2SC1359 C Search Results

2SC1359 C

Abstract: 2SC1359
Contextual Info: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC1359

Abstract: 2SC1359 C 2SA838
Contextual Info: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm • Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. ■ Absolute Maximum Ratings Ta=25˚C Parameter

2SC1359

Abstract: 2SC1359 C
Contextual Info: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: Transistors 2SC1359 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA0838 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 M Di ain sc te on na

2SA838

Abstract: 2SA838 TRANSISTOR equivalent TRANSISTOR 2sa838 2SC1359 2SC135
Contextual Info: Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 High transition frequency fT. Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

2SA838

Abstract: 2SC1359
Contextual Info: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm 5.0±0.2 4.0±0.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5

2SC1359 C

Abstract: ic CD4081 pin diagram datasheet 2SA733 2SC1359
Contextual Info: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be

2SC1359

Abstract: 2SC1359 C
Contextual Info: 2SC1359 0.03 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Optimum for RF Amplification of FM/AM Radios  High Transition Frequency fT TO-92 G

2SA838

Abstract: 2SA0838 2SC1359
Contextual Info: Transistor 2SA0838 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 5.1±0.2 • Features 0.7±0.2 High transition frequency fT. ■ Absolute Maximum Ratings 12.9±0.5 0.7±0.1 (Ta=25˚C)

2SC1359 C

Abstract: 2SA733 2SC1359
Contextual Info: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1359 TRANSISTOR NPN 1. EMITTER FEATURES z Optimum for RF Amplification of FM/AM Radios. z High Transition Frequency fT. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: Transistors 2SA0838 2SA838 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC1359 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.7±0.2 • High transfer ratio fT 12.9±0.5 0.7±0.1

2sc1424

Abstract: SC-5-1 2SC1457 2SC1507 2SC1324 2SC1336 2SC1345K 2SC1326 2SC1449 2SC1318A
Contextual Info: - 104 - m% * * Æ Î § Ta=25tC, ♦ EP(iTc=25‘C fi -t¡ m toi . *^fSU (V) 2SC1318A 2SC1324 2SC1326 2SC1336 2SC1342 2SC1343H 2SC1344 2SC1345 2SC1345K 2SC1359 2SC1360 2SC1360A 2SC1383 2SC1384 2SC1387 2SC1393 2SC1394 2SC1398 2SC1398A 2SC1413 2SC1413A 2SC1413AH

2SC1815

Abstract: 2SC 143 SANYO 2SC114 2SC105A 2SC693 2SC1359 C 2SC1398 2sc1740 2SC1359 2SC309
Contextual Info: K tt « Type No. * 2SC 108A * 2 £ $ 2SC 109A M. 2 2SC 1OSA « Manuf. SANYO a b X = TOSHIBA NEC ÌL HITACHI * ± FUJITSU a fé T MATSUSHITA iz 2SC4455 ¡L 2SC3393 2SC 117 a 2SC1398 * 2SC 11« ±L 2SC1398 * * * 2SC 119 Al 2SC 121 * 2SC 122 ' a a a a a 2SC1398

2SC1840

Abstract: 2sc1775 2SC1737 2sc2655 2SC1684 2SC2510 2SC1815 2SC1010 2SC3311A 2SC1740
Contextual Info: - 122 - m « £ Type No. Manuf. m a m z 2SC 1737 2SC 1738 2SC 1739 * 2SC 1740 2SC 1741 ». 2SC 1742 □— A □— A □— A X ^ = n SANYO ÍÜ NEC £ HITACHI * ± a FU JITSU fâ T MATSUSHITA -=L H M ITSUBISHI O — A ROHM 2SC4641 2SC1840 2SC1740 2SC3382

tl 271

Abstract: 2SC1815 2SC2926 2SC290B 2SC1923 2sc1959 2SC1907 288a 2SC266B 2SC828
Contextual Info: ft §y £ Type No. € = Manuf. SANTO m Ä 2 TOSHIBA m. NEC B HITACHI tL * ± a FU JITSU fé T MATSUSHITA m h MITSUBISHI □ — A ROHM * 2SC 251A n 2SC941TM 2SC1215 * 2SC1923 2SC1215 2SC2926 2SC1923 2SC1215 2SC2926 2SC 252 ^ a m * 2SC 253 * 2SC 260 ✓

2sc948

Abstract: 2N4935 2SC922 2SC1674 2sc717 2SC947 2SC839 2sc929 2SC930 2SC1730
Contextual Info: RF-IF High Frequency Transistors POLA­ RITY fT VCE sat HFE MAXIMUM RATINGS TYPE NO. CASE Pd (mW) ("A ) VCEO (V) IC min max IC (mA) VCE (V) max (V) IC (mA) nun (MHz) Cob Cre* max (PF) _ N.F. max (dB) 2N4934 2N4935 2N4936 2N4994 2N4995 N N N N N TO-72J TO-72J

2SD428

Abstract: 2sc458 2SC386A 2SC654 2SC382 2SC1923 2SC693 2SC1252 2SC1906 2SC1815
Contextual Info: m ft % T ype No. 2SC 639 .• o 18 2SC 640 B Ü B ÍL -• 2SC 641 K 41 ~ £ Manuf. Z >¥ SANYO K 2 T O S HIBA 2SC4454 2SC75 2 ( G > T M 2SC4455 2SC75 2 ( G ) T M NE C 2SC1815 M S 2SDS18 2SC 642A K S 2SD818 2SC 643 ✓ X $ 2SD818 e T 2SC693 2SC2999 2SC S

2SC817

Abstract: 2sc929 2SC948 2SC1730 transistor 2sc930 2SC947 2N5130 2n5179 2SC1789 2SC838
Contextual Info: NO. MAXIMUM RATINGS Pd ImWl •c ImAI V CE SAT V CEO (V) min max 'c ImAI V CE (V) max (V) 'c (mA) fT min Cob Cre« max max (MHz) (pF) (dB) N.F. 2N5127 2N5130 2N5131 2N5132 2N5179 N N N N N TO-106 TO-106 TO-106 TO-106 TO-72G 200 200 200 200 200 100 50 200

nec 2401

Abstract: nec 2405 NEC 2415 nec 2412 2SC2509 2SC2320 2SC1218 2sc2312 2SC2724 2SC2508
Contextual Info: - tt - 2SC 2388A 2SC 2389 ^ 2SC 2 3 9 0 ^ 2SC 2391 2SC 2392 s a *±a □— A □— A 2SC3040 2SC2Û75 2SD743 £ 2SC2562 2SC2634 2SD812 2SC1645 2SC3802K 2SC2619 2SC3124 2SC2755 2SC2812 2SC3324 2SC1622A 2SC2462 2SC241 2 K L N 2SC2312 2SC3324 2SC1622A 2SC2463

NEC 2532

Abstract: Ka 2535 2SC2240 2SC2460b 2SC2939 2SC2538 2SC1914A 2sc2238 2sc2555 2SC2407
Contextual Info: - tt B ÌL B tL B « M anuf. € = ¡ M £ T ype No. 2SC 2511 2SC 2512 2SC 2516 ^ 2SC 2517 # 2SC 2518 * * 2SC 2519 2SC 2522 2SC 2522A 2SC 2523 y 2SC 2527 y 2SC 2528 X * 2SC 2529 + 2SC 2530 ^ 2SC 2531 2SC 2532 ✓ 2SC 2534 r 2SC 2535 „ 2SC 2536 2SC 2537 2SC 2538

2SC930

Abstract: 2SC947 2SC948 2sc922 2SC1923-O 2SC929 2sc717
Contextual Info: RF-IF High Frequency Transistors MAXIMUM RATINGS TYPE NO. POLA­ RITY H„ VcE Hrf v* (m W ) Ic (mA) VcEO (V) min max N N N N N TO-92A TO-72G TO-72G TO-92B TO-72G 625 140 200 200 120 50 30 20 50 20 15 32 15 19 15 20 40 40 40 35 170 150 300 # 2SC829 2SC838

2SC1006

Abstract: 2SC1885 2SC3359 2SC710 2sd1944 2SC1957 2sc1815 2SC2320 2SC763 2SC2550
Contextual Info: - m - a S £ T y p e No. « Manuf. * = S A NYO 3E ^ T O SHIBA * 2SC 1973 fé T 2SC2314 * 2SC 1974 ✓ T T T T T ZSC2078 2SC2075 2SC2078 2SC1678 2SC 1980 fé *2 fé fé fé 2SC 1981 V - — ?sn9R5n * 2SC 1975 ^ * 2SC 1976 * 2SC 1977 * * * m. NEC tL HITACHI

2SA884

Abstract: 2sa835 2SA823 2SA899 2SA810 2SA866 2SA840 2SA852 2SA855 2SA809
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) 2SA801 2SA802 2SA803 2SA804 2SA805 2SA806 -20 -130 -130 -130 -180 -210 2SA807 -60 2SA808 -80 (V) (mA) (mW) -3 -5 -5 -5 -5 -5 -50 -30 -30 -50 -30 -30 Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE