2N5109 TRANSISTOR Search Results

2n5109

Abstract: transistor 2N5109
Contextual Info: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR. 1 of 1 Home Part Number: 2N5109 Online Store 2N5109 Diodes RF & M IC RO WAVE DISC RETE LO W PO WER TRANSISTO RS Transistors Enter code INTER3 at

2N5109

Abstract: 19500/453 2N5109 JAN 2n5109 transistor transistor 2n5109
Contextual Info: Data Sheet No. 2N5109 Generic Part Number: 2N5109 Type 2N5109 Geometry 1007 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/453 Features: • VHF-UHF amplifier silicon transistor. • Housed in TO-39 case. • Also available in chip form using the 1007 chip geometry.

2N5109

Contextual Info: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER

2n5109

Abstract: transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor
Contextual Info: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER

2N5109

Abstract: high frequency transistor
Contextual Info: 2N5109 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5109 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE 20 V PDISS 1.0 W @ TA = 25 C O 2.5 W @ TC = 75 C O CHARACTERISTICS

2n5109

Abstract: Transistor 2N5109 VCE-15V
Contextual Info: 2N5109 SILICON NPN RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.

JANTX2N5109

Abstract: JANTX2N3735 23219 2n2107 jantx2n3866
Contextual Info: Microsemi NPN Transistors Part Number 2N5109 JAN2N5109 JANTX2N5109 JANTXV2N5109 2N3866A JAN2N3866A JANTX2N3866A JANTXV2N3866A 2N2106 2N2107 2N2108 2N3498 2N3499 JAN2N3498 JAN2N3499 JANTX2N3498 JANTX2N3499 JANTXV2N3498 JANTXV2N3499 2N2726 2N2727 2N4000 2N4001

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •

JANTX 2N5109

Abstract: 2N510
Contextual Info: 2N5109 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J

JANTX 2N5109

Abstract: 2N5109 2N5109J 2N5109JS 2N5109JV 2N5109JX
Contextual Info: 2N5109 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J

JANTX 2N5109

Contextual Info: 2N5109 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 2n3866 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •

2N5109

Abstract: transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •

2N5109

Contextual Info: ^sml-Conaucto'i iPioaucti, Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features II • Silicon NPN, To-39 packaged VHF/UHF Transistor

Contextual Info: 2N5109 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2N5109+JAN Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2N5109 motorola

Abstract: transistor 2N5109 c0851 2n5109
Contextual Info: 4b E D • h3b?2S4 OOcmOb b 1 ■ flOTb T -3 3 -n MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N5109 MOTOROLA SC XSTRS/R F The RF Line 1.2 GHz 50 mAdc HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed specifically for broadband applications requiring good

Contextual Info: 2N5109+JANTX Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2N5109+JANTXV Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2N5109

Abstract: rca 2N5109 RCA-2N5109 TA2800 2n5109 rca CF-102-Q1 IN5109 transistor 2N5109 rca 0190 transistor field strength meter
Contextual Info: File No. 281 RF Power T ran sisto rs Solid State Division 2N5109 Silicon N-P-N Overlay Transistor High G ain fo r Line A m p lifie rs in C A T V and M A T V E q uip m en t Features: • High gairvbandwidth product ■ Large dynam ic range ■ Low distortion

2N5109

Abstract: multi-emitter transistor transistor 2n5109 P15V 2n5109 transistor
Contextual Info: 3 0E D • 7TET237 0031225 T " P 3 ì^ > S C S -T H O M S O N n O M H IL liO T n ^ O lM D O l 2 N 5 1 0 9 S fi S-THOMSON EPITAXIAL PLANAR NPN CA TV U LTR A -LIN EA R HIGH GAIN T R A N ­ SISTO R - The 2N5109 is a multi-emitter silicon planar epitaxial N PN transistor in Jedec TO-39 metal case. It is desi­

2N5109

Abstract: CP214 2N5109B chip die npn transistor chip die transistor
Contextual Info: PROCESS CP214 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.5 MILS Base Bonding Pad Area 2.9 x 3.4 MILS Emitter Bonding Pad Area 2.9 x 3.4 MILS

2N5109

Abstract: NPN planar RF transistor CP229 chip die npn transistor chip die transistor
Contextual Info: PROCESS CP229 Small Signal Transistors NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 8.7 MILS Base Bonding Pad Area 3.2 MILS Diameter Emitter Bonding Pad Area 3.4 x 3.4 MILS Top Side Metalization

2N5109 motorola

Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­