2N3773 ON Search Results

2N3773 MOTOROLA

Abstract: MOTOROLA 2N3773 2N3773 2N3773 transistor motorola 2n6609 2N6609 2N3773 application 2N3773 NPN Audio Power AMP Transistor
Contextual Info: MOTOROLA Order this document by 2N3773/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can

2N3773

Abstract: 2N6609 2N3773 NPN Audio Power AMP Transistor 2N3773 application 2N3773-D 2N3773 applications
Contextual Info: ON Semiconductort NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching

2N3773 NPN Audio Power AMP Transistor

Abstract: 2N6609 2N3773G 2NXXXX 2n3773 power transistor mex 2N3773 applications
Contextual Info: NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3773 POWER TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS  DESCRIPTION The UTC 2N3773 are complement silicon power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching

Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA NPN 2N3773*, PNP 2N6609 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear

Contextual Info: UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers,

2N3773 transistor

Abstract: 2n3773
Contextual Info: UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers,

2N3773 NPN Audio Power AMP Transistor

Abstract: 2N3773 transistor 2N3773 C807
Contextual Info: 2N3773 NPN POWER TRANSISTORS 140 VOLTS 16 AMP, 150 WATTS The 2N3773 is a power transistor designed for high power audio, disk head positioners and other linear applications. The device can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications

2N3773 NPN Audio Power AMP Transistor

Abstract: CM1630 2N3773 transistor 2N3773 voltage regulator 2n3773 power Amplifier 2N3773 2N6609
Contextual Info: Ëk MOS PEC COMPLEMENTARY SILICON POWER TRANSISTORS The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners,linear amplifiers,switching regulators,solenoid drivers,and dc to dc converters or inverters. NPN

2N3773

Abstract: npn 855 2N6609
Contextual Info: Product Specification www.jmnic.com 2N3773 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6609 ・High DC current gain ・Low saturation voltage ・High safe operating area APPLICATIONS ・Designed for high power audio, disk head

2N6259

Abstract: 2n3773 2N3773A 2N4348 2N 6259 2n3773m
Contextual Info: Power Transistors File Number 526 2N3773, 2N4348, 2N6259 HARRIS SEMICOND SECTOR 27E D High-Voltage, High-Current Power Transistors Broadly Applicable Devices for Industrial and Commercial Use 43Ü5571 ÜGnaSM 3 « H A S T-33-I5 TERMINAL DESIGNATIONS T " I- 3

2N3773 equivalent

Abstract: 2N3773 2N3773 applications 2N3773 datasheets 2n3773 datasheet 2N6609
Contextual Info: SavantIC Semiconductor Product Specification 2N3773 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6609 ·High DC current gain ·Low saturation voltage ·High safe operating area APPLICATIONS ·Designed for high power audio, disk head

2n3773 power Amplifier

Abstract: 2N3773 CDIL 2N3773 2N6609
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications

Contextual Info: MOTOROLA Order this document by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 D arlington Silicon Pow er Transistors 2N 6667 2N 6668 . . designed for general-purpose amplifier and low speed switching applications. * High DC Current Gain — hpE = 3500 (Typ) @ Iq = 4 Adc

2N3773 NPN Transistor

Abstract: 2N3773 equivalent 2N3773
Contextual Info: DC COMPONENTS CO., LTD. 2N3773 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high power audio, disk head positioners, and other linear applications . TO-3 Pinning 1 = Base 2 = Emitter Case = Collector

2N3773 MOTOROLA

Abstract: 2N6667 1N5825 2N3773 2N6387 2N6388 2N6609 2N6668 MSD6100 2N3773 applications
Contextual Info: MOTOROLA Order this document by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2N3773 Features • • NPN Silicon Power Transistors Used in power switching circuits such as relay or solenoid drivers

2n3773 power Amplifier

Abstract: 2N3055 hfe 2n3055 2n3055 complement 2N1482 2N3054 2N344 2N5298 2N5786 2N6478
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* A it . . A A i 9U X 9U lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.

complement of 2N3053

Abstract: 2N3283 npn 40411 2N3773 regulator 40411 2n377 40375 40852 coil 2N3053 2N2102
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . Ir to 60 A . . . Pr to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0

Ultrasonic amplifier 50w

Abstract: 2n377 2n3773 power Amplifier BDY29 BDY37 2N1482 2N3054 2N344 2N5298 2N5786
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

2N3065

Abstract: FT08 2N3064 BD278A N6038 2N3442 2n1482 2n3771 BDY29 2N3054
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V c E to 170 V H O M ETA X IA L-B A S E N-P-N POWER T Y P E S <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . A A i 9U X 9U le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* lc » 3 .S A m ax. P y « 10 W m ax. (TO-391*

2N3773 equivalent

Abstract: transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772
Contextual Info: pia E>iy <mr /a u m ® C o n tr a n Devices. Inc MEDIUM VOLTAGE CHIP NUMBER NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 31) CONTACT METALLIZATION Base. Emitter and Collector Solder Coated 95/5% lead/tin. ASSEM BLY RECOMMENDATIONS It is advisable that: