2N6489 SWITCH Search Results

2N6486

Abstract: 2N6487 2N6488 2N6489 2N6490 2N6491
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 2N6486, 6487, 6488 2N6489, 6490, 6491 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 2N6486, 6487, 6488 2N6489, 6490, 6491

2n6491

Contextual Info: r z T SGS-THOMSON Ä 7 # KflOtgœilLieraiSiOOS 2N6486/87/88 2N6489/90/91 COMPLEMENTARY SILICON POWER TRANSISTORS . 2N6487, 2N6488, 2N6489 AND 2N6490 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N6486, 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors mounted in Jedec

2N6488

Abstract: 2N6487 2N6486 2N6489 2N6490 2N6491
Contextual Info: JMnic Product Specification 2N6486 2N6487 2N6488 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Excellent safe operating area ・Complement to type 2N6489 2N6490 2N6491 respectively APPLICATIONS ・Power amplifier and medium speed switching applications

2N6491

Abstract: 2N6486 2N6489 2N6490 2N6487 2N6488
Contextual Info: Inchange Semiconductor Product Specification 2N6489 2N6490 2N6491 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Excellent safe operating area ・Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS ・Power amplifier and medium speed

2N8491

Abstract: 2N648B 2N6491 equivalent TA8327 equivalent 2n6488 tektronix 454 TA8328 2n8491t 2N6486 equivalent 2n6490
Contextual Info: f ' G E SOLIP STATE 3875081 □ 1 DE I3fl7S0fll 00174S0 E G E SOLID STATE 0 7 È ~ 1 7 4 5 Ò -D T '? ? '/ * G eneral-Purpose Power ' - — 3 2 > '< z / 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491

2N6489 RCA

Abstract: 2N6490 RCA RCA 2N SOLID STATE TRANSISTORS 2N6488 power amplifier circuit 2n6489
Contextual Info: G E SO LI» STATE 3875081 CÌ E □1 SOLID DE I 3 f l 7 S 0 f l l STATE 00174S0 E O T T T t Ï S Ô - D ~ ' f ' ? ? - / 3 G en eral-P u rp ose P ow er T ran sisto rs_ —* ' * * •"T - 3 -3 * ^ ? / 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491

2N6488 MOTOROLA

Abstract: 2N6486 2N6486 MOTOROLA 2n6488 2n6487
Contextual Info: MOTOROLA SC XSTRS/R F 1SE d I b 3b7SS4 GDfl4fci5E fi | MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS hpE = 2 0 - 1 5 0 @ lc = 5.0 Adc = 5.0 Min @ l c = 15 Adc VCEO (sus) = 40 Vdc (Min) - 2 N 6486, 2N 6489 = 60 Vdc (Min) - 2N6487, 2N 6490

FT3055

Abstract: 2N3055 TO-220 SE9302 2N6385 MJ2501 MJ3001 SE9301 SE9304 SE9305 SE9401
Contextual Info: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING V q e O (Cont’d) DEVICE NO. Polarity NPN I PNP Item •c = 10.0 A Max Continuous 1 SE9304* SE9404* hFE @ ic v CEO V A Max Min/Max *T MHz Min(Typ) PD(Max) W T C=25°C Package

2N6180

Abstract: 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372 2N6472 2N6488 2N6491
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 2 00 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT

2M3055

Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S Comple­ Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047

RCA 40410

Abstract: rca 40362 40410 RCA transistor 40406 RCA transistor 40319 transistor 40410 TRANSISTOR 40391 RCA transistor 40410 2N5296 RCA 2N6474
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

BU108

Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

2SC1419

Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.

2SA1046

Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

2SC124

Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS

electronic ballast with MJE13003

Abstract: BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light

c 3421 transistor

Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability

MJ15003 300 watts amplifier

Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications

TIP35C transistor replacement

Abstract: TIP35C replacement 2N3055 equivalent BU108 D45H11 equivalent replacement BDX54 2n3772 EQUIVALENT BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V

BU108

Abstract: D45C electronic ballast with MJE13003 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 40 WATTS The BUL43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light

TIP36

Abstract: BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage —