2SA608 Search Results

2SD1028

Abstract: 2SK1597 2SK917 2SC1025 2SK919 2SB823 2SD977 2SC1051P 2SA1019 3SK190
Contextual Info: LIST O F D I S C O N T I N U E D T R A N S I S T O R S The following is an alpha-numerical list of the discontinued products as of October 31,1993. Type Number Replacement Type Number Replacement Type Number 2SA608SPA 2SA608NP 2SA608K-NP 2SA659 2SA930 2SA1017

2SA608N

Contextual Info: ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ˙Capable of being used in the low frequency to

C536 NPN TRANSISTOR

Abstract: C536 transistor transistor C536 A608 transistor pnp transistor A608 2SA608N 2SC536NF-NPA-AT transistor npn C536
Contextual Info: Ordering number : EN6324B 2SA608N/2SC536N Bipolar Transistor http://onsemi.com – 50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA Applicaitons • Capable of being used in the low frequency to high frequency range Features • Large current capacity and wide ASO

BC558AP

Abstract: TD401 BSX41 ED1802M LOW-POWER SILICON PNP 2N4917 TED1802L TED1802
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 50 55 60 2SA467G•TM·O 2MA5090 2SA509G·TM·O 2SA509G·O ST8705 2SA608NP 2SA608SP 2N4917 2N5374 BSY59 ED1602D TED1802M ED1802M V741 V741 A5T4062 A8T4062 RN4062 ~~~~8~2 65 70 75 80 2N4062 BC558A

2SA608

Abstract: TO92 LOW VCE PNP 2SA608 D
Contextual Info: 2SA608 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

2SA60

Abstract: 2SA608N 2SC536N 2SC536 TA-100055
Contextual Info: Ordering number : ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Capable of being used in the low frequency to high frequency range.

2sa608

Abstract: transistor 2sa608 2SA608 D
Contextual Info: 2SA608 2SA608 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: 2SA608S 2Plastic-Encapsulate Transistors PNP TO-92S Features Power dissipation PCM : 300 mW Tamb=25℃ Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA608 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage

sanyo 2033

Abstract: 2SA608 2SC536 transistor 2sA608 TRANSISTOR IFW 2005A Sanyo 2SA1782 2SA608KNP 2SA608NP
Contextual Info: SA NY O S E M I C O N D U C T O R CORP s iS S fe 7T=i707b o o m i a o 32E D 2033 2oo3A T P N P Epitaxial P la n a r S ilic o n T ran sis to rs General-Purpose Amp, Switching Applications 334 I Features . The 2SA608 is classified into 2 types of SP, NP according to the case outline.

2SA554

Abstract: 2sa584 2SA553 2SA564 2SA429GTM 2sa525 2SA552 2SA639S 2SC519A 2SC520A
Contextual Info: 1A m % fö <Ta=25^,*EPiäTc=25t; m 2 SA 119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 2SA512 2SA524 2SA553 2SA554 2SA558 2SA559 2SA559A 2SA562TM 2SA564 2SA564A 2SA580 2SA594 2SA6QSKNP 2SA608NP 2SA608SPA 2SA625 2SA638S 2SA639S 2SA656A 2SA657A 2SA658A 2SA6Î3 2SA673A

2SA608N

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA608N TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current : -0.15 A ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range

bc327 smd

Abstract: smd 2SA970 BC640 smd 2SB772 SMD AC188 bd140 SMD smd 2n2907a smd bc556b 2SA1309 BC327-40 SMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTpbl PNP copTMpoBKa no TOKy KonneKTopa Kofl: Tok [A] BF324 BFT92 BF472 BF970 2SA1123 2SA1124 2SA1145 2SA1360 2SA949 2SA992 BF821 2SA1208 2SA1309 2SA1370 2SA1371E 2SA608 2SA733 2SA933

2SA608S

Contextual Info: 2SA608S 2SA608S TO-92S TRANSISTOR PNP FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 300 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

2SC536E

Abstract: 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

LA5587

Abstract: 2SA608 2SD330 D1504 2SA608 E
Contextual Info: 注文コード No.N 2 5 7 4 E 半導体データシート No.N2574D をさしかえてください。 モノリシックリニア集積回路 汎用小型 LA5587 DCモータ速度制御IC 概要 LA5587はテープレコーダ,ラジカセ,レコードプレーヤなどの汎用小型DCモータの速度制御に最適

LA1266

Abstract: LA1177 LA1266 HW-40131 giken LM7000 LA1177 hw 40131 HW-6146 HW-6145
Contextual Info: Ordering number : EN2291C Monolithic Linear IC LA1266 Electronic Tuning Type AM/FM Tuner System Features • Minimum number of external parts required. • Excellent S/N • Local OSC with ALC • Local OSC buffer • Tuning indicator pin common with narrow-band stop signal and muting drive output

transistor 2N3563

Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Contextual Info: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

2SD808

Abstract: 2sb transistor 2sb808 2SC536e 2SA608e
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter

LA4470

Abstract: A100G equivalent for LA4470 3023A-S14HIC LA4471 speaker protector DIDE ZENER jrk-3 circuit diagram of rc car 2SA608
Contextual Info: [ Ordering number : EN 1866G LA4470,4471 Monolithic Linear ICs BTL-OCL 20W P o w e r A m p — for Ca r •■■■ //— S tereo / / / \ , Us e - Features ■ ; W jllf. High output: 20W/THD=lO*, 15W/THD^1i • Low distortion: 0,06? . Excellent ripple rejection: 65dB