2PG001 IGBT Search Results

2PG001 IGBT Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT50J123		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)	Datasheet
GT30J122A		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS	Datasheet
GT30J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J341		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS	Datasheet

2PG001 IGBT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2pg001 Abstract: 2PG003 Contextual Info: Realizes High-Speed Switching and Low VCE sat IGBT for PDP Driving 2PG001/2/3 Overview 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 φ3.1±0.1 2PG001⋅⋅⋅VCE(sat)<2.5V 1.3±0.2 1.4±0.1 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 2PG002/2PG003⋅⋅⋅VCE(sat)<2.4V	Original	2PG001/2/3 2PG001â 2PG002/2PG003â 2PG001/2/3 2pg001 2PG003	PDF
2pg001 Abstract: 2PG001+equivalent Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features  Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V	Original	2002/95/EC) 2PG001 O-220F-A1 2PG001 2PG001+equivalent	PDF
2pg001 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-220F-A1 	Original	2002/95/EC) 2PG001 O-220F-A1 2pg001	PDF
2pg001 Abstract: 2pg001 datasheet 2PG001 IGBT 2PG001 equivalent Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High speed hall time: tf = 250 nsec(typ.)	Original	2002/95/EC) 2PG001 O-220F-A1 2pg001 2pg001 datasheet 2PG001 IGBT 2PG001 equivalent	PDF
2PG001 Abstract: Panasonic IGBT TO220 2PG002 2PG003 Contextual Info: Fast switching 150 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These	Original	2PG00X 2PG001ã 2PG002/2PG003ã 150ns 2PG002ã 190ns 2PG001 Panasonic IGBT TO220 2PG002 2PG003	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928	PDF