2SC1623 L6 Search Results

2SC1623

Abstract: 2SC1623-L4
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L4 2SC1623-L5 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA

MARKING L5

Abstract: 2SC1623
Contextual Info: MCC 2SC1623-L5 TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1623-L6 2SC1623-L7 Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

2SC1623

Contextual Info: MCC 2SC1623-L5 TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1623-L6 2SC1623-L7 Features • • • • • • Halogen free available upon request by adding suffix "-HF"

2sc1623

Abstract: 3 pin mini mold transistor 2SC1623 sot 2sc1623 L5 SOT23-3
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1623 Preliminary NPN SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD „ 3 2 DESCRIPTION SOT-23 The UTC 2SC1623 is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain

Contextual Info: MCC 2SC1623-L5 TM Micro Commercial Components 2SC1623-L6
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1623-L7 Features • • • • • • Halogen free available upon request by adding suffix "-HF"

MARKING l7

Abstract: l4 transistor 2SC1623 MARKING L4 transistor marking L6 L6 TRANSISTOR L6 IC marking L6
Contextual Info: 2SC1623 SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 100 mA Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC1623 Preliminary NPN SILICON TRANSISTOR AU DI O FREQU EN CY GEN ERAL PU RPOSE AM PLI FI ER N PN SI LI CON T RAN SI ST OR M I N I M OLD 3 1 ̈ 2 DESCRI PT I ON SOT-23 The UTC 2SC1623 is a NPN silicon transistor using UTC’s

marking L6

Abstract: npn sot23 l6 2SC1623
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=600 Max. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V

2SC1623

Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

2SC1623L6

Abstract: 2SC1623
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=600 Max. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V

npn sot23 l6

Abstract: 2SC1623 marking 2SC1623
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

2SC1623-L6

Abstract: marking L6 2SC1623L7 2SC1623
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=600 Max. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V

2SC1623 marking

Abstract: 2SC1623
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=600 Max. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V

2SC162

Abstract: 2SC1623
Contextual Info: DC COMPONENTS CO., LTD. 2SC1623 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3

L6 TRANSISTOR

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.

2SC1623

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • High DC Current Gain: hFE = 200 TYP. in millimeters VCE = 6.0 V, IC = 1.0 mA 2.8 ± 0.2 0.4 +0.1 –0.05

2SC1623

Abstract: L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA z High voltage:VCEO=50V 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • High DC Current Gain: h p E = 200 TYP. VCE = 6 .0 V, lc - 1.0 mA in millimeters • High Voltage: V ceo = 50 V

2SA1036K

Abstract: 2SC1623 2SC1623 sot-23 l6 sot23
Contextual Info: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA

2SC1623

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1623 NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES <R> PACKAGE DRAWING Unit: mm • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V 0.4 +0.1 –0.05 2.8 ± 0.2 +0.1 0.65 –0.15

Transistor hFE CLASSIFICATION Marking CE

Abstract: 2SC1623
Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC1623 Features • • NPN Silicon Epitaxial Transistors High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V Maximum Ratings Symbol V CEO

MARKING l7

Abstract: sot-23 l6 2SC1623 transistor marking L6 MARKING L4
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current mA

2SC1623 sot-23

Abstract: 2sc1623 sot-23 Marking L6 L6 TRANSISTOR marking L6 sot23 l4 sot-23 marking L6 marking transistor sot-23 npn sot23 l6 marking l4 sot-23 sot-23 Marking l7
Contextual Info: 2SC1623 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High DC current gain :hFE=200(Typ)VCE=6V, High voltage:VCEO=50V — IC=1mA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage