2N2905 ACC Search Results

2n2905 2n2907

Abstract: 2n2907 2N2905 equivalent 2N2905 st 2n2907 to-18 ST 2N2905 transistor 2N2905 2N2905 transistor 2N2907 PNP Transistor 2N2907 application notes
Contextual Info: 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 for 2N2905 and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose application.

transistor 2N2905

Abstract: 2N2906 equivalent 2n2907 2N2904 2N2905 equivalent 2N2905 transistor 2N2905 data sheet transistor 2n2907 2n2907 metal can equivalent 2n2906
Contextual Info: 2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO39 for 2N2904, 2N2905 and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are designed for high-speed saturated switching and general purpose applications.

st 2n2907 to-18

Abstract: P008B 2N2904 2n2905 ST
Contextual Info: SGS-THOMSON RaDSMULKEin^OMlDei 2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N2904, 2N2905, 2N2906 and 2N2907 are si­ licon planar epitaxial PNP transistors in Jedec TO39 for 2N2904, 2N2905 and in Jedec TO-18 (for

2n2905

Abstract: 2N2905A 2N2905 equivalent transistor 2N2905 2N2905 transistor 2N2905a equivalent ST 2N2905 of 2n2905 PNP 2N2905
Contextual Info: PNP 2N2905 – 2N2905A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 metal case . They are intended for high speed switching and general purpose applications. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol

2n2905 configuration

Abstract: 2N2905 equivalent TRANSISTOR 2n2904 transistor 2N2905 2N2904 PNP Transistor 2N2905 transistor 2N2905 2n2905 configuration circuit and description 2N2904
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION

2N2905

Abstract: TRANSISTOR 2n2905 2n2219a npn transistor 2N2219 2N2219A 2N2905A ST 2N2905 2n2905 philips 2N2905 2N2219 2N2905 2N2219 application
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2905; 2N2905A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification PNP switching transistors

2N2905

Abstract: 2n2905a 2N2905 2N2219 transistor 2N2905 2N2905 NPN transistor
Contextual Info: Philips Semiconductors Product specification PNP switching transistors FEATURES 2N2905; 2N2905A PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • High-speed switching

2N2905

Abstract: 2n2905 configuration 2N2904 application notes 2N2905 equivalent 2N2904
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

2n2905

Abstract: 2N2904 2n2905 configuration 2n2904 2n2905
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

2n2905

Contextual Info: 2N2905 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: i, fine. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N2905 TO-39 2W2905 are PNP silicon planar epitaxial transistors. It is intended for driver stage of power amplifiers and switching applications.

of 2n2905

Abstract: 2N2905 equivalent 2N2905 transistor transistor 2N2905 2N2905
Contextual Info: 2N2905 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N2905 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2n2905 configuration

Abstract: 2N2905
Contextual Info: 2N2905 Low Power Bipolar Transistors Features: • PNP Silicon Planar switching Transistors. • General Purpose Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33

Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package Switching And Linear Application DC VHF Amplifiers Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N2905 equivalent

Abstract: 2N2905a equivalent 2N2905 2N2904 2N2905A 2n2905a jantx 2N2904A equivalent transistor 2N2905 transistor 2N2905 2N2905 transistor
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SWITCHING SILICON TRANSISTOR

2N2905

Abstract: 2N2905 equivalent 2N2905 transistor TRANSISTOR 2n2904 2N2905a equivalent 2N2904 PNP Transistor 2n2905a jantx 2N2904 2N2904A 2N2904AL
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 11 November 2010. INCH-POUND MIL-PRF-19500/290N 20 September 2010 SUPERSEDING MIL-PRF-19500/290M 27 May 2009 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES, 2N2904,

equivalent transistor 2N2905

Abstract: 2N2905a equivalent 2N2905 2n2905a jantx TRANSISTOR 2n2904 transistor 2N2905 2N2904 2N2904A 2N2904AL 2N2905A
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 27 April, 2004. MIL-PRF-19500/290K 27 February 2004 SUPERSEDING MIL-PRF-19500/290J 3 July 2002 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N2904,

2n2907 Motorola

Abstract: motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application 2N2907
Contextual Info: MOTOROLA 2N2904A* thru 2N2907,A* PNP Silicon Annular Hermetic Transistors Designed for high–speed switching circuits, DC to VHF amplifier applications and complementary circuitry. COLLECTOR 3 • High DC Current Gain Specified — 0.1 to 500 mAdc • High Current–Gain — Bandwidth Product —

Contextual Info: N AMER PHILIPS/DISCRETE h lE » bb53^31 0058121 855 2N29 U S 2N2905A APX A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes designed primarily for high-speed switching and driver applications for industrial service. QUICK REFERENCE DATA

Contextual Info: Final Electrical Specifications LT1460S3-3.3 SOT-23 3.3V Micropower Series Reference in SOT-23 July 1999 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 3-Lead SOT-23 Package Low Drift: 20ppm/°C Max High Accuracy: 0.2% Max Low Supply Current: 180µA Max

LT1460

Abstract: LT1460HCS3-10 LT1460JCS3-10 LT1460KCS3-10 sot-23 Marking c1 3V REGULATOR SOT-23 precision 0 to 100ma current source
Contextual Info: Final Electrical Specifications LT1460S3-10 SOT-23 10V Micropower Series Reference in SOT-23 July 1999 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 3-Lead SOT-23 Package Low Drift: 20ppm/°C Max High Accuracy: 0.2% Max Low Supply Current: 270µA Max