2SB1261 L Search Results

D1826

Abstract: 2SB1261 2SB1261-Z 2sb126
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SB1261-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.3 V 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SB1261-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.3 V 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Z Transistor

Abstract: 2SB1261-Z
Contextual Info: 2SB1261-Z 2SB1261-Z TRANSISTOR PNP TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR PNP TO – 252 FEATURES z Low VCE(sat) z High DC Current Gain 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SB1261-Z TO-251 TRANSISTOR PNP FEATURES z z 1. BASE High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)

2SB1261-Z

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261-Z TRANSISTOR PNP TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO:

2SB1261-Z

Abstract: high hfe transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SB1261-Z TO-251 TRANSISTOR PNP FEATURES z z 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol 1 1. BASE High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V

Contextual Info: 2SB1261 Transistor PNP TO-252-2L 1. BASE 1 2. COLLECTOR 3. EMITTER Features — — High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO

to251

Abstract: 2SB1261Z 2sb1261 l 2sb1261
Contextual Info: 2SB1261-Z PNP TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER Features 1 2 3 High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

2SB1261

Abstract: high hfe transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR PNP TO-252-2L FEATURES 123 1. BASE z z 1 High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB1261-Z

Abstract: MEI-1202 2sb1261 l 2SB1261
Contextual Info: DATA SHEET N E ^ r C SILICON TRANSISTOR 2 S B 1 2 6 1 -Z PNP SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SB1261-Z is designed for Audio Frequency Amplifier and PACKAGE DIMENSIONS in millimeters Switching, especially in Hybrid Integrated Circuits. FEATURES

2SB1261-Z

Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1261-Z TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features 2.30 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SB1261-Z TO-251 TO-252-2L TRANSISTOR PNP 123 FEATURES z z 1 High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB1261-Z

Abstract: 2SB1261Z
Contextual Info: Transys Electronics L I M I T E D TO-252 Plastic-Encapsulate Transistors 2SB1261-Z TRANSISTOR PNP TO-252 FEATURES Power dissipation 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range

HF-62

Contextual Info: SILICON TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR MP-3 D ESC R IPT IO N 2 S B 1 2 6 1 -Z is design ed for A u d io Frequency A m plifier and PACKAGE DIMENSIONS in millimeters Sw itching, especially in H ybrid integrated Circuits. FE A T U R E S

Contextual Info: MCC TM Micro Commercial Components Features x x • • 2SB1261
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics

Contextual Info: MCC TM Micro Commercial Components 2SB1261
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x • • • PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics

Contextual Info: MCC TM Micro Commercial Components Features x x • • • 2SB1261
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage Execllent current-to-gain characteristics

2SB1621

Contextual Info: SILICO N TR A N SISTO R 2SB1261-Z P N P S IL IC O N E P IT A X IA L T R A N S IS T O R M P -3 D E S C R IP T IO N 2 S B 1 2 6 1 - Z is d e sig n e d fo r A u d i o F r e q u e n c y A m p lif ie r a n d S w it c h in g , e sp e c ia lly in H y b r id In te g ra te d C irc u its.

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

2sb1355

Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
Contextual Info: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m

uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。