2SA1790 Search Results

2SA1790J

Abstract: 2SC4626J SC-89
Contextual Info: Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5˚ Parameter Symbol Rating Unit VCBO −30 V Collector-emitter voltage (Base open)

2SA1790

Abstract: 2SC4626 SC-75
Contextual Info: Transistors 2SC4626 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1790 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 1˚ • Features Symbol Rating Unit VCBO 30 V Collector-emitter voltage Base open VCEO 20 V Emitter-base voltage (Collector open)

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

Contextual Info: Transistors 2SC4626 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1790 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 Rating Unit VCBO 30 V Collector-emitter voltage Base open VCEO 20 V Emitter-base voltage (Collector open)

Contextual Info: Transistors 2SA1790 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO −30 V Collector-emitter voltage (Base open)

2SA1790

Abstract: 2SC4626 SC-75
Contextual Info: Transistors 2SA1790 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 • Absolute Maximum Ratings Ta = 25°C 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High transition frequency fT

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SC4626G • Package • Optimum for RF amplification of FM/AM radios

2SA1790G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790G Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4626G • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type

2SA1790G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SC4626G • Features ue pl d in an c se ed lud pl vi

2SA179

Abstract: 2SA1790J 2SC4626J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 0.2+0.1 –0.05 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage

2SA1790J

Abstract: 2SC4626J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)

Contextual Info: Transistors 2SA1790 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 • High transition frequency fT • SS-Mini type package allowing downsizing of the equipment and automatic insertion through the tape packing

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

2SA1790

Abstract: 2SC4626 SC-75
Contextual Info: Transistors 2SA1790 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 0.8±0.1 1.6±0.15 Collector-base voltage Emitter open Collector-emitter voltage (Base open)

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 0.2+0.1 –0.05 • Features Symbol Ratings Unit VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790G Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4626G • Features ■ Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SA1790

Abstract: 2SC4626 SC-75
Contextual Info: Transistors 2SC4626 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1790 M Di ain sc te on na tin nc ue e/ d Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691