2SA562 T Search Results

2SA562

Abstract: 2SA562Y transistor 2SA562 2SA562-Y 2SA562-O 2SA562 Y
Contextual Info: 2SA562 -0.5A, -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Excellent hFE Linearity G H CLASSIFICATION OF hFE Product-Rank 2SA562-O 2SA562-Y Range

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA562-O 2SA562-Y Features x x x x Excellent h FE Linearlity Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

2SA562

Abstract: transistor 2SA562
Contextual Info: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC1815 NPN SOT-23

Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
Contextual Info: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213

2SA562

Abstract: To92 transistor transistor 2SA562
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA562 TO-92 TRANSISTOR PNP FEATURES • Excellent hFE linearlity 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

2SA562 equivalent

Abstract: 2SA562
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA562 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM : 0.5 1. EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : -0.5 Collector-base voltage V (BR) CBO: -35 V

2SA562

Abstract: 2sa562 equivalent transistor 2SA562
Contextual Info: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SA562 TRANSISTOR PNP 1. EMITTER FEATURES Excellent hFE Linearlity 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value

2SA562

Contextual Info: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA562

Contextual Info: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2SA562 2Plastic-Encapsulate Transistors PNP TO-92 Features Power dissipation PCM : 0.5 W Tamb=25℃ Collector current ICM : -0.5 A Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ : 150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA562 TRANSISTOR（ PNP ） TO—92 FEATURE Power dissipation PCM : 0.5 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V BR CBO: -35 V Operating and storage junction temperature range

2SA562

Abstract: transistor 2SA562
Contextual Info: VI cc TO-92 P lastic-E n capsu iate T ran sisto rs 2SA562 TRANSISTOR NPN FE ATURES P cm : 0.5W (Tamb=25°C) Icm : -0.5 A É ü li lÉ É y ftMie voltage V(8R)CBO: -35 V storage junction temperature range Tj.Tsig: -55°C to + 150“C ELECTRICAL CHARACTERISTICS

2sa1015

Abstract: 2SA673 2SA935 2sa733 2SA562 564a 2SA572 2SA933 2SA953 2SA930
Contextual Info: - 8 - m % Type No. 2SA 549A 2SA 550 ^ 2SA 550A 2SA 551 2SA 552 2SA 553 2SA 554 2SA 555 2SA 556 2SA 557 2SA 558 2SA 559 2SA 559A 2SA 560#^ 2SA 561 ^ 2SA 562 % Manuf. B ÍL fâ fâ H B T T £ C î¥ 36 2Ê TOSHIBA 2SA984 2SA562 2SA1015 B a NEC B Al HITACHI 2SA778AK

2SA1019

Abstract: 2sb641 2SA1115 IR 638 2SB175 2sb1041 2SA1115 F 2sb618a 2SB549 2SB641 r
Contextual Info: - 48 - w. tt s Typ e No. « M anuf. 8 2SB 605 - 2 SB 606 * ± a „ Z # SANYO 2SB764 Ä 2 TOSHIBA m b NEC 2SA505 B ÎL HITACH I 2SA673A ÎL B 2SB 612 a îl 2SB817 B 8 2SB775 2SB686 2SB775 2SB686 - a # a « a s 2SB776 2SB688 2SB688 2SB 619 fè T 2SB816 2SB 620

2SB415

Abstract: sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661
Contextual Info: - 46 - S € Type No. tt V - - 2SB 521 „ 2SB 522 a € Maniif. , SANYO T O SHIBA a NEC a b HITACHI * ± a F U J ITSU fâ T MATSUSHITA □ MITSUBISHI — A ROHM 2SB507 2SB596 2SB856 2SB1291 2SB508 2SB596 LB 2SB856 2SB1291 2SA1069 2 SB 523 , = S 2SB632 2SB596

2SA562

Contextual Info: A 562 TRANSISTO R NPN FEATURES P o w e r d is s ip a tio n P cm: 0.5W (Tamb=25°C) C o lle c to r c u rre n t Icm; -0.5 A C o lle c to r-b a s e v o lta g e V(BR)CBO; -35 V O p e ra tin g and s to ra g e ju n c tio n te m p e ra tu re range -55°C to + 150°C

2N5225

Abstract: 2N5815 2N5816 2n5814 2N5822 2N5420 2N5042
Contextual Info: Medium Power Amplifiers and Switches M AXIMUM RATINGS TYPE NO. POLA­ CASE RITY H FE VcE sat VcEO Pd Ic (mW) (A) (V) VcER * min max Ic ^C E max (mA) (V) (V) (A) Ic fT C 0b min max (MHz) (MHz) COMPLE­ MENTARY TYPE 2N5042 2N5220 2N5221 2N5225 2N5226 P N P

bc 558 equivalent

Abstract: pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA467 HN / BC 327 / 8550 2SA578 HN / BC 560 / 9015 2SA721 HN / BC 559 / 9015 2SA494 HN / BC 559 / 9015

2SC875 D

Abstract: 2N5816 2SC875 2SA532 2SA503 2SA504 2N5822 2SC87 2sc1175 2N5819
Contextual Info: TYPE NO. P O L A R IT Y Medium Power Amplifiers and Switches CASE 'c A V CEO (V) min max 625 625 625 625 625 0.75 0.75 0.75 0.75 1 40 40 40 40 60 100 100 150 150 60 200 200 300 300 120 1 1 1 0.2 2 60 60 60 50 30 60 100 100 200 50 2 2 2 2 2 1 40 60 30 40

2SA572

Abstract: 2SC1006 2SC696 2SC708 2SC984 2SC708A 2SC734 equivalent 2SC680 2SA518 datasheet 2sa564
Contextual Info: Electrical characteristics Ta=25ºC Tj DC Current Gain hFE fab/ft* Cob VCE Ic (ºC) (MHz) (pF) (V) (mA) 175 70 -1 -10 200* 10 40125 -1 -120 >50 8 240 30175 -2 -150 80* 22 300 30175 -2 -150 80* 22 300 40125 -2 -50 100* 20 240 85 300* 1 85 250* 1 85 200* 1

2SC875 E

Abstract: 2N5816 2SC875 2N5822 2SB504A 2n5813
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS Ic ^CEO Pa mW (A) (V) H,'E POLA­ RITY CASE 2N5810 2N5811 2N5812 2N5813 2N5814 N P N P N TO-92F TO-92F TO-92F TO-92F TO-92F 625 625 625 625 625 0.75 0.75 0.75 0.75 0.75 25 25 25 25 40 60 60 150 150 60

2SC1918

Abstract: 2SC1909 2SC1984 2SC1943 2SC1979 2SC1964 2sc1963 2SC1915 2SC1917 2SC1919
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE fab/ft* Cob ºñ°í VCE Ic (ºC) (MHz) (pF) (V) (mA) 175 150 8 5 1400* 1.2 175 80 14 55 650* 2.8 150 150 5 10 130*

npn 8050 ecb

Abstract: 2n5401 2n3904 S8050 equivalent LB120 NPN S8550 S9011 npn M28S bc547 pnp Transistor S9013 BC558 ebc
Contextual Info: TO-92 PACKAGE MX MICROELECTRONICS ● Applied widely for AV,Fm,phones ,toys ,high&low frequency analogy amplifiers and controlers. ICBO TYPE NPN Ptot Ic VCBO VCEO ※ ICEO OR PNP ▲ mW (mA) VCES ICES VCB hFE fT PIN IC IB VCE IC *TPY (V) (mA) (MHZ) 123 100