2N3507A
|
|
Defense Supply Center Columbus
|
NPN Silicon Switching Transistor |
Original |
PDF
|
100.41KB |
14 |
2N3507A
|
|
Semico
|
Silicon NPN Transistor |
Original |
PDF
|
199.31KB |
2 |
2N3507AJ
|
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 50 Vcbo (V) = 80 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 150 VCE(sat) (V) = 1.00 |
Original |
PDF
|
199.33KB |
2 |
2N3507AJS
|
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 50 Vcbo (V) = 80 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 150 VCE(sat) (V) = 1.00 |
Original |
PDF
|
199.33KB |
2 |
2N3507AJV
|
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 50 Vcbo (V) = 80 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 150 VCE(sat) (V) = 1.00 |
Original |
PDF
|
199.33KB |
2 |
2N3507AJX
|
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 50 Vcbo (V) = 80 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 150 VCE(sat) (V) = 1.00 |
Original |
PDF
|
199.33KB |
2 |
2N3507AL
|
|
Defense Supply Center Columbus
|
NPN Silicon Switching Transistor |
Original |
PDF
|
100.41KB |
14 |
2N3507AL
|
|
Microsemi
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - NPN POWER SILICON TRANSISTORS |
Original |
PDF
|
274.83KB |
|
2N3507AL
|
|
Semico
|
Silicon NPN Transistor |
Original |
PDF
|
203.44KB |
2 |
2N3507ALJ
|
|
Semico
|
Package = TO-5 Level = Jans Vceo (V) = 50 Vcbo (V) = 80 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 150 VCE(sat) (V) = 1.00 |
Original |
PDF
|
203.46KB |
2 |
2N3507ALJS
|
|
Semico
|
Package = TO-5 Level = Jans Vceo (V) = 50 Vcbo (V) = 80 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 150 VCE(sat) (V) = 1.00 |
Original |
PDF
|
203.46KB |
2 |
2N3507ALJX
|
|
Semico
|
Package = TO-5 Level = Jans Vceo (V) = 50 Vcbo (V) = 80 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 150 VCE(sat) (V) = 1.00 |
Original |
PDF
|
203.46KB |
2 |