2N5581J) Search Results
2N5581J) Datasheets (6)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2N5581J |
|
Package = TO-46 Level = Jantxv Vceo (V) = 50 Vcbo (V) = 75 Vebo (V) = Ic (A) = 0.80 Power (W) ta = 0.5 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 120 VCE(sat) (V) = 0.30 | Original | 210.77KB | 2 | ||
| 2N5581JAN | New England Semiconductor | NPN SILICON SWITCHING TRANSISTOR | Original | 52.69KB | 2 | ||
| 2N5581JANTX | New England Semiconductor | NPN SILICON SWITCHING TRANSISTOR | Original | 52.69KB | 2 | ||
| 2N5581JANTXV | New England Semiconductor | NPN SILICON SWITCHING TRANSISTOR | Original | 52.69KB | 2 | ||
| 2N5581JV |
|
Package = TO-46 Level = Jantxv Vceo (V) = 50 Vcbo (V) = 75 Vebo (V) = Ic (A) = 0.80 Power (W) ta = 0.5 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 120 VCE(sat) (V) = 0.30 | Original | 210.77KB | 2 | ||
| 2N5581JX |
|
Package = TO-46 Level = Jantxv Vceo (V) = 50 Vcbo (V) = 75 Vebo (V) = Ic (A) = 0.80 Power (W) ta = 0.5 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 120 VCE(sat) (V) = 0.30 | Original | 210.77KB | 2 |