2SB835 R Search Results

2SB835

Abstract: 2SB835 R
Contextual Info: 2SB835 2SB835 '> V zi > P N P x 4r'> t * ; u 7 V •^"Jf^/Si P N P Epitaxial Planar Power Amplifier • # » /F e a tu r e s V cE sat VcE(sat) • P S C S i S S t l So M type package suitable for automatic insertion, easier manual inser­ tion, self-standing on PC boad.

2SB833

Abstract: 2SB821 2SB817 2sb852k-a 2SB805 2SB806 2SB807 2SB808 2SB810 2SB811
Contextual Info: - 62 - Ta=25BC, *EnííTc=25?0 M 2SB805 2SB806 2SB807 2SB808 2SB810 2SB811 2SB814 2SB815 2SB816 2SB81T ¿¿DOIS 2SB821 2SB822 2SB824 2SB825 2SB826 2SB827 2SB828 2SB829 2SB831 2SB833 2SB834 2SB835 2SB837L 2SB837S 2SB841L 2SB841S 2SB849 2SB849A 2SB850 2SB850A

Contextual Info: Transistor 2SB835 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 1.0 0.85 * Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –20 V Collector to emitter voltage VCEO –18 V Emitter to base voltage

2sc2188

Contextual Info: # General-use Low Frequency Amplifiers and Others continued Package (No.) IT Applica­ tion Functions J] UJ S S M ini Type (D 1 ) S Mini Type Mini Type T Mini Type New S Type (D19) (D 5) (D39) (D10) ru ( A2SB1610 In I A2SD2472 TO-92 (D49) M Type (D40) TO-92 NL

B948A

Abstract: 2SA1284 2SA1757 2SA1636 2SA1444 2SA1462 2sa1307 2SA1637 2SB793 nec 1441
Contextual Info: m s T y p e No. a s Manuf. H i# SANYO 1423 / Z. * 2SA 1424 / M 2SA1669 2 SA 1425 ^ 2SA B H T O SHIBA NEC RN2002 AN 1 A 4 M B ÎL HITACHI U ± il FU J ITSU & T MATSUSHITA h m MITSUBISHI □ — A ROHM DTA114ES UN41Í1 2SA1245 * 2 2SA1768 2SB1473 2SA1284 2SB1 1 3 0 M

2SB832

Abstract: 2sd1047 equivalent 2SB837 2SB843 2SD1077 2sb875 2SB803 2SB818 2sb895 2SB845
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) DC Current Gain VCBO VEBO Ic Pc Tj fab/ft* Cob hFE PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB801 -45 -5 -1A 400 150 100 -2 -150 80* 26 2SB802 -60 -5 -1A