2F CHIP TRANSISTOR Search Results

GSC371BAL2000

Contextual Info: HIGH POWER CHIP BALUN •Compact & High power handling. A "9 - W I S I T o •For Push-Pull ended power transistor. • 7 'V V I ^U 0 S S lca@ T ;T o •GSC-BAL series •Adjustment - free. Frequency Type Allowable Power [MHz] GSC184-BAL0600 120W 470-860 GSC172-BAL0800

24v dc motor drive circuit diagram

Abstract: transistor current booster circuit AT5801 GVC134 J-STD-020A QFP44 QFP-44 VOO134
Contextual Info: AT5801 4-Channel Motor driver for Portable CD Player Features ˙Built-in 4 channels H-bridge drivers. ˙DC/DC converter control circuit on a chip. ˙With reset output inversion circuit. ˙Battery charging circuit on Chip. ˙Built-in thermal shutdown protection.

lg controller circuit diagram

Abstract: 470PF AT5802 J-STD-020A QFP44 QFP-44 CT-07V circuit diagram of power supply section of lg 15
Contextual Info: AT5802 Preliminary 4-Channel driver + Power Controller Features ✁ ✁ ✁ ✁ ✁ ✁ ✁ ✁ ✁ ✁ 4 channels of Power-Mos H-bridge drivers. Built-in DC/DC converter control circuit. Built-in reset circuit. Built-in VG booster circuit. Built-in voltage down regulator circuit.

Contextual Info: AT5801 Preliminary Product Information 4-Channel Motor driver for Portable CD Player Features Applications ˙Built-in 4 channels H-bridge drivers. ˙DC/DC converter control circuit on a chip. ˙With reset output inversion circuit. ˙Battery charging circuit on Chip.

QFP44 motor driver

Abstract: AT5801 GVC134 J-STD-020A QFP44 QFP-44 VOO134 24v to 3.2v dc dc converter
Contextual Info: AT5801 Preliminary Product Information 4-Channel Motor driver for Portable CD Player Features Applications ˙Built-in 4 channels H-bridge drivers. ˙DC/DC converter control circuit on a chip. ˙With reset output inversion circuit. ˙Battery charging circuit on Chip.

transistor B1013

Abstract: b1013 transistor circuit diagram of power supply section of lg 15 C4115S C4115-S c4115 transistor C4115SR b1013 470PF AT5802
Contextual Info: AT5802 Preliminary 4-Channel driver + Power Controller Features Description ˙4 channels of Power-Mos H-bridge drivers. ˙Built-in DC/DC converter control circuit. ˙Built-in reset circuit. ˙Built-in VG booster circuit. ˙Built-in voltage down regulator circuit.

Contextual Info: RS2596 150KHz, 3A PWM Buck DC/DC Converter The RS2596 is Monolithic IC that design for a step-down DC/DC Converter, and own the ability of driving a 3A load without additional transistor component. The output version included 3.3V, 5V, 12V and an adjustable type. It operates at a switching frequency of

Contextual Info: RS6501 150KHz, 40V, 2A PWM Buck DC/DC Converter DESCRIPTION FEATURES The RS6501 is Monolithic IC that design for a step- down DC/DC Converter, and own the ability of driving a 2A load without additional transistor component. The output version included 3.3V, 5V, 12V and an

Contextual Info: SIEMENS BUZ 311 SIPMOS Power Transistor • N channel • Enhancement mode V'OS'bS i 2f Pin 2 P in i G Type BUZ 311 Vbs 1000 V b 2.5 A ^DS on 5Q Pin 3 D S Package Ordering Code TO-218AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Drain source voltage

GaAs FET operating junction temperature

Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .

power Junction FET advantages and disadvantages

Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor

Contextual Info: WILLAS FM120-M+ MMBT2907ADW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNT Purpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: Provisional Data Sheet No. PD - 9.1716 International IO R Rectifier IRFE9130 dv/dt R A TED J ANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:M IL-PRF-19500/564] R E P E T IT IV E A V A LA N CH E A N D P-CHANNEL Product Summary -1 OOVolt, 0.30Q, HEXFET

Contextual Info: Provisional Data Sheet No. PD - 9.1722 International IOR Rectifier IRFE210 dv/dt R A TED J ANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF: M IL-PRF-19500/556] R E P E T IT IV E A VA LA N CH E A N D N -C H A N N E L 200Volt, 1.512, HEXFET Product Summary

LA8515

Abstract: LA8518NM INTERPHONE IC microphone Compander Crosspoint Switches
Contextual Info: Ordering number: EN5421 Monolithic Linear IC LA8518NM Signal Processor for Cordless Telephone Base Sets Functions Package Dimensions Speech network block c 2-wire/4-wire conversion c Line driver c Transmitting amplifier c Receiving amplifier with ATT c Power supply switching circuit

NE644

Abstract: 2SC2272 NE64400 NE64408 NE64480 NEC Microwave Semiconductors
Contextual Info: ‘N E C/ ~ • CALIFORNIA 6427414 N t L/ 3D LA LiruKiM i* D F|b 4 2 7 4 m □□□□lb3 30C 00163 3 |~ D “p MICROWAVE TRANSISTOR SERIES NE644 FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE F I G U R E 2.7 dB at 4.0 GHz T he N E 6 4 4 is the latest series of NPN silicon transistors

W528x

Abstract: 8050D W5280 transistor 8050 w528
Contextual Info: W5280 ADPCM VOICE SYNTHESIZER ROM-less PowerSpeech GENERAL DESCRIPTION The W5280 is a CMOS IC that is used solely for the purpose of demonstrating W528X series PowerSpeech products. The W5280 employs the same JUMP-GO architecture as most of Winbond's other speech

Contextual Info: irdering number: EN5421 Monolithic Linear IC LA8518NM SA iYO I Signal Processor for Cordless Telephone Base Sets Functions Package Dimensions Speech network block • 2-wire/4-wire conversion • Line driver • Transmitting amplifier • Receiving amplifier with ATT

tms 3878

Contextual Info: User's Guide SLUU514 – July 2011 bq76925EVM Evaluation Module This user's guide for the bq76925EVM evaluation module can assist designers in their evaluation of the bq76925, Analog Front End for 3- to 6-Series Lithium-Ion Cells. This guide discusses setup and operation

P1M marking code sot 223

Abstract: marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223
Contextual Info: 11 SMD Darlington Transistors SMD® Darlington Transistors Description Mechanical Data Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two seriesintegrated transistors on a single chip. High current versions

L-Band 1200-1400 MHz

Abstract: 0000F
Contextual Info: M/A-COfl P H 0 b3E D Sb4P205 MICROWAVE POWER TRANSISTOR PH1214-60 0000f l 2f i Eh3 Æ I NAP Z M K M //A A -C C OM M PHI, INC. b PH1214-60 is an internally matched high power transistor designed for long pulse or CW applications from 1200 to 1400 MHz. Internal matching both at the

Contextual Info: P D - 9.1717 International Rectifier I R IRFE9230 JANTX2N6851 U R E P E T I T I V E A V A L A N C H E A N D dv/dt R A T E D JANTXV2N6851 U HEXFET TRANSISTOR JANS2N6851 U [REF:MIL-PRF-19500/564] P -C H A N N E L Product Summary B V dss Part Number -200Volt, 0.80ft, HEXFET

Contextual Info: W5280 i.lV in bond Electronics Corp. ADPCM VOICE SYNTHESIZER ROM-less PowerSpeech GENERAL DESCRIPTION The W5280 is a CMOS 1C that is used solely tor the purpose ot demonstrating W528X series PowerSpeech products. The W5280 employs the same JUMP-GO architecture as most ot Winbond's other speech

Contextual Info: Provisional Data Sheet No. PD - 9.1715 International IS R Rectifier IRFE230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798U HEXFET TRANSISTOR JANTXV2N6798U [REF:M IL-PRF-19500/557] N -C H A N N E L 200Volt, 0.40Q, HEXFET Product Summary The leadless chip carrier LCC package represents