708 V tL 2SC4563 2SC 4712 cn 2 SC 4713 □ — a 2SC427Û 2SC3Ì22 2SC 4714 fò T 2SC4075

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905