2SA1213 TRANSISTOR Search Results

2SA1213

Abstract: 2SC2873
Contextual Info: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 s (typ.)

Contextual Info: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 µs (typ.)

Contextual Info: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 s (typ.)

Contextual Info: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 µs (typ.)

2SA1213

Abstract: 2SC2873
Contextual Info: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) · High speed switching time: tstg = 1.0 µs (typ.)

Contextual Info: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 s (typ.)

2SA1213

Abstract: 2SC2873
Contextual Info: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 s (typ.)

2SA1213

Abstract: 2SC2873
Contextual Info: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 µs (typ.)

2SC1213Y

Abstract: 2SA1213Y 2SC1213-Y 2SA1213-Y 2SC2873 2sc1213 transistor KIN
Contextual Info: 2SA1213 2SA1213Y SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR « FEATURES * LO W SATU R A TIO N VOLTAGE * FAST SW ITCHING CO M PLEM ENTARY TYPE - 2SC2873 PART M AR KIN G DETAILS - 2SA1213 -N Y 2SA1213Y - NO B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

2SA1213

Contextual Info: 2SA1213 2SA1213 TRANSISTOR PNP SOT-89 FEATURES Power dissipation PCM : 0.5 Collector current ICM : -2 Collector-base voltage V(BR)CBO : -50 W (Tamb=25℃) 1. BASE A 2. COLLECTOR1 2 V 3 3. EMITTER Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

2SA1213-O

Contextual Info: 2SA1213 MCC TM Micro Commercial Components Features x x x x x 2SA1213-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

2SA1213

Abstract: pnp hfe 120-240 2SA1213Y 2SA1213-O
Contextual Info: 2SA1213 MCC TM Micro Commercial Components Features x x x x x 2SA1213-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

2SA1213-O

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x x x x 2SA1213-O 2SA1213-Y PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT- 89-3L 2SC2873 TRANSISTOR NPN 1. BASE FEATURES  Small Flat Package  High Speed Switching Time  Low Collector-emitter saturation voltage  Complementary to 2SA1213

2SA1213

Abstract: 2SC2873 smd 1A smd ic marking PC SMD 20A 2SC287
Contextual Info: Transistors SMD Type Power Switching Applications 2SA1213 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873

2SA1213Y

Abstract: PNP marking NY sot-89 2SA1213-O
Contextual Info: MCC 2SA1213-O TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y Features • x x x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC 2SA1213-O TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y Features • x x x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

2SC2873

Abstract: MY sot-89 2SA1213 Transistor+2SC2873
Contextual Info: 2SC2873 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES z Low saturation voltage z High speed switching time z Complementary to 2SA1213 MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter

2SA1213-O

Contextual Info: MCC 2SA1213-O TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y Features • x x x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

NY25

Abstract: 2SA1213-O
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x x x x 2SA1213-O 2SA1213-Y PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

2SA1213Y

Abstract: 2SA1213-O
Contextual Info: MCC TM Micro Commercial Components 2SA1213-O
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y Features x x x x x PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)

Contextual Info: 2SA1213 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR PNP SOT-89 FEATURES z z z z Small Flat Package Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time z Pb-Free package is available RoHS product for packing code suffix "G"

2SA1213

Abstract: 2SC2873
Contextual Info: 2SA1213 TOSHIBA 2 S A 1 213 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS Low Saturation Voltage : VCE (sat)= —0.5V (Max.) (IC = —1A) High Speed Switching Time: tstg=1.0/«s(Typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage