2N4400 DATASHEET Search Results

2N4400 datasheet

Abstract: 2N4400 CBVK741B019 F63TNR MMBT4400 PN2222N
Contextual Info: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N4400

Abstract: CBVK741B019 F63TNR MMBT4400 PN2222N
Contextual Info: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N4400TA

Abstract: SOT23 MARK Y3 2N4400BU MARKING W3 SOT23 TRANSISTOR
Contextual Info: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N4400TFR

Abstract: 2N4400BU 2N4400TA 2N4400-D81Z 2N4400
Contextual Info: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N4400

Abstract: MMBT4400
Contextual Info: 2N4400 / MMBT4400 MMBT4400 2N4400 C E C B TO-92 SOT-23 E B Mark: 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N4401 NPN Switching Transistor

Abstract: MPSL01 2N4400 2N4401 2N4953 MPS6531 PN2222 PN2222A
Contextual Info: This NPN Transistors Material IT In □ NPN General Purpose Amplifiers and Switches continued t-1 b-1 ÜJ a Device No. Copyrighted CBO CEO (V) (V) (V) Min Min Min TO-92 (92) 140 120 TO-92 (92) 60 Case Style a □ jr a jr cr MPSL01 2N4400 UJ CE(SAT) EBO (nA) @

national PN2222A

Contextual Info: NPN Transistors NPN General Purpose Amplifiers and Switches V Device No. Case Style CBO V C EO V V Min (V) Min (V) Min Max 10 EBO MPSL01 TO-92 (92) 140 120 6 2N4400 TO-92 (92) 60 40 6 2N4401 TO-92 (92) 60 40 *CBO w (V> h FE @ 'c ft V C E Min Max (mA) 00

Contextual Info: EE 330 Spring 2014 Laboratory 8: Semiconductor Parameter Measurements Objective: The objective of this laboratory experiment is to become familiar with using a semiconductor parameter analyzer for extracting model parameters for devices. A second objective is to

Q4010LS2

Abstract: BJT amplifiers BJT IC Vce red laser pointer bipolar junction transistor Q4015L5 laser diode mosfet triggering circuit MC14007 Photo resistor bjt ic operational amplifier
Contextual Info: EE 330 Laboratory 9 Semiconductor Parameter Measurement and Thyristor Applications Spring 2011 Objective: The objective of this laboratory experiment is to become familiar with using a semiconductor parameter analyzer for extracting model parameters for devices. A second

Rs 1006b

Contextual Info: TC www.vishay.com Vishay Dale Through Hole Transformers Converter FEATURES • Designed especially for low-power solid state circuits • Designed for mounting on printed circuit boards • Miniature size for minimum space • High conversion efficiency from DC input to filtered DC

Contextual Info: TC www.vishay.com Vishay Dale Through Hole Transformers Converter FEATURES • Designed especially for low-power solid state circuits • Designed for mounting on printed circuit boards • Miniature size for minimum space • High conversion efficiency from DC input to filtered DC

alternative for LM317

Abstract: TMMH-124-01-F-D-RA-ES hd-sdi pcb layout 2N4400 2N4402 49R9 GO1525 GS1524 GS1528 GS1560A
Contextual Info: GS1560A A Guide to Designing with the HD-LINX II Dual Rate Serial-to-Parallel Converter EB1560 rev 3 Reference Design 29352 - 1 February 2005 1 of 25 GS1560A Reference Design Contents 1. Overview .3

DG211BDY-E3

Abstract: DG211 DG211B DG211BDJ DG211BDY DG212 DG212B DG212BDJ DG212BDY dg212bdq
Contextual Info: DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon

DG202BDJ-E3

Abstract: DG202BDY-T1-E3 3DG201B
Contextual Info: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon

Contextual Info: DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon

V10090

Abstract: DG212BDY-T1
Contextual Info: DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon

DG201A

Abstract: DG201B DG201BAK DG201BDJ DG201BDJ-E3 DG202 DG202B DG202BAK DG202BDJ
Contextual Info: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon

Contextual Info: DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon

Contextual Info: DG308B, DG309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B, DG309B analog switches are highly improved versions of the industry-standard DG308A, DG309. These devices are fabricated in Vishay Siliconix’ proprietary silicon

DG308

Abstract: DG309B
Contextual Info: DG308B, DG309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B, DG309B analog switches are highly improved versions of the industry-standard DG308A, DG309. These devices are fabricated in Vishay Siliconix’ proprietary silicon

Contextual Info: DG308B, DG309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG308B, DG309B analog switches are highly improved versions of the industry-standard DG308A, DG309. These devices are fabricated in Vishay Siliconix’ proprietary silicon

Contextual Info: DG444, DG445 Vishay Siliconix Quad SPST CMOS Analog Switches • Audio switching FEATURES • Low on-resistance: 50  • Battery powered systems • Low leakage: 80 pA • Data acquisition • Low power consumption: 22 nW • Sample-and-hold circuits • Fast switching action - tON: 120 ns

DG445DY

Contextual Info: DG444, DG445 Vishay Siliconix Quad SPST CMOS Analog Switches • Audio switching FEATURES • Low on-resistance: 50  • Battery powered systems • Low leakage: 80 pA • Data acquisition • Low power consumption: 22 nW • Sample-and-hold circuits • Fast switching action - tON: 120 ns