2N3772 APPLICATIONS Search Results

2N3772

Abstract: 2N3771 2N3772 APPLICATIONS 2N3771 canada 20A40
Contextual Info: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications.

2N3772

Contextual Info: UTC 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3772 is a power-base power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications. TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified

Contextual Info: rz 7 ^7# SGS-m0MS0N 2N3771 [ïfflOeœilLHera «® 2N3772 HIGH POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear

2N3771

Abstract: 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771
Contextual Info: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. *ON Semiconductor Preferred Device 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON

transistor 2n3772

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications.

2N3772

Contextual Info: Transys Electronics L I M I T E D 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage

diode cc 3053

Abstract: cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT 2n3771 2N3772 K 3053 TRANSISTOR MIL-PRF19500
Contextual Info: This documentation process conversion measures necessary to comply with this revision shall be completed by 30 September 1999 INCH-POUND MIL-PRF-19500/413C 30 July 1999 SUPERSEDING MIL-S-19500/413B 24 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

2N3055 series voltage regulator

Abstract: 2n3055 voltage regulator circuit diagram of 2N3055 series voltage regulator 2n3055 regulator 10a 2N3055 power supply circuit terminals of 2n3055 2N3055 power amplifier circuit pin configuration transistor 2n3055 NPN Transistor 2N3055 darlington positive negative voltage regulator variable
Contextual Info: National Semiconductor Application Note 82 May 1974 INTRODUCTION The LM125 is a precision, dual, tracking, monolithic voltage regulator. It provides separate positive and negative regulated outputs, thus simplifying dual power supply designs. Operation requires few or no external components depending on the application. Internal settings provide fixed output

2n3054

Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
Contextual Info: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c ­ to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include

70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Contextual Info: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919

DF1084

Abstract: AM 5766 transistor df1084 driver AM 5766 coil 2N3053 Germanium audio Amplifier diagram 2.5W AUDIO AMPLIFIER CIRCUIT DIAGRAM transistors transistor intercom circuit audio amplifier class A schematic AN5766
Contextual Info: [ /Title AN57 66 /Subject (Application Of The Ca302 0 And Ca302 0a Multipurpose Wideband Power Amplifiers) /Autho r () /Keywords (Intersil Corporation, Semiconductor, wideband power amplifier, wide band power Application Of The CA3020 And CA3020A Multipurpose Wide-band Power Amplifiers

K500100-3B

Abstract: national an-2 switching regulator 2n2905 replacement Widlar Regulator LM100 AN-2 ferroxcube K5-001-00/3B lm104 h 6906 isc 2n3055 transistor Widlar AN-1
Contextual Info: National Semiconductor Application Note 23 January 1969 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico introduction IC voltage regulators are seeing rapidly increasing usage The LM100 one of the first has already been widely accepted Designed for versatility this circuit can be used as a

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

BU108

Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

BU108

Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc

2SC1419

Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.

Motorola case 77

Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc

2SA1046

Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MJ15003 300 watts amplifier

Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications

TIP35C transistor replacement

Abstract: TIP35C replacement 2N3055 equivalent BU108 D45H11 equivalent replacement BDX54 2n3772 EQUIVALENT BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V

pin configuration NPN transistor tip41c

Abstract: TIP41C EQUIVALENT TRANSISTOR tip41c pin configuration pin configuration NPN transistor tip42c TIP42C EQUIVALENT BU108 All similar transistor 2sa715 2SA699 TIP41A semiconductors TIP42A equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP41A TIP41B* TIP41C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. PNP • Collector–Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc

BU108

Abstract: ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A

2SA1046

Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS