2N3773 ON Search Results

2N3773

Abstract: 2N6609 2N3773 NPN Audio Power AMP Transistor 2N3773 application 2N3773-D 2N3773 applications
Contextual Info: ON Semiconductort NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching

2N3773 NPN Audio Power AMP Transistor

Abstract: 2N6609 2N3773G 2NXXXX 2n3773 power transistor mex 2N3773 applications
Contextual Info: NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching

8 pin ic 3773

Abstract: 2N3773G 2N6609 2N3773 2NXXXX
Contextual Info: NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching

2N3773G

Abstract: 2N6099L
Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2N3773/2N6099 POWER TRANSISTOR COM PLEM EN T ARY SI LI CON T RAN SI ST ORS ̈ DESCRI PT I ON The UTC 2N3773/2N6099 are complement silicon power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power

Transistor 2n6099

Abstract: 2N3773 2N3773 transistor 2N3773 equivalent 2N6099 2N6609
Contextual Info: UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers,

motorola 2n6609

Abstract: 2N3773 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc

2N3773 equivalent

Abstract: 2N3773 2N3773 applications 2N3773 datasheets 2n3773 datasheet 2N6609
Contextual Info: SavantIC Semiconductor Product Specification 2N3773 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6609 ·High DC current gain ·Low saturation voltage ·High safe operating area APPLICATIONS ·Designed for high power audio, disk head

2n3773 power Amplifier

Abstract: 2N3773 CDIL 2N3773 2N6609
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications

2n3773 power Amplifier

Abstract: 2N3773 transistor 2n3773 2N6609
Contextual Info: Transys Electronics L I M I T E D 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

2N3773 MOTOROLA

Abstract: 2N6667 1N5825 2N3773 2N6387 2N6388 2N6609 2N6668 MSD6100 2N3773 applications
Contextual Info: MOTOROLA Order this document by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc

2n3773

Contextual Info: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.

2N3773

Abstract: 2N3773 transistor 2N3773 applications 2N3773 NPN Transistor 0015923C JESD97 transistor marking SUs
Contextual Info: 2N3773 High power NPN transistor Features • High power dissipation ■ Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications.

RCA-2N3773

Abstract: 2N6259 RCA 2N3773 2n3773 rca 2N4348 RCA 2n6259 2N4348 2n3773 power Amplifier 8a103 2N6259 amplifier
Contextual Info: 01 3875081 G E SOLID STATE uenerai-K urpose Kower iransisiuis» DE|3a?50ôl 01E 0017370 4 17370 d — 2N3773, 2N4348, 2N6259 High-Voltage, High-Current Power Transistors | T - 3 B ' /3 File Number 526 TERMINAL DESIGNATIONS Broadly Applicable Devices for Industrial and Commercial Use

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2N3773 Features • • NPN Silicon Power Transistors Used in power switching circuits such as relay or solenoid drivers

BT061S

Abstract: BDX50 GENTRON STH16018 MRF435 BDY77
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT ICBO Max ON) Min (Hz) (A) Max r (CE)sat Max (s) Max (Ohms) Tp.r Max (°C) Package Style D vices 20 Watts or More, (Cont'd) 5 10 BT061 BT061R BT061RS BT061S

BDX33C darlington pair

Abstract: 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* le a 1 .S A max. PT - 8.7S W m u . TO-391* A i t . AAi 9U X 9U lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max.

RCA 40411 transistor

Abstract: audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz . . . Ir to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W max. TO-39 * le * - 1 A MX. P j « 7 W max. (T O - » ) • ic ■ 2 A max. P j “ 10 f t max. (TO-39) ft 30 x 30* 30x30 2N2102 (N-P-N]

RCA 40411 transistor

Abstract: rca 40411 BUX18 transistor RCA 40872 audio amplifier with rca 40411 2n3283 RCA 40349 2N5320 transistor RCA 383 2n6354
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz . . . I r to 60 A . . . Pr to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A MX. P j « 7 W m ax . (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037 i c ■ 2 A m ax.

2n3054

Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
Contextual Info: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c ­ to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include

rca 40410

Abstract: rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C to 30 A . . •c pm k - 12 A lc = 10A Py =7 5 •100W Switching Linear 130 x 130 130 x 130 1 3 0 x 130 BU106 2N5840 [N-P-N] 2N 52 40 [N-P-N] BU106 2N5838 Va o sus =l40V VCER(sus) =275 V hFE = 20min. hFE.:8 ;" 0) /

2N5672

Abstract: 2n5038 complement complement of 2N3053 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N]

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

BU108

Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A

transistor 3569

Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —