2SA1048 GR Search Results

2sa1048 transistor

Abstract: 2SA1048 2SC2458
Contextual Info: 2SA1048 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1048(L) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications • Small package. • High voltage: VCEO = −50 V (min) Unit: mm • High hFE: hFE = 70~400 •

2SA1048

Abstract: 2SC2458 2sa1048 transistor
Contextual Info: 2SA1048 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1048 Audio Frequency Amplifier Applications Unit: mm • Small package • High voltage: VCEO = −50 V (min) • High hFE: hFE = 70~400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)

2SC3378

Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
Contextual Info: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current

Contextual Info: MCC 2SA1048-Y 2SA1048-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • • Lead Free Finish/Rohs Compliant "P"Suffix designates

2SA1048GR

Abstract: 2SA1048-GR 625oC
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SA1048-Y 2SA1048-GR Features • • • • • • • • Lead Free Finish/Rohs Compliant "P"Suffix designates

2SA1048GR

Abstract: 2SA1048-GR 2SA1048Y 2SA104
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SA1048-Y 2SA1048-GR Features • • • • • • • Lead Free Finish/Rohs Compliant "P"Suffix designates

2SC2458

Abstract: 2sc2458 equivalent 2SA1048
Contextual Info: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.

2sa1048 transistor

Abstract: 2sc2458 equivalent 2SA1048 2SC2458
Contextual Info: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.

2SA1048

Abstract: 2SC2458 2SA1048 GR
Contextual Info: 2SA1048 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1048 ○ 低周波増幅用 単位: mm • 小型パッケージでマイクロモータなどの小型機器の設計に適しています。 • 耐圧は VCEO = −50 V (最小) で電流容量が大きい。

2sa1048 transistor

Abstract: transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SC2458 2SA104
Contextual Info: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.

2sa1048 transistor

Abstract: 2SA1048 2sc2458 equivalent 2SC2458
Contextual Info: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.

2sa1048 transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC2458 TRANSISTOR NPN 1. EMITTER FEATURES z High Current Capability z High DC Current Gain z Excellent hFE Linearity z Complementary to 2SA1048 2. COLLECTOR

2SA1048

Abstract: 2SC2458
Contextual Info: 2SA1048 L シリコンPNPエピタキシャル形 (PCT方式) 東芝トランジスタ 2SA1048(L) ○ 低周波増幅用 ○ 低周波低雑音用 • • • • • • 単位: mm 小型パッケージでマイクロモータなどの小型機器の設計に適しています。

2sa1048 transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1048 TRANSISTOR PNP TO-92S FEATURES High voltage: VCEO=-50V(Min.) z High hFE: hFE=70~400 z Low noise: NF=1dB(Typ.),10dB(Max.) z Complementary to 2SC2458 1. EMITTER

2sa1048 transistor

Abstract: 2SC2458 2sc2458 equivalent 2SA1048
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1048 TRANSISTOR PNP TO-92S FEATURES High voltage z High hFE z Low noise z Complementary to 2SC2458 1. EMITTER z 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2sa1048 transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1048 TRANSISTOR PNP TO-92S FEATURES High voltage z High hFE z Low noise z Complementary to 2SC2458 1. EMITTER z 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: SILICON NPN EPITAXIAL TYPE TRANSISTOR A U D IO AM PLIFIER A PPLICATIONS. • • • • • • High Current Capability : Iç = 150mA Max. High DC Current Gain : hpg = 70~700 Excellent hpE Linearity : hFE (Ic = 0.1mA)/h FE(IC = 2mA) = 0-95(Typ.) Low Noise : NF (2) = ldB (Typ.), lOdB (Max.)

Contextual Info: T O SH IB A 2SC2458 TOSHIBA TRANSISTOR AUDIO AMPLIFIER APPLICATIONS. • • • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458 High Current Capability : Iç = 150mA (Max.) High DC Current Gain : h;pE = 70—700 Excellent hpE Linearity : hFE (Ic = o.lmA) 1hFE (Ic = 2mA) = 0-95 (TyP-)

2SC2458 GR

Abstract: 2SC2458 2SA1048
Contextual Info: 2SC2458 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 Unit: mm • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC2458

Abstract: 2sa1048
Contextual Info: 2SC2458 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2458 Audio Amplifier Applications Unit: mm • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

Contextual Info: T O SH IB A 2SC2458 TOSHIBA TRANSISTOR AUDIO AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458 Unit in mm 4.2MAX. Iß = 150mA (Max.) High Current Capability High DC Current Gain hEE = 70—700 Excellent hpE Linearity : hFE (Ic = o.lmA) 1hFE (Ic = 2mA) = 0-95 (TyP-)

TRANSISTOR L 287 A

Abstract: ma-6008 2SA104 2SA1048 2SC2442 337B
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SC2458

Abstract: 2SC2458 GR 2sc2458l 2SA1048
Contextual Info: 2SC2458 L シリコンNPNエピタキシャル形 (PCT方式) 東芝トランジスタ 2SC2458(L) ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 • • • • • • 単位: mm 小型パッケージでマイクロモータなどの小型機器の設計に適しています。

2SC2458 GR

Abstract: 2SC2458 IC3000 2SA1048 2SA1048 GR
Contextual Info: 2SC2458 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2458 ○ 低周波増幅用 ○ AM 増幅用 • • • • • • 単位: mm 小型パッケージでマイクロモータなどの小型機器の設計に適しています。