2SA1013-0 C Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.

2sc2383

Abstract: 2SA1013 transistor 2sa1013
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1013 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE y High voltage:VCEO=-160V y Large continuous collector current capability y Complementary to 2SC2383 2. COLLECTOR

2SA1013

Abstract: 2sc2383 transistor 2sa1013
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA1013 TRANSISTOR TO-92L PNP 1. EMITTER FEATURE y High voltage:VCEO=-160V y Large continuous collector current capability y Complementary to 2SC2383 2. COLLECTOR 3. BASE

2SA1013

Contextual Info: 2SA1013 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm COLOR TV VERT. DEFLECTION OUTPUT APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. • High Voltage : V c e O = - 160V Large Continuous Collector Current Capability. Recommended for Vert. Deflection Output & Sound Output

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2383 TO-92L TRANSISTOR NPN FEATURE y High Voltage: VCEO=160V y Large Continuous Collector Current Capability y Complementary to 2SA1013 1. EMITTER 2. COLLECTOR 3. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1013 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE y High Voltage:VCEO=-160V y Large Continuous Collector Current Capability y Complementary to 2SC2383 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1013 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURE y High voltage y Large continuous collector current capability 2. COLLECTOR 1 2 23 3. EMITTER MARKING: 1013 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted )

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1013 Features • • • • PNP Epitaxial Silicon Transistor Capable of 0.9Watts of Power Dissipation.

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1013 Features • • • • PNP Epitaxial Silicon Transistor Capable of 0.9Watts of Power Dissipation.

2SC2383

Abstract: 2SC238 2SA1013
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2383 U nit in mm COLOR TV VERT. DEFLECTION OUTPUT APPLICATIONS. 5 .'M AX COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. < X • • • • High Voltage : V c e O = 160V Large Continuous Collector C urrent Capability. Recommended for Vert. Deflection O utput & Sound O utput

2Sj72

Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
Contextual Info: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *

2sa10

Abstract: 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1012 2SA1013 2SA1015 2SA1035 2SA1016K
Contextual Info: - 20 - m n Ta=25t , *En(àTc=25t;) m 2SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1016K 2SA1018 2SA1020 2SA1022 2SA1025 2SA1029 2SA1030 2SA1031 2SA1032 2SA1034 2SA1035 2SA1036K 2SA1037K 2SA1037KLN 2SA1038 2SA1039 2SA1040 2SA1041 2SA1042 2SA1043 2SA1044

2SA1013

Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 1013 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A080BJ-01 芯片厚度：240±20µm 管芯尺寸：800x800µm 2 焊位尺寸：B 极 124×124µm 2；E 极 221×110µm 2

2SC2398

Abstract: 2SC2375 2SC1815 2SC2431 2SC2378 2SA1013 2SC2362 2SC2363 2SC2383 2SC2384
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

TA1343NG

Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Contextual Info: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3