2N 2369 A Search Results

2N 2222 A NPN, TO-18

Abstract: 2N2222 2n h 2222a 2222a NPN 706a 709a 2N708 2N709 2N753 2222 NPN
Contextual Info: à a.UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A

TT 2222 npn

Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
Contextual Info: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904

2222 NPN

Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
Contextual Info: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905

J 2N2369

Abstract: 2N2369
Contextual Info: 2369 HIGH-FREQUENCY SATURATED SWITCH The 2N 2369 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed specifically fo r high-speed saturated switching applications at current levels from 100 juA to 100 mA. ABSOLUTE MAXIMUM RATINGS

N2369

Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
Contextual Info: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12

2369 transistor

Abstract: 2369
Contextual Info: 2N 2369 SILICON PLANAR NPN HIG H-FREQUENCY SATURATED SWITCH Th e 2 N 2 3 6 9 is a sil con p lanar ep ita x ia l N P N tran sistor in Jedec T O - 1 8 m etal case. It is designed sp ecifically to r high-speed saturated sw itch ing ap p lic atio n s a t c u rre n t levels fro m

2n2369

Abstract: 2N2368 2369 2n 2368 2n 2369 2368
Contextual Info: * 2 N 2368 * 2 N 2369 NPN S IL IC O N T R A N S IS T O R S , E P IT A X IA L T R A N S IS T O R S N P N S IL IC IU M , E P IT A X IA U X îfc Preferred device D ispositif recommandé - H F small signal amplification Amplification H F petits signaux Low current fast switching

2369

Abstract: T018 T072 PN2368 NKT13329 13429 16229
Contextual Info: NPN Silicon Transistors N P N S ilic o n Planar T ransistors fo r high speed sw itching and high fre q u e n cy use Type M a x im u m ratings Case BSY 95A T018 T018 T018 T018 N K T 13329 N K T 13429 N K T 16229 PN 918 PN 2368 PN 2369 T018 T018 T072 Plastic T 0 1 8

bc 301 transistor

Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP

2907A EQUIVALENT

Abstract: 2222A 2907 transistor 4393 s0918 BFQ22 equivalent a 2907 SOR2369 S02907 bfr93
Contextual Info: m icropackaged transistors according to CNET specifications transistors en microboitier selon spécification CN ET Réf. C N E T Standard catalog product Produit catalogue standard TCH 918.3 TCH 918.5 SO R 918 S0 9 1 8 2N918 2N 918 TCH 2222.3 TCH 2222.5 S O R 2222

2N2369

Abstract: 2N2369A 2369 transistor 2369A 2N 2369 A
Contextual Info: 2 W 2369 A NPN S ILIC O N T R A N S IS T O R , E P IT A X IA L TR A N S IS T O R NPN S IL IC IU M , E P IT A X IA L - H F small signal amplification A m plification H F petits signaux - Low current fast switching Commutation rapide faible courant v CEO 15

TRANSISTOR BC 313

Abstract: npn 2222 transistor transistor 2n 2222 2907 TRANSISTOR PNP NPN 2904 BSW21 2n 2222 transistor bc 107 transistor BCY 107 2907 pnp transistor
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r M ETAL-CASE/ BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC EO ^ \^ PNP PNP

BC-337 B 011

Abstract: BC 195 TRANSISTORS transistors BC 23 SO2221R BC-338 B 011 SO2484R BC 930 222-1 2221 bc 107 silicon equivalent
Contextual Info: A C T IV E COMPONENTS FOR H Y B R ID CIRCU ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES ê CB-166 SOT-23 Silicon NPN transistors, switching and general purpose Marl ing Mart,tuage Type Type N R . Pin conf. Brochage Transistors NPN silicium, usage générai et commutation

TRANSISTOR BC 313

Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V

bc 107 transistor

Abstract: transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF M ETAL-CASE/ BOITIER M E T A L Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC E O ^ \^ PNP

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

BC211

Abstract: BC 650 NPN BSV16 2N706 BFY50 BFY51 BFY52 BSX45 BSX46 BSY51
Contextual Info: general purpose, amplification, switching - metal case commutation, am plification, usage général boîtier métal Type NPN M axim um ratings PNP p to t C haracteristics a t 25°C VcEO / •»21E VCE satl / / «e / 50 50 50 50 25 25 30 30 850 850 650 650

Contextual Info: ACTIVE COM PONENTS FO R HYBRID CIRC U ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES Silicon IMPN tran sisto rs, low noise chip Transistors NPN silicium, faible bruit (pastille) Type Typ.9 VCBO (V) VCEO (V) h21E 'c ' (mA) *C V CE (V) (mA) F (dB) min - max

BSX39

Abstract: BSX29 BSX26 IC 4013 transistor BSX26 2n3013 BSX28 bsx20 bsx39
Contextual Info: nrz SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL Ä 7 # K ÄÖ 8 IILI O T® !M 0(gS SMALL SIGNAL TRANSISTORS NPN TRANSISTORS FOR FAST AND ULTRA FAST SWITCHING vCEO hpE min/max C? Type (mA (V) vCE(sat) max ICrtB (V) (mA) »T min (MHz) 0.25 0.4 30/3 0.7 0.6 10/1

IC 4047

Abstract: N2219 ic 4046 bsw830 BSW82 N 2222 N2222A BSW83 2N3301 2N3302
Contextual Info: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 5C 0mA) in TO-18 and TO-39 (~ T O - 5 ) metal cases for high speed switching Type Characteristics @ Tam b= 25°C Maximum Ratings f" l„ Tam b— ff 2 5 °C Tease— V CE = 10 V = 10 mA

2N2475

Abstract: BFS36 BFS38 BFS46 BFS41 2N2605 2N930 BFS36A BFS42 BFS38A
Contextual Info: M ICRO-E CHARACTERISTICS AT 25°C p-n - -P n -p - n l\/l C I'M1U 1IPIV V/1I CURRENT GENERAL PURPOSE IVI tU TRANSISTORS Parameter BFS38A M in. Test Conditions M in. 25 - - 35 v CBO Rated Max. - VCEO sus l c = 5mA, Iß —0 25 v EBCi Rated Max. - 5 >CBO V c b = V c b O f*atec* ^ ax' ^E= 0

boitier to 126

Abstract: l14oc BF 914 2n 693 2N706 ESM 470
Contextual Info: Silicon PNP transistors, video high voltage Tamb = 25 0C Transistors PNP silicium , haute tension vidéo v CËO <V Case V C E sa t V ) fT (MHz/ T S i 76 min Page max <c / I b (m A ) - 10 - 0 ,5 50/5 100 # - 10 - 0 ,5 50/5 100 # 30 - 25 - 0 ,5 -5 /1 70 §

BEL 100N TRANSISTOR

Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
Contextual Info: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-116 PACKAGE T O -116 14 PIN C E R A M IC D IP yp i* T O -116 w 11 f VcEO sus VOLTS Ic (m ax) AM PS hfE @ V ^ ce m in/m ax @ m A /V VcE(sat) @ Ic^B V @ m A /inA C <£P P (M H z) 2N 6987 60 .6 100/300@ 150/10