2SA966 Y Search Results

a966 transistor

Abstract: A966 transistor a966 a966 transistor datasheet a966, transistor 2SA966 a966 y 2SC2236
Contextual Info: 2SA966 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA966 Audio Power Amplifier Applications • Unit: mm Complementary to 2SC2236 and 3-W output applications. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA966

Abstract: 2SA966 Y 2SC2236
Contextual Info: TOSHIBA 2SA966 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA966 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 5.1 M A X • Complementary to 2SC2236 and 3Watts Output Applications. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

a966, transistor

Abstract: a966 transistor A966 a966 transistor datasheet 2SA966 transistor 2SA966 2SC2236 transistor a966 A-966 A966 PNP
Contextual Info: 2SA966 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA966 Audio Power Amplifier Applications • Unit: mm Complementary to 2SC2236 and 3-W output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2sa966

Abstract: transistor 2sC2236
Contextual Info: TOSHIBA 2SA966 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA966 Unit in mm AUD IO PO W ER A M PLIFIER APPLICATIONS 5.1 MAX. • Complementary to 2SC2236 and 3 W Output Applications. M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO

A966

Abstract: a966 y 2SA966 A966 PNP A-966 2SC2236 2SA966 Y
Contextual Info: 2SA966 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA966 ○ 低周波電力増幅用 • 単位: mm 2SC2236 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧

2SC2236

Abstract: 2sc2236 transistor transistor 2sC2236 2SA966
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC2236 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts output Applications. 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

c2236 transistor

Abstract: transistor C2236 C2236 NPN Transistor C2236 c2236 transistor equivalent C2236 Y 2SC2236 2SA966
Contextual Info: 2SC2236 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2236 Audio Power Amplifier Applications • Unit: mm Complementary to 2SA966 and 3-watt output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SC2236

Abstract: transistor 2sC2236 2SA966
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2236 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts output Applications. 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2236 TO-92L TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts Output Applications. 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA966

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA966 Unit in mm A U D IO POW ER AMPLIFIER APPLICATIONS. • Complementary to 2SC2236 and 3Watts Output Applications. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2SA966

Abstract: 2SC2236 transistor 2SA966
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SA966 TRANSISTOR PNP 1. EMITTER FEATURE Complementary to 2SC2236 and 3 Watts output Applications. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted )

2SA966

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA966 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation PCM : 0.9 2. COLLECTOR W(Tamb=25℃) 3. BASE Collector current A ICM : -1.5 Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA966 ＴＯ－９２ＭＯＤ TRANSISTOR（ PNP ） 1.EMITTER FEATURE Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SA966 TRANSISTOR PNP 1. EMITTER FEATURE Complementary to 2SC2236 and 3 Watts Output Applications. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted )

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC2236 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts output Applications. 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC2236A

Abstract: 2SC2236
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PRO CESS 2SC2236 A U D IO PO W ER AM PLIFIER APPLICATIONS. • Complementary to 2SA966 and 3 W atts Output Applications. M A X IM U M RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: TOSHIBA 2SC2236 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2236 Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS. 15.1MAX. Complementary to 2SA966 and 3 Watts Output Applications. 0.75M AX ffl 1.0MAX. 0.8MAX. M A X IM U M RATINGS (Ta = 25°C)

2Sj148

Abstract: 2sd1408 2SK364 2sc3281 2sc4793 2SK366 2SC3180N
Contextual Info: Power Amplifier Type No. Ic VcEO Pc fr NPN PNP A (V) (W) (MHz) 2SC2705 2SA1145 0.05 150 0.8 200 5 10m P.D 2SC1627A 2SA817A 0.4 80 0.8 100 10 10m P.D 2SC2235 2SA965 0.8 120 0.9 120 5 0.1 P.D D.O(3W) TYP Vce (V) * Application le (A) 2SC2236 2SA966 1.5 30 0.9

2SA966

Abstract: 2SC2236
Contextual Info: TOSHIBA 2SC2236 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2236 Unit in mm A U D IO POWER AMPLIFIER APPLICATIONS. 15.1 M AX. • Complementary to 2SA966 and 3 Watts Output Applications. 0.75M A X 1.0M AX. 0.8M A X . M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: M C C TO-92MOD Plastic-Encapsulate T ra n s is to rs ^ ^ 2SA966 TRANSISTOR PNP FEATURES !Is»lpat(on TO -92M O D P cm; 0.9W (Tamb=25°C) 1. EMITTER Icm: 2 .COLLECTOR -1.5 A k il^ iftCftf»-ba«e voltage V (BR)CBO: -30 V 3 .BASE temperature range 1 23 Tj,Tsig: -55 (C to + 1501c

c2236

Abstract: C2236 Y 2SC2236 2SA966
Contextual Info: 2SC2236 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2236 ○ 低周波電力増幅用 • 単位: mm 2SA966 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧

SS2205

Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
Contextual Info: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3

2SA748

Abstract: 2SA757B 2SB927 2sb861 2SB1043 2sa763 2SB596 2SB548 2SB1064 2SA715
Contextual Info: 13 - - sa € Type No. 2SA 752 te T s ïr H ÎL B ÎL b a 2SA 77 9 K ~ 2SA 780A m B NEC 2SB548 2SA1232 2SA985 2SA985 2SA10Î5 V - 9CAû‘in y-y'ry T $ 2SA659 •y-V ■y-virv ■y-virv V - V - te te B B T T Al i X s X s te T B 3ï » ± il FUJITSU fâ T

B948A

Abstract: 2SA1284 2SA1757 2SA1636 2SA1444 2SA1462 2sa1307 2SA1637 2SB793 nec 1441
Contextual Info: m s T y p e No. a s Manuf. H i# SANYO 1423 / Z. * 2SA 1424 / M 2SA1669 2 SA 1425 ^ 2SA B H T O SHIBA NEC RN2002 AN 1 A 4 M B ÎL HITACHI U ± il FU J ITSU & T MATSUSHITA h m MITSUBISHI □ — A ROHM DTA114ES UN41Í1 2SA1245 * 2 2SA1768 2SB1473 2SA1284 2SB1 1 3 0 M