2SA21 Search Results

Contextual Info: 2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zDimensions Unit : mm zApplications For switching, for muting.

Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)

2SA2151

Abstract: 2sc6011 200v 5a pnp 2sa215
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 APPLICATIONS ·Designed for audio and general purpose applications

2SA2182

Abstract: 2SA21
Contextual Info: 2SA2182 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 80 MHz typ. Absolute Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit

2SA21

Abstract: 2SA2154 2SC6026
Contextual Info: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026

2SA2183

Contextual Info: 2SA2183 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications • Unit: mm Low collector-emitter saturation : VCE sat = −1.0 V（max） Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA2154MFV

Abstract: 2SC6026MFV
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity

2SA2183

Contextual Info: 2SA2183 東芝トランジスタ シリコンＰＮＰエピタキシャル形 2SA2183 大電流スイッチング用 単位: mm コレクタ飽和電圧が低い。：VCE sat = −1.0 V（最大） 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格

2SA2190

Contextual Info: 2SA2190 東芝複合デバイス シリコンPNPエピタキシャル形トランジスタ 2SA2190 ○ 電力増幅用 ○ 励振段電力増幅用 • 単位: mm トランジション周波数が高い。 :ｆＴ=200MHz（標準） 絶対最大定格 Tc = 25°C

2SA2161J

Abstract: 2SC6037J
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)

2SA2162

Abstract: 2SC6036 2SC603
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174J 1.00±0.05 • Features VCBO Collector-emitter voltage (Base open) VCEO Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054G • Features M Di ain sc te on na tin nc ue e/ d  Package  Absolute Maximum Ratings Ta = 25°C

2SA2180

Abstract: 2SA21
Contextual Info: 2SA2180 Ordering number : EN8526 PNP Epitaxial Planar Silicon Transistor 2SA2180 50V / 5A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit . Features • • • • Adoption of MBIT processes.

SOT-346

Abstract: 2SA2018 2SA2030 2SA2119K SC-75A T146
Contextual Info: 2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. 0.8 1.6 0.2 0.3 zFeatures 1 A collector current is large.

2SA2163

Abstract: 2SA21
Contextual Info: Transistors 2SA2163 Silicon PNP epitaxial planar type For high frequency amplification Unit: mm • Features 3 2 0.60±0.05 1 0.39+0.01 −0.03 1.00±0.05  Absolute Maximum Ratings Ta = 25°C 0.25±0.05 Symbol Rating Unit Collector-base voltage Emitter open

2SA2122

Abstract: 2SC5950
Contextual Info: Transistors 2SA2122 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 0.425 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10 2 0.2±0.1 1 (0.65) (0.65)  Absolute Maximum Ratings Ta = 25°C

2SA2174J

Abstract: 2SA21 2SC6054J 2sa2174j_cob-vcb 2SA2174
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174J Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Features  Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Features  Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic

2SA2151

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA2151 Silicon PNP Power Transistor ./ f pX^ DESCRIPTION 1I • High Collector-Emitter Breakdown VoltageV(BR)CEO= -200V(Min) r^, I PIN 1.8ASE

n2503

Contextual Info: Ordering number : EN7379A 2SA2112 Bipolar Transistor -50V, -3A, Low VCE sat , PNP Single NMP http://onsemi.com Applicaitons • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes Features • • Adoption of MBIT process Low collector-to-emitter saturation voltage