2N4401 TRANSISTOR Search Results

PN4403

Abstract: 2N4401 transistor 2N4401 MMST4401 MMST4403 SST4401 SST4403 T106 UMT4401 UMT4403
Contextual Info: UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor Switching UMT4401 / SST4401 / MMST4401 / 2N4401 !External dimensions (Units : mm) UMT4401 2.0±0.2 0.65 0.65 SST4401 MMST4401 2N4401 Packaging type UMT3 R2X T106 SST3 R2X T116

2N4401

Abstract: Diodes Inc. 2N4401
Contextual Info: 2N4401 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N4401 Availability Online Store

PN4403

Abstract: 2N4401 MMST4401 MMST4403 SST4401 SST4403 T106 UMT4401 UMT4403 Transistor 2N4401
Contextual Info: UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor Switching UMT4401 / SST4401 / MMST4401 / 2N4401 !External dimensions (Units : mm) UMT4401 2.0±0.2 0.65 0.65 SST4401 MMST4401 2N4401 Packaging type UMT3 R2X T106 SST3 R2X T116

2n4401 rohm

Contextual Info: SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor Switching SST4401 / MMST4401 / 2N4401 zFeatures 1) BVCEO>40V (IC=1mA) 2) Complements the SST4403 / MMST4403 / PN4403. zExternal dimensions (Unit : mm) 2.9±0.2 SST4401 0.95 +0.2 −0.1 1.9±0.2

2N4401 transistor

Abstract: 2N4401 NPN Switching Transistor 2N4401 2N4403 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor Product specification Supersedes data of 1997 May 07 1999 Apr 23 Philips Semiconductors Product specification NPN switching transistor 2N4401 FEATURES PINNING • High current max. 600 mA

2N4401

Abstract: SPEC-C31 SST4401 UMT4401 MMST4401
Contextual Info: Transistors UMT4401 / SST4401 / MMST4401 / 2N4401 SPEC-C31 624

Contextual Info: Transistors UMT4401 / SST4401 / MMST4401 /2N4401 NPN Medium Power Transistor Switching I UMT4401 /SST4401 /MMST4401 /2N4401 •Features •E xternal dimensions (Units : mm) 1 ) BV ceo< 40V (lc = 1 m A ) 2 ) Complements the UMT4403/SST4403/MMST4403/PN4403

PNP 2N4403

Abstract: 2N4401 2n4403 configuration 2N4403 2N4401 520 2n4401 configuration
Contextual Info: 2N4401 & 2N4403 General Purpose Switching Transistors Features: • NPN/PNP Silicon Planar Epitaxial Transistors. • General purpose Switching Applications. • 2N 4401 Type NPN. • 2N 4403 Type PNP. 2N4401 NPN TO-92 2N4403 PNP Dimensions Minimum Maximum

Contextual Info: N AMER PHILIPS/DISCRETE hlE D bbS3R31 OOBfllSb 074 ZN44UU 2N4401 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in plastic TO-92 envelope for use in general purpose applications. QUICK REFERENCE DATA 2N4400 2N4401 Collector-emitter voltage

2n4401 052

Abstract: 2N4401L 2N4401 transistor NPN Transistor TO92 25v 2N4401 2N4401L-T92-B 2N4401-T92-B 2N4401-T92-K B1I Transistor 3 pin 2N4401 NPN Switching Transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 TO-92 *Pb-free plating product number: 2N4401L

2n4401 052

Abstract: UTC 2N4401
Contextual Info: UTC 2N4401 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS* Ta=25°C, unless otherwise specified

2N4401

Abstract: 10D3 2N4403
Contextual Info: 2N4401 2N4401 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-09-12 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse

2N4401 NPN Switching Transistor

Abstract: 10D3 2N4401 2N4403
Contextual Info: 2N4401 2N4401 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-09-12 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse

Contextual Info: UTC 2N4401 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS* Ta=25°C, unless otherwise specified

Contextual Info: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics.

Contextual Info: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2n4401 331

Abstract: SOT-23 2N4401 2n4401 052 mark 2x sot 2N4401 CBVK741B019 F63TNR MMBT4401 PN2222N 2N4401 NPN Switching Transistor
Contextual Info: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Y3 SOT23

Abstract: SOT23 MARK Y3 TRANSISTOR 2N 4401 2n4401 2n4401 cross W3 marking SOT-223
Contextual Info: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

JAN2N2222A

Abstract: JANTX2N2222A JANTXV2N2222A 2N0696 JAN2N1613 JANTXV2N3737 JANTX2N2060 JAN2N0497 JAN2N3700 NPN3
Contextual Info: Micmsemi NPN Transistors Part Number JAN2N2222A JANTX2N2221A JANTX2N2222A JANTXV2N2221A JANTXV2N2222A 2N3700 JAN2N3700 JANTX2N3700 JANTXV2N3700 2N3737 JAN2N3737 JANTX2N3737 JANTXV2N3737 2N0696 2N0697 JAN2N0696 JAN2N0696S JAN2N0697 JAN2N0697S 2N3904 2N4401

2n4401 smd

Abstract: 2N4401 smd 2n4401
Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number 2N4401 product family TO-92 Plastic-Encapsulate Biploar Transistors

st2n4401

Abstract: 2N4401 2N4400 ic CD4081 pin diagram datasheet 2n4401 s
Contextual Info: ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package

2N4401 NPN Switching Transistor

Abstract: 2N4400 2N4401 2n4401 amplifier 2N4401 transistor 100MHZ NPN TRANSISTORS NPN transistor 2n4400
Contextual Info: Small Signal General Purpose Transistors NPN 2N4400/2N4401 Small Signal General Purpose Transistors (NPN) Features • NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: TO-92 TO-92, Plastic Package

2N4401

Abstract: 2N4401RLRAG 2N4401RLRA 2N4401RLRM 2N4401RLRP 2N4401RLRPG 2N4401ZL1
Contextual Info: 2N4401 Preferred Device General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO

2N4401 NPN Switching Transistor

Abstract: 2N4401
Contextual Info: DC COMPONENTS CO., LTD. 2N4401 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector