2N4124 F Search Results

2N4123

Abstract: 2N4123RLRM 2N4124 2N4124G
Contextual Info: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage Value VCEO 2N4123 2N4124 Collector−Base Voltage Vdc 30 25 VCBO 2N4123

2N4124 MOTOROLA

Abstract: 2N4123 MOTOROLA 2N4124 2N4123
Contextual Info: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

2N4123

Abstract: 2N4124 2N4123 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

Contextual Info: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Vceo = 2N4123: 30V 2N4124: 25V • C ollector Dissipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :2N 4123

Contextual Info: MCC Micro Commercial Components TM Features NPN Silicon General zThrough Hole TO-92 Package zCapable of 625mWatts of Power Dissipation zCase Material: Molded Plastic. UL Flammability • 2N4123 2N4124
  omponents 20736 Marilla Street Chatsworth

2n3904 npn fairchild

Abstract: 2N3904 2N4124 MMBT4124 2n3904 sot 23 SOT23B
Contextual Info: 2N4124 MMBT4124 C E C TO-92 BE SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

Contextual Info: MCC Micro Commercial Components TM 2N4123 2N4124
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Silicon General zThrough Hole TO-92 Package zCapable of 625mWatts of Power Dissipation

Contextual Info: MCC Micro Commercial Components Features • 2N4123 2N4124
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM • • • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

a5t4123

Abstract: 5t41
Contextual Info: TYPES 2N4123, 2N4124, A5T4123. A5T4124 N-P-N SILICON TRANSISTORS Î B U L L E T IN N O . D L -S 7 3 1 1 4 7 1 , N O V E M B E R 1 9 7 1 - R E V I S E D M A R C H 1973 S IL E C T t T R A N S IS T O R S * D E S IG N E D F O R G E N E R A L PUR PO SE S A T U R A T E D S W IT C H IN G

Contextual Info: 2N 4123 NPN SILICO N IV IIC R O PLANAR EPITAX IA L bvebo C o lle cto r C utoff C urrent JCB0 Em itter Cutoff Current ^EBO Base-Em itter S aturation Voltage DC Current Gain SYMBOL BVCB0 bvceo MICRO FI F P T P O N ir^ I TH l\ V / lllV < 0 1 .1 V . MIN 40 30

hFE-200 to-92 npn

Abstract: 2N4123 2N4124 2N4125 2N4126
Contextual Info: 2N4123 _ 9N4194_ PHILIPS INTERNATIONAL SbE D • 711002b D042bb2 T3T ■ PHIN -= I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in pla stic T O -9 2 envelopes, p rim a rily intended fo r low -pow er, sm all-signal a u d io ­ fre qu e n cy a p p lica tio n s fo r consum er service.

2N3904

Abstract: ztx51 MPS3645 2N4401 2N4403 BC183P BC213P BCY59P BCY79P ZTX108
Contextual Info: PNP GENERAL PURPOSE TABLE 2 - continued Max Type V CBO V ceo Max 'c mA V h FE V c E s a t at lc mA mA 10 0 -5 Ib Min Max at Min fT at at Complement lc = 25°C lc mA MHz mA mW V V ZTX531 45 45 500 0 -7 BCY79P 45 45 200 0 -25 10 0 -25 120 460 ZTX213 45 30

transistor ZTX302

Abstract: ZTX502 transistor ztx304 BFS98 ZTX109 ZTX452 transistor MPSA06 transistor ZTX108 BC546P BC556P
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and O UTPUT ST A G ES, O SC ILLA TO RS, AND GENERAL PURPO SE

2N2222 MPS2222

Abstract: 2N3906 NPN switching transistor 2N4403 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P
Contextual Info: TABLE 3 : NPN SWITCHING Max V CE sat Min fT hFE V CEO Max 'c V mA BCY65EP 60 100 0.35 10 0.25 120 460 2 125 10 150 800 2 125 10 150 800 Type at Max. Switching Times at V at at •c Iß Min Max 'c 'c ^on mA mA mA MHz mA ns BCY59P 45 200 0.35 10 0.25 120 630

ZTX502

Abstract: BC17 MPS3645 BCY59P MPS3693 MPS3704 MPS3705 MPS6532 VC30 ZTX238
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type M P S 3704 \ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 M P S 3706 \ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P M P S 3709 \ ZTX3709 / M P S 371 0\ ZTX3710 /

BFS98

Abstract: MPS3645 2N3906 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

2N915

Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
Contextual Info: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:

2N39045

Abstract: 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2222A
Contextual Info: T A B L E 4 : P N P SW ITCHING M ax V CE satl Min h FE at Max. Sw itching Times at V C EO M ax 'c V mA M PS2907A 60 600 BCY77P 60 100 0 .2 5 10 0.25 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY65EP BCY79P 45 2 0 0 0 .2 5 10 0 .25 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY59P

Contextual Info: Lf5E D ITOS H ^0^7250 001775^ 0 TOSHIBA TRANSISTOR 2N4126 SILICON PNP EPITAXIAL TYPE PCT PROCESS 'T TOSHIBA (DISCRETE/OPTO) Unit in mm FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcBO=“50nA(Max.) @ VcB*-20V

ZTX109

Abstract: 2N5086 2N5087 2N5209 2N5210 BC550P BC560P BCY65EP BCY71P BCY77P
Contextual Info: TABLE 6 : PNP LOW NOISE The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. Type V CEO Max • Max VCE satl at 'c V h FE Min Max 'c 'c 'c

BC557P

Abstract: BFS60 ZTX304 MPS3645 MPS6566 ZTX551 BC182P BC546P BCY65EP BFS96
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

ZTX107

Abstract: ZTX108 ZTX452 BC546P BC556P BFS61 BFS98 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, AND GENERAL PURPOSE

ERF 2030

Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @10mA V Min. 1 II • m fT Ccb @ 10V - Typical 1 MHz Continuous Max. @ lc (mA) (MHz) Typical (Pp) ImA) 'F E b v ceo Device V CE(sat) Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a