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2N3501J
|
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Semico
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Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 |
Original |
PDF
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208.45KB |
2 |
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2N3501JAN
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Motorola
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Bipolar Transistor, NPN Silicon Small Signal Transistor |
Original |
PDF
|
398.25KB |
4 |
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2N3501JAN
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New England Semiconductor
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NPN SILICON TRANSISTOR |
Original |
PDF
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59.06KB |
2 |
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2N3501JANS
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Motorola
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Bipolar Transistor, NPN Silicon Small Signal Transistor |
Original |
PDF
|
398.25KB |
4 |
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2N3501JANTXV
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New England Semiconductor
|
NPN SILICON TRANSISTOR |
Original |
PDF
|
59.06KB |
2 |
|
2N3501JS
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|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 |
Original |
PDF
|
208.45KB |
2 |
|
2N3501JTX
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Motorola
|
Bipolar Transistor, NPN Silicon Small Signal Transistor |
Original |
PDF
|
398.25KB |
4 |
|
2N3501JTXV
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|
Motorola
|
Bipolar Transistor, NPN Silicon Small Signal Transistor |
Original |
PDF
|
398.25KB |
4 |
|
2N3501JV
|
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 |
Original |
PDF
|
208.45KB |
2 |
|
2N3501JX
|
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 |
Original |
PDF
|
208.45KB |
2 |