2SC1815 0 Search Results

2SC1815

Abstract: C1815 C1815 GR 2SC1815-BL 2SC1815-GR 2SC1815BL 2SC1815GR 2SC1815 GR 2SC1815 Y 2SC1815O
Contextual Info: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF

2sc1815gr

Abstract: C1815 2SC1815-BL 2SC1815-GR 2SC1815 2SC1815BL 2SC1815 GR 2SC1815 Y 2SC1815O *c1815y
Contextual Info: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF

2SC1815

Abstract: 2SC1815Y C1815 y 2SC1815-BL 2SC1815-GR 2SC1815BL 2SC1815GR 2SC1815 GR 2SC1815 Y 2SC1815O
Contextual Info: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF

2SC1815-BL

Abstract: 2SC1815 2SC1815-GR 2SC1815BL 2SC1815GR 2SC1815 GR 2SC1815 Y 2SC1815O max 550 transistor
Contextual Info: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF

transistor 2sc1815

Contextual Info: T O SH IB A 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC1815 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V 0 EO = 50V (Min.), 10 = 150mA (Max.)

2SC1815L

Abstract: 2SA1015 2SC1815
Contextual Info: 2SC1815 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) •

2SA1015

Abstract: 2SC1815 2SC181 Common emitter amplifier 2sc1815 toshiba
Contextual Info: TO SH IBA 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC1815© Unit in mm AUDIO FREQUENCY VOLTAGE AMPLIFIER APPLICATIONS. LOW NOISE AMPLIFIER APPLICATIONS. • • High Breakdown Voltage, High Current Capability : V c e o = 50V (Min.), I q = 150mA (Max.)

Contextual Info: TO SHIBA 2SC1815 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • High Voltage and High Current : V0 EO = 50V (Min.), 10 = 150mA (Max.)

2SC460

Abstract: 2SC945 410A NEC 426 2SC2220 2SC783 2SD867 toshiba 2sc783 2SC2839 2SC1815
Contextual Info: 87 - it m £ Type No. 2SC 403 £ Manuf. * V — — SANYO 2SC2274 V — — 2 SC 403A 2SC 404 V “— 2 SC 405 > h m 2SC 406 3 m M £ TOSHIBA 2SC1815 2SC2839 2SC1815 ¿01 60) $Tm JL 2SC1576 2SC 410 ^ 2SC 410A 2SC829 2SC460 □ — A ROHM 2SC1740 2SC1740 2SC460

RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Contextual Info: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package

C1815 NPN Transistor

Abstract: npn TRANSISTOR c1815 pin configuration of transistor c1815 2SC1815 transistor C1815 y Transistor hFE CLASSIFICATION Marking CE pin configuration NPN transistor 2sc1815 2SC1815 GR c1815 g
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.

pin configuration NPN transistor 2sc1815

Abstract: pin configuration of transistor c1815 2SC1815 npn c1815 C1815 NPN Transistor IC 244 pin configuration 2s*1815 transistor
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications.

2SA1015 GR

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: 2SC1815 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC1815 ○ 低周波電圧増幅用 ○ 励振段増幅用 • • • • • 単位: mm 高耐圧でしかも電流容量が大きい。 : VCEO = 50 V (最小), IC = 150 mA (最大)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015 1

2SC1815

Abstract: 2SC1815L 2SA1015L-O 2SA1015LO 2SC1815 GR 2SA1015
Contextual Info: 2SC1815 L 東芝トランジスタ シリコンNPNエピタキシャル形 (PCT方式) 2SC1815(L) ○ 低周波電圧増幅用 ○ 励振段増幅用 • • • • • 単位: mm 高耐圧でしかも電流容量が大きい。 : VCEO = 50 V (最小), IC = 150 mA (最大)

NPN C1815

Abstract: micro transistor c1815 npn
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications.

Plastic Encapsulate Transistors

Abstract: 2SC1815 2SC1815 DATASHEET 2sc1815 type
Contextual Info: 2SC1815 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 ƔFEATURES . Power Dissipation PCM: 0.4 W Ta = 25 к . Collector Current 1 ICM: 0.15 A 2 . Collector-Base Voltage

2sa1015 sot-23

Abstract: 2sc1815 sot-23 2SA1015LT1 2sa1015 2SA1015L 2sa1015 equivalent 2SA1015M
Contextual Info: 2SA1015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating

st 2sc1815

Abstract: st2sc1815 2SA1015 2SC1815 2s*1815 transistor
Contextual Info: ST 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended.

Contextual Info: UTC 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to 2SA1015 1 TO-92 1:EMITTER 2:COLLECTOR 3. BASE

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

2SC1815 DATASHEET

Abstract: 2SC1815
Contextual Info: DC COMPONENTS CO., LTD. 2SC1815 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC1815 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage

2SC1815

Abstract: NPN SILICON EPITAXIAL TRANSISTOR C1815
Contextual Info: MCC
          !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.