2SC1162 C Search Results

2sc1162

Abstract: 2sc1162 equivalent 2SA715
Contextual Info: Inchange Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA715 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA715

Abstract: 2SC1162 LE20A
Contextual Info: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA715 DESCRIPTION • With TO-126 package • Complement to type 2SC1162 APPLICATIONS • Low frequency power amplifier applications PINNING PIN 1 DESCRIPTION Emitter Collector;connected to

2SA715

Abstract: 2sa715 equivalent 2sc1162
Contextual Info: SavantIC Semiconductor Product Specification 2SA715 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1162 APPLICATIONS ·Low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2sc1162

Abstract: 2SA715
Contextual Info: JMnic Product Specification 2SC1162 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA715 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2sc1162

Abstract: 2sc1162 equivalent 2SA715 2SC116 2SC1162 max frequency
Contextual Info: SavantIC Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA715 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

transistor 2SC1162

Abstract: 2SA715 2sc1162
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA715 DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -35V (Min) ·Complement to Type 2SC1162 APPLICATIONS ·Designed for use in low frequency power amplifier

2Sa715

Contextual Info: 2SA715 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B G

Hitachi DSA002788

Contextual Info: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35

2sc1162

Abstract: transistor 2SC1162 2SC1162C 2SC1162-B 2SC1162-C 2SC1162-D 2SC1162 C
Contextual Info: 2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-126 Low frequency power amplifier Emitter Collector Base CLASSIFICATION OF hFE 1

transistor 2SC1162

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC1162 TO-126 TRANSISTOR NPN 1. EMITTER FEATURES Low Frequency Power Amplifier 2. COLLECOTR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

to-126 transistor

Abstract: transistor 2SC1162 2sc1162
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC1162 TO-126 TRANSISTOR NPN 1. EMITTER FEATURES Low frequency power amplifier 2. COLLECOTR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

2sa715 equivalent

Abstract: 2sc1162 Hitachi DSA001650
Contextual Info: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35

2SC1162

Abstract: Hitachi DSA002754
Contextual Info: 2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage

Contextual Info: 2SA715 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B O

2SA715

Abstract: 2sc1162 2SA715A
Contextual Info: HITACHI 2SA715 — SILICON PN P EPITAXIAL LOW FREQ U EN C Y P O W E R AM PLIFIER COM PLEM ENTARY PAJR WITH 2SC1162 fc : aa 1. Emitter 2, C o llr d u i 3 Büt D im ensions in nun (JE D E C TO-126 MOD.) • A B S O LU T E MAXIMUM RATINGS (Tu=25°C) Iicm Symbol

2SC1260

Abstract: 2sc1255 2SC1150 2SC1278S 2SC1210 2SC1252 2SC1265 2SC1268 2sc1162 2SC1269
Contextual Info: - 102 - M X Ë f ê m £ £ Ta=25?C, *Ep[áTc=25'£ Pc ’C tu m Pc* (V) *± a 2SC1162 H i 2SC1164 2SC1165 2SC1ÎÔ9 MS (A) (V) (W) HS SW 60 50 1 0.8 (W) ( U A) œ tt (Ta=25'C) (max) 0.5 40 25 150 20 35 60 320 0.3 20 25 90 Vc e (V) Íc / I e (A) 1 (V) 0.6

2SC1135

Abstract: 2SC1168 2sc1451 2SC1426 2sc3800 2sd1111 toshiba 2sc783 2SD641 2SC710 2SD642
Contextual Info: - 114 - S! £ T y p e No. * tt £ Manuf. H £ SANYO m 2SC 1424 s 2SC 1425 B m 2SC 1426 2SC 1427 M NEC HITACHI ÍL "M ± FU J ITSU il tö T MATSUSHITA m h MITSUBISHI □ — A ROHM 2SC1199 s 2 S C 1200 m 2SC 3 8 7 A T M m. 2SC 1428 2SC 1429 V ~— * 2SC 1430

2SD424

Abstract: 2SD424 TOSHIBA 2SC2285A-KA TL 1084 2SC2993 2sc790 2sc400 2SC2762 2SC2926 2SD2023
Contextual Info: - 059 ^ 1060 1061 , 10 62 1066 1067 1068 1070 1071 1073 1074 / 1075 ^ 1076 1077 1077A 1079 1080 1081 1082 1083 1084 1085 1088 _ 1089 / 1095 10961097 1098_' 1098A 1099 1100 SANYO TOSHIBA *±a 1 NEC tL B HITACHI Ä ± ifi FUJITSU tö T MATSUSHITA = m MITSUBISHI

DAC 0804

Abstract: V18M432 CS8412 DAC LPR6520-0803 elna cerafine RD kamaya HC4046 PCM1702 HC590 nissei capacitor
Contextual Info: EVM-1702 EVALUATION MODULE FEATURES DESCRIPTION ● PRECISION DAC BOARD WITH 20-BIT RESOLUTION ● STANDARD DIGITAL AUDIO INTERFACE S/PDIF, EIAJ-1201 OPTICAL OR COAX INPUT ● SAMPLING RATE: 32kHz to 48kHz EVM-1702 is an evaluation module based on BurrBrown’s superior 20-bit DAC, the PCM1702. The

toshiba 2sd425

Abstract: 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD287C 2SD1391 2SD313 2SD867
Contextual Info: - m « € T y p e No. ' d 2SD 288 ^ 2SD 289 y B V B « a c 2SD 290 ^ 2SD 291 / 2SD 232 —• * 2SD 287 * 2SD 287C * * Manuf. h m SANYO 1m K 2 TOSHIBA A 2SD2023 V - — 2SD867 2SD1135 2SD1897 V - — 2SD880 2SD1135 2SD2023 ¿0UÖÖU ZÔU113ÏI ZSUZUZ3 * 2SD 312

NEC 2561

Abstract: NEC 2581 nec 2565 2565 nec 2SC2564 2SC2320 NEC 2562 2581 NEC 2561 nec 2SC237
Contextual Info: - 3 . n SANYO m ±L H IT A C H I □ — h. tt 2SC 2552 ^ 3fC S 2SC3038 2SC2333 ¿5b¿Oi¿ 2SC2738 2SC3968 2SC 2 553 / & 2SC3039 2SC2335 2SC2613 2SC2739 2SC4205 2SC2749 2SC3365 2SC2841 € TO SH IBA 2SC 2 5 5 5 " - ' NEC 2SC 2556-.- tó T 2SA505 2SC2690 2SC 2557

2SD454

Abstract: 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526
Contextual Info: - £ m « it Manuf. Type No. 2SD 439 ^ 2SD 457 * 2SD 459 * 2SD 460 * * 2SD 461 * 2SD 463 — * 2SD 454 ^ 3K SANYO = $ B n 2SC2236 2SC1449 2SD635 2SD970 K 2SD633 2SD970OO %t9 7 C 2SD473(H) 2SD524 2SD473(H) 2SC2120 2SC2001 ED 2SD471 2SD 469 -— m « T a *

Contextual Info: -J loaucti, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2SA715 Silicon PNP Power Transistor DESCRIPTION • Good Linearity of hFE • Collector-Emitter Breakdown VoltageV(BR)CEo= -35V (Min)

B0136

Abstract: 2SA1220 BD139 2sc1162 BD167 transistor bd170 2SA1220A 2SA715 BD137 npn 2SB1086
Contextual Info: TO-126 Plastic Package Transistors PIN CO NFIGURATIO N 1. EM ITTER 2. CO LLEC T O R 3. B A SE DIM 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 F I 0 .7 5 4.5 TYP. L 15.7 TYP. M 1.27 TYP. N 3 .7 5 TYP. S -th. 2 .2 5 TYP. 0 .4 9 G P T - *r MAX. A E T MIN.