2SA950 PNP Search Results

2SA952L

Abstract: 2SA952K diode GP 30M 2SA666 2N330A HA7815 sot89 diode bm LOW-POWER SILICON PNP 2SA952-L G20b
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 >= 2N6009 BC328•16 BC328BP 2SA952L 2SB810H 2SB811H 2SBll19S 2SBl121S BC178BP BC178PBK 20 2SA950 2SA950 2SA950 2SB811F 2SB1030 BC178C BC258C KSA542 ~~~~~B 25 30 2SA952K 2SB810E BC328·25 BC328CP KSB564A 2SB811E

Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

2SA950

Abstract: 2SC2120 2SA950 Y
Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 · 1 W output applications · Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

2SA950

Abstract: 2SC2120
Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC2120-0

Abstract: 2SA950 2SC2120
Contextual Info: TO SH IBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • . 5.1 MAX. High hpE • hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 MAX. 0.45 MAXIMUM RATINGS (Ta = 25°C)

2SA950

Abstract: 2SA950 Y
Contextual Info: 2SA950 2SA950 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER PCM : 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range Tj, Tstg: 3. BASE 1 2 3

2SA950

Abstract: 2SC2120
Contextual Info: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hRE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: •€> P e FORWARD INTERNATIONAL ELECTRONICS LTD. 2SA950 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER * Complement To2SC212Q * Collector Current Ic=-800mA ABSOLUTE MAXIMUM RATINGS at Tanfc=25°C Characteristic

2SA950

Contextual Info: DC COMPONENTS CO., LTD. 2SA950 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low-frequency power amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base

2SA950

Abstract: 2SA950 PNP
Contextual Info: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC1815 NPN SOT-23

Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
Contextual Info: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W Output Applications y Complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol

2SA950 PNP

Abstract: 2SA950 2SC2120 35VCEO
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W output applications y complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating

2SA950

Contextual Info: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA950

Contextual Info: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA950Y

Abstract: 2SA950-Y 2SA950
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating

2SA950

Abstract: 2SA950 PNP
Contextual Info: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

transistors 2SA950

Abstract: 2SA950
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER PCM : 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : -0.8 Collector-base voltage V(BR)CBO : -35 V

2SA950

Abstract: 2SC2120
Contextual Info: 2SA950 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features 1W output applications complementary to 2SC2120 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage

2SA950

Abstract: 2SC2120
Contextual Info: 2SA950 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA950 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • B 級プッシュプルで 1 W の出力が得られます。 • 2SC2120 とコンプリメンタリになります。

ta8529f

Abstract: TA8528 toshiba mcp
Contextual Info: TOSHIBA TA8529F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP PACKAGE TA8529F Stepping Motor Driver 1C TA8528 + 2SA950 X 4 MCP TA8529F is a stepping motor driver 1C which operates based on bipolar transistors. The device incorporates stepping motor driver 1C TA8528