2K X 4 RAM Search Results

Contextual Info: SH66P51 OTP 2K 4-bit Micro-controller with LCD Driver Features „ SH6610C-based single-chip 4-bit micro-controller „ OTP ROM: 2K X 16 bits „ RAM: 128 X 4 bits Data RAM „ Operation voltage: 1.8V - 3.6V (Typically 3.0V) „ 18 CMOS bi-directional I/O pins

Contextual Info: IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4-m eg ab it 5 1 2K x 8 Static RA M module Th e ID T 7 M B 404 8 is a 4-m eg ab it (5 1 2K x 8) Static RAM module constructed on a multilayer epoxy lam inate (F R -4)

ETL9344

Abstract: l9445 ETL9444 ETL9445 7 bit shift register 2097MHz
Contextual Info: ETL9444/ETL9445 ETL9344/ETL9345 4-BIT NMOS MICROCONTROLLERS . . . . . . . . . . . . . LOW COST POWERFUL INSTRUCTION SET 2k x 8 ROM, 128 x 4 RAM 23 I/O LINES ETL9444 TRUE VECTORED INTERRUPT, PLUS RESTART THREE-LEVEL SUBROUTINE STACK 16µs INSTRUCTION TIME

ETL9344

Abstract: l9445 ETL9444 ETL9445
Contextual Info: ETL9444/ETL9445 ETL9344/ETL9345 4-BIT NMOS MICROCONTROLLERS . . . . . . . . . . . . . LOW COST POWERFUL INSTRUCTION SET 2k x 8 ROM, 128 x 4 RAM 23 I/O LINES ETL9444 TRUE VECTORED INTERRUPT, PLUS RESTART THREE-LEVEL SUBROUTINE STACK 16µs INSTRUCTION TIME

Contextual Info: SH66L16 16K 4-bit Microcontroller with LCD Driver Features SH6610C-based single-chip 4-bit microcontroller with LCD driver ROM: 16K X 16 bits bank switched RAM: 2K X 4 bits (system control register, bank switched data memory & LCD RAM) Operation Voltage Range: 1.2V - 1.7V

33dh

Abstract: reliability VP5 329H 332h 339H SEGMENT DISPLAY 312H btm 180 316H
Contextual Info: SH66L16 16K 4-bit Microcontroller with LCD Driver Features „ SH6610C-based single-chip 4-bit microcontroller with LCD driver „ ROM: 16K X 16 bits bank switched „ RAM: 2K X 4 bits (system control register, bank switched data memory & LCD RAM) „ Operation Voltage Range: 1.2V - 1.7V

fr 3709 z

Abstract: fr 3709
Contextual Info: IDT7MP41 35 PRELIMINARY 5 1 2K x 32 CM OS STATIC RAM M OD UL E FEATURES DESCRIPTION • • • • The IDT7M P4135 is a 512K x 32 Static RAM module constructed on an epoxy lam inate FR-4 substrate using 4 512K x 8 Static RAM s in plastic packages. The availability of

C4516

Contextual Info: fC4sn: m u/yu Revision: 1/4/91 CY7C4S1 CY7C453 PRELIMINARY CYPRESS SEMICONDUCTOR Cascadeable Clocked 512 x 9 and Cascadeable Clocked 2K x 9 FIFOs with Programmable Flags Features Functional Description • 512 x 9 CY7C451 and 2,04« x 9 (CY7C453) FIFO buffer memory

ba6l

Abstract: BA5L BA4L
Contextual Info: HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 128K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 36 banks – 4 megabits of memory on chip

bt 33 f

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM 3.3 V, 2k-refresh HYB 3117400BJ/BT -50/-60/-70 Prelim inary Inform ation 4 194 304 words by 4-bit organization 0 to 70 ‘C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)

BT 199

Abstract: jyy4
Contextual Info: SIEM ENS 4M X 4-Bit Dynamic RAM 3.3 V, 2k-refresh HYB 3117400BJ/BT -50/-60/-70 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)

5117405BJ-50

Contextual Info: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

14241

Abstract: TO63 package CY7C4201 CY7C4211 CY7C4221 CY7C4231 CY7C4241 CY7C4251 CY7C42X1 CY7C4421
Contextual Info: fax id: 5409 •>* : CY7C4421/4201 /4211/4221 CY7C4231/4241/4251 .6 4 /2 5 6 /5 1 2 /1 K /2K /4K /8K x 9 S ynch ro no us FIFO s Functional Description Features • High-speed, low-power, first-in, first-out FIFO memories • 6 4 x 9 (CY7C4421) • 256 x 9 (CY7C4201)

Contextual Info: -P R E L IM I N A R Y July 1996 Edition 1.0 FUJITSU PRO DUCT PROFILE SHEET MB81117422A-125/-100/-84/-67 [2K Refresh] CMOS 2 X 2M X 4 SYNCHRONOUS DRAM CMOS 2 BANKS OF 2,097,152-WORDS x 4-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81117422A is a CMOS Synchronous Dynamic Random Access Memory

CY7C4801

Abstract: CY7C4811 CY7C4821 CY7C4831 CY7C4841 CY7C4851 IDT72801 QA08 IDT728X1
Contextual Info: 4831/4 CY7C4801/4811/4821 CY7C4831/4841/4851 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs Features • Double high speed, low power, first-in first-out FIFO memories • Double 256 x 9 (CY7C4801) • Double 512 x 9 (CY7C4811) • Double 1K x 9 (CY7C4821)

Contextual Info: S IE M E N S 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405B J/BT-50/-60 HYB5117405B J/BT-50/-60 HYB3116405BJ( L)/BT(L)-50/-60 HYB3117405BJ( L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

CY7C4421V

Abstract: CY7C4201V CY7C4211V CY7C4221V CY7C4231V CY7C4241V CY7C4251V 256-H
Contextual Info: fax id: 5418 1CY 7C42 31 V/4 24 1V /4 25 1V CY7C4421V/4201V/4211V/4221V PRELIMINARY CY7C4231V/4241V/4251V Low Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs • 32-pin PLCC Features • High-speed, low-power, first-in, first-out FIFO memories • 64 x 9 (CY7C4421V)

Contextual Info: böE » • 4S2S771 00144*11 20T ■ 512Kx8 IDT IDT7M4048 CMOS STATIC RAM MODULE INTEGRATED DEVICE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit C M O S Static RA M module T h e ID T 7 M 4 0 4 8 is a 4 megabit 5 1 2K x 8 C M O S Static

Contextual Info: DS1216B DALLAS SEMICONDUCTOR FEATURES DS1216B SmartWatch/RAM 16K/64K PIN ASSIGNMENT • Keeps track of hundredths of seconds, seconds, m in­ utes, hours, days, date of the month, months, and years 1 28 Vcc 2 27 WE 3 26 Vcc 4 25 RST • Converts standard 2K x 8 and 8K x 8 CM OS static

simm 72pin

Abstract: HMD8M32M16EBG marking A11
Contextual Info: HANBit HMD8M32M16EBG 32Mbyte 8Mx32 72-pin EDO MODE 2K Ref. SIMM Design 5V Part No. HMD8M32M16EBG GENERAL DESCRIPTION The HMD8M32M16EBG is a 8M x 32bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAMs in 24-pin SOJ packages mounted on a 72-pin, double-sided, FR-4-printed circuit board.

B1043

Abstract: 162PIN
Contextual Info: IL INTEGRATE] DEVICE 3flE D • 4Ô25771 DOOb^MB 2 ■ _ T - % - 2.3- 12. 4K x 16 2K x 16 CMOS FourPort RAM MODULE IDT PRELIMINARY IDT7MB1043 IDT7MB1044 In tegrated D evice T ech n o lo g y , Inc. FEATURES: DESCRIPTION: • High density 64K /32K C M O S FourPort RAM Modules

HMD8M32M16EG

Contextual Info: HANBit HMD8M32M16EG 32Mbyte 8Mx32 72-pin EDO MODE 2K Ref. SIMM Design 5V Part No. HMD8M32M16EG GENERAL DESCRIPTION The HMD8M32M16EG is a 8M x 32bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAMs in 24-pin SOJ packages mounted on a 72-pin, double-sided, FR-4-printed circuit board.

Contextual Info: Order this document by MCM417400B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M X 4 Advance Information 16M CMOS Dynamic RAM Family Fast Page Mode x4 2K Refresh MCM417400B Fast Page Mode 2048 Cycle Refresh The family of 16M dynamic RAMs is fabricated using sub-m icron CMOS

Contextual Info: fax id: 5408 CY7C455 CY7C456 CY7C457 CYPRESS 512 x 18, 1K x 18, and 2K x 18 Cascadable PRELIMINARY ¿¡¡P: Clocked FIFOs with Programmable Flags Functional Description Features T he C Y 7C 455, C Y 7 C 4 56, and C Y 7 C 4 57 are high-speed, low-power, first-in first-out FIFO m em ories w ith clocked read