2N5401 TRANSISTOR Search Results

2N5401

Abstract: transistor 2N5401 1N914 2N5400
Contextual Info: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO

2N5401

Abstract: 2N5400 motorola 1N914 diode datasheet transistor 2N5401 1N914 2N5400 MOTOROLA 2N5401 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage

C2N5401

Abstract: 2N5401
Contextual Info: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO

transistor 2N5401

Abstract: 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1999 Apr 08 2004 Oct 28 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA

2N5401 fairchild

Abstract: transistor 2N5401 2N5401 2n5401 transistor
Contextual Info: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor

2N5457

Contextual Info: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage

2N5401

Abstract: 1N914 2N5400
Contextual Info: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage

transistor 5401

Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
Contextual Info: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor

transistor 2N5401

Abstract: 2N5401
Contextual Info: 2N5401 PNP Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current 2N5401 -150 -160 -5.0 600 Symbol VCEO VCBO VEBO IC Total Device Dissipation TA=25 C

Contextual Info: 2N5401 PNP Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current 2N5401 -150 -160 -5.0 600 Symbol VCEO

2N5401 fairchild

Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 SOT-23 E B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*

2n5401y

Abstract: 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 2N5401YBU 5401 GM
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE

Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain,  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N5401L-x-AB3-R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number

ic 23721

Abstract: 23732 23721
Contextual Info: Micmsemi PNP Transistors | Part Number ' PNP JANTXV2N3763 JANTXV2N3763L 2N4126 2N3906 2N4403 PN2907A 2N5401 2N2907A 2NS091 2NS093 2N5094 2N5096 2N3053 2N3774 2N3778 2N3245 2N3775 2N3779 2N3776 2N3780 2N3777 2N3781 2N3660 2N3661 2N3782 2N3719 2N3867 2N3867S

2N5401

Abstract: transistor 2N5401 2N5551 diodes inc diodes inc 2N5551 2N5400 2N5550 2N5551 2n5401 transistor of pnp transistor 2n5401 2N5401 TO-39
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5400; 2N5401 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification PNP high-voltage transistors

transistor 2N5401

Abstract: 2N5401 2N5551
Contextual Info: 2N5401 Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with 2N5551

2N5401

Contextual Info: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V

2N5401G

Contextual Info: 2N5401 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 150 Vdc Collector − Base Voltage VCBO 160 Vdc Emitter − Base Voltage

2N5401

Abstract: transistor 2N5401 2N5400 2N5550 2N5551 st2n5401
Contextual Info: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.

2n5401 equivalent

Contextual Info: SHD426008 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 943, REV. - PNP SMALL SIGNAL TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N5401 Absolute Maximum Ratings* Symbol Parameter VCEO VCBO VEBO IC TJ, Tstg TA = 25°C unless otherwise noted