2N5484 CHARACTERISTICS Search Results

2N5484

Abstract: Calogic 2n5484 equivalent 2N5486 DS012 2N5485 1076 2n5485 equivalent CALOGIC LLC
Contextual Info: CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS012 REV B 2N5484 – 2N5486 LLC ELECTRICAL CHARACTERISTICS Continued (TA = 25oC unless otherwise specified) SYMBOL PARAMETER 2N5484 MIN MAX 2N5485 MIN MAX 2.5 NF Noise Figure (Note 2)

2N5484

Abstract: 2N5486 MOTOROLA 2N5486 equivalent 2N5486 2N5484 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current

2N5485

Abstract: 2N5486 2N5484 Field Effect Transistor MRC137 MRC138 power electronic handbook transistors handbook 2n5484 equivalent MRC136
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N5484; 2N5485; 2N5486 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel field-effect transistors FEATURES

2N5486 equivalent

Abstract: 2n5484 equivalent 2N5485 2N5484 2N5486 MRC135
Contextual Info: Philips Semiconductors Product specification N-channel field-effect transistors 2N5484; 2N5485; 2N5486 QUICK REFERENCE DATA FEATURES • Low noise SYMBOL • Interchangeability of drain and source connections V ds drain-source voltage • High gain. bss drain current

SOT 23 1ft

Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486
Contextual Info: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*

2N5486

Contextual Info: bL>53^31 00241E5 S31 H A P X Philips Sem iconductors N-channel field-effect transistors 2N5484; 2N5485; 2N5486 N AMER PHILIPS/DISCRETE L.7E ]> QUICK REFERENCE DATA FEATURES SYMBOL • Low noise • Interchangeability of drain and source connections • High gain.

2N5485

Abstract: 2N5484 MMBF5485 2N5486 2n5484 equivalent MMBF5484 MMBF5486 transconductance 2N5485 transconductance 2N5486
Contextual Info: MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G D G S TO-92 S SOT-23 D Mark: 6B / 6M / 6H N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

SST5484

Abstract: 2N5484 2n5485 equivalent 2N5485 2N5486 AN102 AN105 SST5485 SST5486 2n5484 equivalent
Contextual Info: 2N/SST5484 Series Siliconix NĆChannel JFETs 2N5484 2N5485 2N5486 Product Summary SST5484 SST5485 SST5486 Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5484 -0.3 to -3 -25 3 1 2N/SST5485 -0.5 to -4 -25 3.5 4 2N/SST5486 -2 to -6

2N5484

Contextual Info: io duati, Line. TELEPHONE: 973 376-2922 {212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. JFET VHF/UHF Amplifiers 2N5484 2N5486 N-Channel — Depletion 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Unit Symbol Value VDG

2NS48

Abstract: 2NS484 SST5484
Contextual Info: T e m ic 2N/SST5484 Series Siliconix N-Channel JFETs_ 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gts Min (mS) 2N/SST5484 —0.3 to - 3 -2 5 3 1 2N/SST5485 -0 .5 to - 4

2N5486

Abstract: BF5484 2n5485 2N5484 transconductance 2N5485
Contextual Info: M IC Ü N D U C T Q R ^ MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 Mark: 6B / 6M / 6H N-Channel RF Amplifier T his device is designed prim arily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

Contextual Info: B 22 9 -9 7 2N5484, 2N5485, 2N5486 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR • VHF/UHF AMPLIFIERS Absolute maximum ratings at T* » 25°C Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Power Dissipation Power Derating

2n5484 equivalent

Abstract: 2N5486 MOTOROLA 2N5484 2N5486 2N5484 characteristics 2N5486 equivalent
Contextual Info: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VH F/UHF A m plifiers N-Channel — Depletion 2N 5484 2N 5486 1 DRAIN MAXIMUM RATINGS Rating D rain-G ate Voltage Reverse G ate-S ource Voltage Drain Current Symbol Value Unit Vd G

SST5484

Abstract: 2N5485 2n5485 equivalent transistor 2N5484 2N5486 AN102 SST5485 SST5486 Siliconix AN102
Contextual Info: 2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5484 –0.3 to –3 2N/SST5485 –0.5 to –4 –25 3 1 –25 3.5 2N/SST5486

Contextual Info: NH N-Channel JFETs fTSSconix in c o r p o r a t e d DEVICE TYPE PACKAGE Single TO-92 TO-226AA • Single SOT-23 • SST4416 Single TO-72 (TO-2Û6AF) • 2N4416,2N4416A Single Chip • Available as NH1CHP, NH2CHP, NH3CHP 2N5484, 2N5485, 2N5486 J304, J305

2N5484

Contextual Info: 2N5484 2N5486* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIM UM RATINGS Rating Symbol Value VdG 25 Vdc V g SR 25 Vdc Drain-Gate Voltage Reverse Gate-Source Voltage 'd 30 mAdc 'G(f) 10 mAdc Pd 350 2.8 mW mW/°C T j. Tstg - 65 to +150 °C Drain Current Forward Gate Current

SST5484

Contextual Info: 2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number -0 .3 to - 3 -2 5 3 loss Min mA 1 2N/SST5485 -0 .5 to - 4 -2 5 3.5 4 2N/SST5486 -2 1 0 -6 -2 5 4 8 V G S (off) (V) V (B R )G S S Min (V)

SST5484

Contextual Info: Temic 2N/SST5484 Series S e m i c o n d u c t o r s N-Channel JFETs 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 Product Summary Part Number V c s w o tV V BR)GSS M i n ( V ) 2N/SST5484 -0 .3 to - 3 -2 5 3 1 2N /SST5485 -0 .5 to - 4 -2 5 3.5 4 2N /SST5486

Contextual Info: CRO 2N5484 2N5485 2N5486 2N5434, 2N5485 and 2N5486 are N-Channel Ju n c tio n F ie ld E ffe c t designed T r a n s is to r s . fo r o s c il l a t o r s VHF / UHF and They are a m p lifie r s , analog m ainly m ixers, sw itch e s. ; D B o tto m V ie w S o u rc e & D iain

2n5484 jfet

Abstract: 2N5486 vcr 2N5484 transconductance 2N5485 2N5485 2n54 N-Channel 2N5434 2N5486 75re KS 40
Contextual Info: DiMmü^DfL 2 N 5 4 8 4 -2 N 5 4 8 6 N -C h a n n e l J F E T FEATURES PIN CONFIGURATION • Specified for 400 M H z Operation TO-92 • Can Be Used as a Low Capacitance Switch D * Economy Packaging • C rM< 1.0 pF ABSOLUTE MAXIMUM RATINGS Draln-Gate Voltage

j201 jfet

Abstract: J201 equivalent matched pair JFET Siliconix AN102 datasheet j201 jfet FET J202 2N4338 2N4339 2n5484 jfet 2N5912
Contextual Info: AN102 JFET Biasing Techniques D Introduction Engineers who are not familiar with proper biasing methods often design FET amplifiers that are unnecessarily sensitive to device characteristics. One way to obtain consistent circuit performance, in spite of device variations, is to use a combination of constant

2N5485

Abstract: TP5668 NJ132 NJ16 TP4858A TP4859 TP4859A TP4860 TP4860A TP4861
Contextual Info: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • 0513350 00Q3b01 SE MI C ON DS /ICS 93D 03601 h M J> 7 ^ ^ -Z .S PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits Igss Min. (V) IG

F245A

Abstract: BF244 BF245 BF245C JFET BF245B BF245 motorola
Contextual Info: BF244A,B CASE 29-04, STYLE 22 TO-92 TO-226AA BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M R A TIN G S Rating Sym bol Value U nit D rain-S ource Voltage VDS ±30 Vdc Dram -G ate Voltage vdg 30 Vdc G ate-Source Voltage vgs 30 Vdc id 100 m Adc

2N5668

Abstract: 2N5670 2N5669 2N5668 motorola
Contextual Info: 2N5668 thru 2N5670 CASE 29-04, STYLE 5 TO-92 TO-226AA M A XIM U M RATINGS Rating Sym bol Value Unit VDS 25 Vdc Vdc Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ T a = 25°C