2N7000 MOSFET Search Results

2N7000-TR1 equivalent

Abstract: 2N7000 2n7000 equivalent 2N7000 MOSFET 2N7000KL 2N7000KL-TR1 2N7000KL-TR1-E3 2N7000-TR1 2n7000 data sheet 2n7000 equivalents
Contextual Info: Specification Comparison Vishay Siliconix 2N7000KL vs. 2N7000 Description: N-Channel, 60 V D-S MOSFET Package: TO-92 Pin Out: Identical Part Number Replacements: 2N7000KL-TR1 Replaces 2N7000-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free Version) Replaces 2N7000-TR1

Contextual Info: N-CHANNEL SMALL SIGNAL MOSFET 2N7000 FEATURES • Fast switching sp eed s • TO-92 Package PRODUCT SUMMARY Part Number V ds RöS on b(on) 2N7000 60V 5.0 Q 200 mA MAXIMUM RATINGS Sym bol 2N7000 Drain-Source Voltage (1) Characteristic V dss 60 vac Drain Gate Voltage (Rgs =1.0Mfi) (1)

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

2N7000L-T92-B

Abstract: 2N7000L utc 2n7000l 2N7000 MOSFET 2n7000g
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

Contextual Info: UTC 2N7000 MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents

2N7000 MOSFET

Abstract: 2n7000
Contextual Info: UTC 2N7000 MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents

2N7000 MOSFET

Abstract: 2n7000 equivalent 2N7000 2N7000L mosfet 2N7000 2N7000L-T92-B utc 2n7000l 2n7000 data sheet 2N7000L TO-92 mosfet to92 high current
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2N7000 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to

ST2N

Abstract: STO-23 ST2N transistor 2N7002 MARKING DSS SOT23 2N7000 2N7000G 2N7002 transistor 2n7002 2N7002 SOT23
Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE

2N7002 MARKING

Abstract: 2N7002 2N7002 st 2N7002 di codes marking st2n 2N7000 MOSFET
Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET Table 1: General Features TYPE 2N7000 2N7002 • ■ ■ Figure 1: Package VDSS RDS on Id 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A TYPICAL RDS(on) = 1.8Ω @10V

2n7000 equivalent

Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225

07153

Abstract: 03aa02
Contextual Info: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .

2N7002

Abstract: 2N7002 MARKING ST2N 2N7000 MOSFET 2n7000 2N7000G 2N7002 SOT23 codes marking st2n 2n7000 equivalent 2n7000 equivalents
Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET Table 1: General Features TYPE 2N7000 2N7002 Q Q Q Figure 1: Package VDSS RDS on Id 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A TYPICAL RDS(on) = 1.8Ω @10V LOW Qg

2N7000

Abstract: BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5

Small Signal MOSFET

Contextual Info: N-CHANNEL SMALL SIGNAL MOSFET 2N7000 FEATURES TO-92 1 • Fast switching speeds • TO-92 Package ' V ’ i 1. S o u rc e 2. Gate 3. Drain PRODUCT SUMMARY Part Number V ds R d S o ii ta< on ) 2N7000 60V 5.0 n 200 mA MAXIMUM RATINGS Characteristic Drain-Source Voltage (1)

2N7000 MOSFET

Abstract: Mosfet 2n7000
Contextual Info: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .

Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET TYPE VDSS RDS on ID 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE 3 1 SOT23-3L DESCRIPTION

VQ1000J

Abstract: 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225

ST2N

Abstract: 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97
Contextual Info: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET Features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application ■ Switching applications

marking BS SOT23

Abstract: 2N7000 circuits
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application

code for 2n7002

Abstract: 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 BS170 VQ1000P SILICONIX 2N7002
Contextual Info: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5

ST2N transistor

Abstract: 2N7000 ST2N 2N7002 st2n codes marking st2n low vgs mosfet to-92 transistor ST2N 2N7000 MOSFET 2N7002 JESD97
Contextual Info: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application

Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE

2n7002

Abstract: mosfet 2N7000 2N7000
Contextual Info: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET Table 1: General Features TYPE 2N7000 2N7002 Q Q Q Figure 1: Package VDSS RDS on Id 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A TYPICAL RDS(on) = 1.8Ω @10V LOW Qg