2N3906 HIE Search Results

TRANSISTOR MARKING CODE R2A

Abstract: UMT3906 T3904 2N3906 MMST3906 SST3906 T106 T116 T146 Marking r2a
Contextual Info: UMT3906/SST3906/MMST3906/2N3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 / 2N3906 zExternal dimensions Unit : mm UMT3906 2.0±0.2 UMT3 SMT3 SST3 2.1±0.1 0 to 0.1 2.9±0.2 SST3906 2N3906 0.45±0.1 (2) (1) TO-92 0 to 0.1 0.2Min.

transistor 131 8D

Abstract: TRANSISTOR MARKING CODE R2A 2N3906 UMT3906 2n3906 hie 2n3906 transistors transistor 2n3906 2N3904 MMST3904 MMST3906
Contextual Info: UMT3906 / SST3906 / MMST3906 / 2N3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 / 2N3906 !External dimensions Units : mm !Features 1) BVCEO < -40V (IC=-1mA) 2) Complements the UMT3904 / SST3904 / MMST3904 / 2N3904. 2.0±0.2

TR 3906 PNP SM

Abstract: N3906 2N3906-G 2N3905
Contextual Info: NEC PNP SILICON TRANSISTORS ELECTRON DEVICE 2N3905,2N3906 GENERAL PURPOSE SW ITCHING AND AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR 2 DESCRIPTION The 2N 3905, 2N3906 are PNP transistors, designed for general purpose switching and amplifier application, feature

2N3906 APPLICATION

Abstract: 2N3906 hie 2N3906 tr 2n3906
Contextual Info: SEMICONDUCTOR 2N3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage

2N3906 CBE

Abstract: 2N3905 2N3906
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3905 2N3906 TO-92 CBE General Purpose Switching And Amplifier Applications ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified

transistor 2N3905

Abstract: 2N3906 hie 2n3906 ST 2n3904 transistor 2N3906 datasheet 2N3906 plastic 2n3906 equivalent transistor 2n3906 npn pin configuration NPN transistor 2n3906 transistor 2N3906
Contextual Info: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors ST 2N3903 and ST 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations.

transistor ST 2N3904

Abstract: ST 2n3904 TRANSISTOR PNP 2N3904 ST 2n3904 h 2n3904 2N3903 transistor 2n3903 2N3904 plastic ST 12 55C 2n3904 TRANSISTOR PNP
Contextual Info: ST 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors ST 2N3905 and ST 2N3906 are recommended. On special request, these transistors can be manufactured in different pin configurations.

2N3906 JEDEC

Abstract: 2N3906 2N3906 MOTOROLA 2n3906 equivalent 2N3905 2N3905 MOTOROLA 2N3906 OR EQUIVALENT 2N3906 APPLICATION 2N3905 Equivalent transistor 2N3905
Contextual Info: MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

2N3904

Abstract: transistor ST 2N3904 ST 2n3904 TRANSISTOR PNP h 2n3904 2N3903 ST 2n3904 transistor 2n3903 2N3903 transistor 2N3904 plastic 2N3904 equivalent
Contextual Info: ST 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors ST 2N3905 and ST 2N3906 are recommended. On special request, these transistors can be manufactured in different pin configurations.

2N3906-G

Abstract: 2N3906D 2N3906RL1 2N3906RLRA 2N3906RLRE 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906
Contextual Info: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 40 Vdc Collector − Base Voltage

2N3905 MOTOROLA

Abstract: 2N3906 motorola MMBT3906 sot-23 2N3905 Equivalent 728p model of 2n3906 1N916 2N3905 MMBT3906 MMPQ3906
Contextual Info: MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

pin configuration NPN transistor 2n3906

Abstract: 2N3904 2N3906 MMBT3906
Contextual Info: 2N3906 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor PNP TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications.

1N916

Abstract: 2N3904 2N3906
Contextual Info: SEMICONDUCTOR 2N3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES Low Leakage Current N : ICEX=-50nA Max. , IBL=-50nA(Max.) K @VCE=-30V, VEB=-3V. E G Excellent DC Current Gain Linearity.

2N3906 MOTOROLA

Abstract: 2n3906 REPLACEMENT 2n3906 TRANSISTOR REPLACEMENT BC237 equivalent transistor 2N1711 2N3905 Equivalent 2N1893 equivalent applications of Transistor BC108 BC141 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage

Contextual Info: SEMICONDUCTOR 2N3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage

2N3906RL1

Abstract: 2N3906RLRA 2N3906RLRM 2N3906RLRP 2N3906D 2N3906-G 2N3906 pin diagram 2N3906 JEDEC 2N3906 2N3906RL1G
Contextual Info: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 40 Vdc Collector − Base Voltage

marking CODE r1a

Abstract: 2N3904 transistor R1A R1A Marking npn SST3904 UMT3904 h 2n3904 Rohm umt3904 ic MARKING FZ MARKING 1F
Contextual Info: UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 ! Features ! External dim ensions Units : mm 1 ) B V ceo > 40V (Ic = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906. ! Package, marking and packaging specifications

2N3904

Abstract: 2N3906
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x = -50nA Max. , IBL=-50nA(Max.) @ VCe= -30V , V eb=-3V . • Excellent DC Current Gain Linearity.

ST 2n3904

Abstract: transistor ST 2N3904 2N3904 2N3904 hfe
Contextual Info: 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors ST 2N3905 and ST 2N3906 are recommended. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors ST 2N3903 and ST 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT 2N3906 SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.181 (4.6) 0.142(3.6) I* ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the NPN transistor 2N3904 is recommended.

2N304

Contextual Info: :» NPN SILICON PUNAR EPITAXIAL TRANSISTORS CASE T0-92A 2N3903, 2N3904 are NPN silicon planar epitaxial transistors designed for general purpose switching and amplifier applications. They are complementary to PNP types 2N3905 and 2N3906. I u EBC ABSOLUTE MAXIMUM RATINGS

C2N3906

Abstract: 2N3906D 2N3906RL1 2N3906RLRA 2N3906RLRE 2N3906RLRM 2N3906RLRP 2N3906ZL1 2N3906
Contextual Info: 2N3906 Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current – Continuous

all ic data

Abstract: 2N3906 T2N3906 2N3906 plastic
Contextual Info: 2N3906 Low Power Bipolar Transistors Features: • PNP Silicon Planar Switching Transistors. • General Purpose Switching and Amplifier Applications. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50