2N2369A Search Results

Contextual Info: 2N2369A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2369AJ

2N2369AU

Contextual Info: 2N2369AUB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corpoation offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2369AUBJ

MSCQ2

Abstract: t 317 transistor
Contextual Info: Microsemi W ntertown, M A 0Î172 PH: S17 S26-0404. F A X <617) #24-1235 2N2369A Features 40 Volts 200mAmps • Meats MIL-S-19500/317 • Iiolector-Sase Voftage 40V • (Jollector Current 200 mA • I-ast Switching 3 0 nS NPN BIPOLAR TRANSISTOR Maximum Ratings

Contextual Info: 2N2369A w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2369A is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE

Contextual Info: NPN SWITCHING TRANSISTOR 2N2369ACSM • Silicon Planer Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2n2369

Contextual Info: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred Device 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO

2N2369A

Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2369A Features • • • • 40 Volts 200mAmps Meets MIL-S-19500/317 Collector-Base Voltage 40V Collector Current: 200 mA Fast Switching 30 nS NPN BIPOLAR TRANSISTOR Maximum Ratings

C146C

Abstract: 2N2369A 3v912
Contextual Info: 2N2369A MECHANICAL DATA Dimensions in mm inches HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) 4 .9 5 (0 .1 9 5 )

2N2222 - to-92

Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
Contextual Info: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124

2N2369A

Contextual Info: SGS-THOMSON G W i« ! » « ! 2N2369A HIGH-SPEED SATURATED SW ITCH D E S C R IP T IO N The 2N2369A is a silicon planar epitaxial NPN tran­ sistor in JedecTO -18 metal case. It is designed spe­ cifically for high-speed saturated switching applica­ tions at current levels from 100 |iA to 100 mA.

Contextual Info: Illl = ^ = Illl SEME 2N2369ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES 0.51 ±0.10 (0.02 ±0.004)

2N2369A

Abstract: 2N2369AUBC 2N2369AU 2N4449 2N2369AUA 2N2369AUB C545C 317 TRANSISTOR
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 DEVICES LEVELS 2N2369A 2N2369AU 2N2369AUA 2N2369AUB 2N2369AUBC *

Contextual Info: N AUER PHILIPS/DISCRETE bTE J> m bbSB'lBl DDEfiOT? ?Qb « A P X 2N2369A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope prim arily intended for high-speed saturated switching and high frequency am plifier applications. Q U IC K R E F E R E N C E D A T A

J 2N2369

Abstract: 2N2369 2N2369A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.

2N2369A

Abstract: 2N4449 2N2369AU 2N4449UB 2N2369AUA 2N2369AUB 2N4449U 2N4449UA
Contextual Info: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices 2N2369A 2N2369AU 2N2369AUA 2N2369AUB Qualified Level 2N4449 2N4449U 2N4449UA 2N4449UB JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage

2n2369a

Abstract: uA 741 IC OF IC 741 TO206AB
Contextual Info: TECHNICAL DATA MIL-PRF 2N2369A, U, UA, JAN, JTX, JTXV 2N2369AUB JAN, JTX, JTXV 2N4449, U, UA, JAN, JTX, JTXV QML DEVICES Processed per MIL-PRF-19500/317 NPN SWITCHING SILICON TRANSISTORS 2N2369A 2N4449 TO-18 TO-206AA TO-46 (TO-206AB) MAXIMUM RATINGS Ratings

2N2369

Abstract: 2N2369A 2N2369A MOTOROLA 2N2369 motorola 2N2369 equivalent 2N2369 datasheet input impedance of 2N2369 data sheet J 2N2369 motorola 2n2369 1N916
Contextual Info: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors 2N2369 2N2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15

2N2369A

Abstract: ASE 12 66 2N2369A THOMSON
Contextual Info: 2N2369A HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N2369A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. TO-18

TS 4140

Abstract: 2N2369ADCSM
Contextual Info: DUAL NPN SWITCHING TRANSISTORS 2N2369ADCSM • Dual Silicon Planer Epitaxial NPN Transistors • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

ts 4141 TRANSISTOR

Contextual Info: NPN SWITCHING TRANSISTOR 2N2369ACSM • Silicon Planer Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2N2369A

Abstract: 2n2369a philips TU-T2
Contextual Info: N AMER PHILIPS/DISCRETE bTE bbSBTBl DDEÔDT? ?Db WM APX 11 2N2369A | i SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope primarily intended for high-speed saturated switching and high frequency amplifier applications. QUICK REFERENCE DATA

Contextual Info: High Speed Metal Can Transistors VCEO Part No. Polarity 2N2369 2N2369A NPN 2N708 2N3467 20070515 PNP sust Min. (V) toff @ Ic ton Max. Max. Ic Bipolar Transistors hFE @ IC VCE(sat) @ IC & IB Max. IC PD fT Package @ Min. IB 25°C (mA) (MHz) (mW) Bulk (ns)

Contextual Info: 2N2369A+JANS Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)400nx @V(CBO) (V) (Test Condition)20

2N2369

Abstract: J 2N2369 2N2369A
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.