2SC1162 C Search Results

2sc1162

Abstract: 2sc1162 equivalent 2SA715
Contextual Info: Inchange Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA715 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA715

Abstract: 2SC1162 LE20A
Contextual Info: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA715 DESCRIPTION • With TO-126 package • Complement to type 2SC1162 APPLICATIONS • Low frequency power amplifier applications PINNING PIN 1 DESCRIPTION Emitter Collector;connected to

2Sa715

Contextual Info: 2SA715 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B G

Hitachi DSA002788

Contextual Info: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35

2sa715 equivalent

Abstract: 2sc1162 Hitachi DSA001650
Contextual Info: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35

2sc1162

Abstract: 2SA715
Contextual Info: HITACHI 2SC1162 SILICON NPN EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER COMPLEMENTARY PAIR WITH 2SA715 1. [Imitier 2. Collector J. fl;« Dimcüsioi^ inmm} (JË Û Ë C TO-126 MOD. MAXIMUM COLLECTOR DISSIPATION CURVE • ABSO LU T E MAXIMUM RATINGS (Ta=25°C)

2SC1260

Abstract: 2sc1255 2SC1150 2SC1278S 2SC1210 2SC1252 2SC1265 2SC1268 2sc1162 2SC1269
Contextual Info: - 102 - M X Ë f ê m £ £ Ta=25?C, *Ep[áTc=25'£ Pc ’C tu m Pc* (V) *± a 2SC1162 H i 2SC1164 2SC1165 2SC1ÎÔ9 MS (A) (V) (W) HS SW 60 50 1 0.8 (W) ( U A) œ tt (Ta=25'C) (max) 0.5 40 25 150 20 35 60 320 0.3 20 25 90 Vc e (V) Íc / I e (A) 1 (V) 0.6

2SD424

Abstract: 2SD424 TOSHIBA 2SC2285A-KA TL 1084 2SC2993 2sc790 2sc400 2SC2762 2SC2926 2SD2023
Contextual Info: - 059 ^ 1060 1061 , 10 62 1066 1067 1068 1070 1071 1073 1074 / 1075 ^ 1076 1077 1077A 1079 1080 1081 1082 1083 1084 1085 1088 _ 1089 / 1095 10961097 1098_' 1098A 1099 1100 SANYO TOSHIBA *±a 1 NEC tL B HITACHI Ä ± ifi FUJITSU tö T MATSUSHITA = m MITSUBISHI

toshiba 2sd425

Abstract: 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD287C 2SD1391 2SD313 2SD867
Contextual Info: - m « € T y p e No. ' d 2SD 288 ^ 2SD 289 y B V B « a c 2SD 290 ^ 2SD 291 / 2SD 232 —• * 2SD 287 * 2SD 287C * * Manuf. h m SANYO 1m K 2 TOSHIBA A 2SD2023 V - — 2SD867 2SD1135 2SD1897 V - — 2SD880 2SD1135 2SD2023 ¿0UÖÖU ZÔU113ÏI ZSUZUZ3 * 2SD 312

2SD454

Abstract: 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526
Contextual Info: - £ m « it Manuf. Type No. 2SD 439 ^ 2SD 457 * 2SD 459 * 2SD 460 * * 2SD 461 * 2SD 463 — * 2SD 454 ^ 3K SANYO = $ B n 2SC2236 2SC1449 2SD635 2SD970 K 2SD633 2SD970OO %t9 7 C 2SD473(H) 2SD524 2SD473(H) 2SC2120 2SC2001 ED 2SD471 2SD 469 -— m « T a *

Contextual Info: -J loaucti, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2SA715 Silicon PNP Power Transistor DESCRIPTION • Good Linearity of hFE • Collector-Emitter Breakdown VoltageV(BR)CEo= -35V (Min)

2SC1840

Abstract: 2sc1775 2SC1737 2sc2655 2SC1684 2SC2510 2SC1815 2SC1010 2SC3311A 2SC1740
Contextual Info: - 122 - m « £ Type No. Manuf. m a m z 2SC 1737 2SC 1738 2SC 1739 * 2SC 1740 2SC 1741 ». 2SC 1742 □— A □— A □— A X ^ = n SANYO ÍÜ NEC £ HITACHI * ± a FU JITSU fâ T MATSUSHITA -=L H M ITSUBISHI O — A ROHM 2SC4641 2SC1840 2SC1740 2SC3382

2SC1124

Abstract: 2SC1177 2SC1137 2SC1145 2SC1116A 2SC1130 2sc1127 2SC1147 2sc1186 2SC1111
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC1101 1100 5 1A 50W(Tc=25ºC) 150 60 15 500 2SC1102 300 7 100 11W(Tc=25ºC) 150

2sa726

Abstract: 2SA798 2Sa750 2SA706 2sa735 2SA798 equivalent 2SA725 2SC1432 2SA773 2SA762
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA701 -30 -5 -50 200 125 200 -6 -1 80* 12 2SA702 -50 -5 -50 200 125

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt